Structure of integrated circuitry and a method of forming a conductive via

1. A method of forming a conductive via, comprising:

forming a structure comprising an elevationally-extending-conductive via and a conductive line electrically coupled to and crossing above the conductive via, the conductive line comprising first conductive material and the conductive via comprising second conductive material of different composition from that of the first conductive material, the conductive line and the conductive via respectively having opposing sides in a vertical cross-section;

forming first insulator material having k no greater than 4.0 laterally outward of the opposing sides of the second conductive material of the conductive via selectively relative to the first conductive material of the opposing sides of the conductive line, the first insulator material being formed to a lateral thickness of at least 40 Angstroms in the vertical cross-section; and

forming second insulator material having k greater than 4.0 laterally outward of opposing sides of the first insulator material in the vertical cross-section.

2. The method of claim 1 comprising forming the second conductive material to comprise dopant therein that is conductivity-increasing when within a semiconductor material, the conductive via being directly against a circuit node under the via, the circuit node comprising the semiconductor material.

3. The method of claim 2 wherein the second conductive material comprises the semiconductor material that is conductively doped with the dopant.

4. The method of claim 2 wherein the second conductive material comprises metal material.

5. The method of claim 1 wherein the selectively forming forms no first insulator material laterally outward of the opposing sides of the first conductive material of the conductive line.

6. The method of claim 1 comprising forming the first insulator material to a lateral thickness of no greater than 100 Angstroms.

7. The method of claim 1 comprising forming a pair of additional conductive vias laterally outward of the second insulator material in the vertical cross-section.

8. The method of claim 7 comprising forming the additional vias directly against the second insulator material in the vertical cross-section.

9. The method of claim 1 comprising forming the first insulator material to comprise silicon dioxide and the second insulator to comprise silicon nitride.

10. The method of claim 1 wherein the selectively forming comprises exposing the structure to a hydroxide to form the first insulator to comprise an oxide.

11. A method of forming a conductive via, comprising:

forming a structure comprising an elevationally-extending-conductive via comprising conductively-doped semiconductor material and a conductive line comprising metal material electrically coupled to and crossing above the conductive via, the conductive line and the conductive via respectively having opposing sides in a vertical cross-section;

exposing the structure to an ammonium-hydroxide-containing fluid to form an oxide-containing first insulator material having k no greater than 4.0 laterally outward of the opposing sides of the conductively-doped semiconductor material of the conductive via selectively relative to the metal material of the opposing sides of the conductive line, the first insulator material being formed to a lateral thickness of at least 40 Angstroms in the vertical cross-section;

forming a nitride-containing insulative material laterally outward of opposing sides of the first insulator material in the vertical cross-section;

forming an oxide-containing-insulative material laterally outward of opposing sides of the nitride-containing-insulative material in the vertical cross-section;

forming a nitride-containing second insulator material having k greater than 4.0 laterally outward of opposing sides of the oxide-containing-insulative material in the vertical cross-section;

forming insulating material laterally outward of opposing sides of the oxide-containing-insulative material in the vertical cross-section above the second insulator material; and

forming conductor material laterally outward of opposing sides of the second insulator material in the vertical cross-section.

12. The method of claim 11 comprising forming the insulating material to comprise an oxide-comprising insulator.

13. The method of claim 11 comprising forming the insulating material to comprise a nitride-comprising insulator.

14. The method of claim 11 comprising forming the insulating material to comprise a nitride-comprising insulator laterally outward of an oxide-comprising insulator.

15. A structure of integrated circuitry, comprising:

an elevationally-extending-conductive via and a conductive line electrically coupled to and crossing above the conductive via, the conductive via having opposing sides in a vertical cross-section;

first insulator material having k no greater than 4.0 laterally outward of the opposing sides of the conductive via, the first insulator material having a lateral thickness of at least 40 Angstroms along the opposing sides of the conductive via in the vertical cross-section;

second insulator material having k greater than 4.0 laterally outward of opposing sides of the first insulator material in the vertical cross-section; and

conductor material laterally outward of opposing sides of the second insulator material in the vertical cross-section, the conductor material on the opposing sides of the second insulator material having a respective bottom, the first insulator material having lateral thickness of at least 40 Angstroms and k no greater than 4.0 extending lower than the bottoms of the conductor material on the opposing sides of the second insulator material.

16. The structure of claim 15 wherein the first insulator material extends along at least a majority of elevational-length of the opposing sides of the conductive via downwardly from aside a top of the conductive via.

17. The structure of claim 16 wherein the first insulator material extends along less-than-all of the elevational-length of the opposing sides of the conductive via.

18. The structure of claim 15 having parasitic capacitance between the conductor material and the conductive via of less than 30 attofarads at a voltage delta between the conductor material and the conductive via of no greater than 1.1 volts.

19. The structure of claim 15 wherein the first insulator material is directly against the conductive via.

20. A structure of integrated circuitry, comprising:

an elevationally-extending-conductive via and a conductive line electrically coupled to and crossing above the conductive via, the conductive via having opposing sides in a vertical cross-section;

first insulator material having k no greater than 4.0 laterally outward of the opposing sides of the conductive via along at least a majority of elevational-length of the opposing sides of the conductive via downwardly from aside a top of the conductive via, the first insulator material having a lateral thickness of at least 40 Angstroms along the opposing sides of the conductive via;

second insulator material having k greater than 4.0 laterally outward of opposing sides of the first insulator material in the vertical cross-section; and

conductor material laterally outward of opposing sides of the second insulator material in the vertical cross-section.