Method for bonding substrates
A method for bonding a first substrate with a second substrate at respective contact faces of the substrates with the following steps: holding the first substrate to a first sample holder surface of a first sample holder with a holding force F H1 and holding the second substrate to a second sample holder surface of a second sample holder with a holding force F H2 ; contacting the contact faces at a bond initiation point and heating at least the second sample holder surface to a heating temperature T H ; bonding of the first substrate with the second substrate along a bonding wave running from the bond initiation point to the side edges of the substrates, wherein the heating temperature T H is reduced at the second sample holder surface during the bonding.
1. A method for bonding a first substrate with a second substrate at respective contact faces of the substrates, the method comprising:
holding the first substrate to a first sample holder surface of a first sample holder with a holding force F H1 and holding the second substrate to a second sample holder surface of a second sample holder with a holding force F H2 ,
contacting the respective contact faces of the substrates at a bond initiation point and heating at least the second sample holder surface to a heating temperature T H , and
bonding the first substrate with the second substrate along a bonding wave running from the bond initiation point to respective side edges of the substrates,
wherein the heating temperature T H is reduced at the second sample holder surface during the bonding, and
wherein the holding force F H1 is reduced during the bonding at a time t 1 , to an extent such that the first substrate is released from the first sample holder.
2. The method according to claim 1 , wherein reduction of the heating temperature T H takes place dependent on a course of the bonding wave.
3. The method according to claim 1 , wherein a course of the bonding wave is detected at least in sections by measuring means.
4. The method according to claim 1 , wherein the holding force F H2 is reduced during the bonding at a time t 2 , to an extent such that the second substrate on the second sample holder is able to be deformed along the contact face of the second substrate.
5. The method according to claim 1 , wherein the second substrate is ventilated from the second sample holder surface at a time t 3 with an overpressure.
6. The method according to claim 1 , wherein the holding force F H2 is increased at a time t 4 after the bonding.
7. The method according to claim 2 , wherein reduction of the heating temperature T H takes place by switching off a heating means.
8. The method according to claim 5 , wherein the overpressure is between 10 mbar and 500 mbar.
9. A method for bonding a first substrate with a second substrate at respective contact faces of the substrates, the method comprising:
holding the first substrate to a first sample holder surface of a first sample holder with a holding force F H1 and holding the second substrate to a second sample holder surface of a second sample holder with a holding force F H2 ,
contacting the respective contact faces of the substrates at a bond initiation point and heating at least the second sample holder surface to a heating temperature T H , and
bonding the first substrate with the second substrate along a bonding wave running from the bond initiation point to respective side edges of the substrates,
wherein the heating temperature T H is reduced at the second sample holder surface during the bonding, and
wherein the holding force F H2 is increased at a time t 4 after the bonding.
10. A method for bonding a first substrate with a second substrate at respective contact faces of the substrates, the method comprising:
holding the first substrate to a first sample holder surface of a first sample holder with a holding force F H1 and holding the second substrate to a second sample holder surface of a second sample holder with a holding force F H2 ,
contacting the respective contact faces of the substrates at a bond initiation point and heating at least the second sample holder surface to a heating temperature T H , and
bonding the first substrate with the second substrate along a bonding wave running from the bond initiation point to respective side edges of the substrates,
wherein the heating temperature T H is reduced at the second sample holder surface during the bonding, and
wherein reduction of the heating temperature T H takes place by switching off a heating means.