Methods of forming integrated circuit structure using extreme ultraviolet photolithography technique and related integrated circuit structure

1. A method of forming an integrated circuit structure, the method comprising:

providing a set of fins over a semiconductor substrate, the set of fins including a plurality of working fins and a plurality of dummy fins, the plurality of dummy fins including a first subset of dummy fins within a pre-defined distance from any of the plurality of working fins, and a second subset of dummy fins beyond the pre-defined distance from any of the plurality of working fins;

removing the first subset of dummy fins by an extreme ultraviolet (EUV) lithography technique; and

removing at least a portion of the second subset of dummy fins.

2. The method of claim 1 , wherein the EUV lithography technique employs a dark field reticle with a positive tone development (PTD) photoresist, the dark field reticle determines the pre-defined distance.

3. The method of claim 1 , wherein the at least a portion of the second subset of dummy fins is removed by the EUV lithography technique at the same time that removes the first subset of dummy fins.

4. The method of claim 1 , wherein removing the at least a portion of the second subset of dummy fins comprises removing the entire second subset of dummy fins by a lithography technique employing a block mask.

5. The method of claim 1 , wherein the plurality of working fins include working nitride fins, and further comprising:

using the working nitride fins to form active semiconductor fins.

6. The method of claim 2 , wherein the pre-defined distance is less than approximately 80 nanometers (nm).

7. The method of claim 2 , wherein the EUV lithography technique includes:

patterning the PTD photoresist to expose portions of a mask under the PTD photoresist; and

forming an opening in the exposed portions of the mask to expose the first subset of dummy fins, wherein the plurality of working fins and the second subset of dummy fins remain covered by the mask.

8. The method of claim 4 , wherein the lithography technique employing the block mask includes:

forming the block mask over the second subset of dummy fins and the plurality of working fins;

patterning a photoresist to expose portions of the block mask thereunder which are disposed over the second subset of dummy fins; and

forming an opening in the exposed portions of the block mask to expose the second subset of dummy fins, wherein the working fins remain covered by the block mask.

9. The method of claim 8 , further comprising:

after the forming of the opening in the exposed portions of the block mask, removing the photoresist from over the block mask and removing of the block mask.

10. A method of forming an integrated circuit structure, the method comprising:

providing a set of nitride fins over a semiconductor substrate, the set of nitride fins including a plurality of working nitride fins and a plurality of dummy nitride fins;

performing an extreme ultraviolet (EUV) lithography technique to remove a first subset of the plurality of dummy nitride fins from over the semiconductor substrate such that a second subset of the plurality of dummy nitride fins and the plurality of working nitride fins remain, wherein the first subset of the plurality of dummy nitride fins is within a pre-defined distance from any of the plurality of working nitride fins and the second subset of the plurality of dummy nitride fins is beyond the pre-defined distance from any of the plurality of working nitride fins; and

forming a set of dummy semiconductor fins from the second subset of the plurality of dummy nitride fins and forming a set of active semiconductor fins from the plurality of working nitride fins.

11. The method of claim 10 , wherein the pre-defined distance is determined by the EUV lithography technique.

12. The method of claim 10 , wherein the EUV lithography technique employs positive tone development (PTD) photoresist and a dark field reticle, the dark field reticle determining the pre-defined distance.

13. The method of claim 10 , further comprising:

performing a lithography technique employing a block mask to remove the set of dummy semiconductor fins such that the set of active semiconductor fins remains on the semiconductor substrate.

14. The method of claim 10 , wherein the performing of the EUV lithography technique further includes removing a portion of certain dummy nitride fins in the second subset of the plurality of dummy nitride fins to create disconnects within the second subset of the plurality of dummy nitride fins for forming a functional structure for the subsequently formed active semiconductor fins.

15. The method of claim 12 , wherein the pre-defined distance is less than approximately 80 nanometers (nm).

16. The method of claim 13 , wherein the performing of the lithography technique employing the block mask includes removing the set of dummy semiconductor fins such that a first height of the semiconductor substrate at a first location where the set of dummy semiconductor fins are removed is distinct from a second height of the semiconductor substrate at a second location between adjacent fins of the set of active semiconductor fins.

17. The method of claim 13 , wherein the functional structure includes a gate, and further comprising:

forming the gate perpendicular to the set of active semiconductor fins, wherein the gate does not contact the set of dummy semiconductor fins.

18. An integrated circuit structure comprising:

a substrate including a first location having a first height and a second, distinct location having a second height; and

a set of semiconductor fins extending directly from the substrate,

wherein the first location of the substrate is devoid of the set of semiconductor fins and the second location of the substrate is disposed between adjacent semiconductor fins of the set of semiconductor fins.

19. The integrated circuit structure of claim 18 , wherein the first height is less than the second height.

20. The integrated circuit structure of claim 18 , wherein the first height is greater than the second height.