Light emitting device having vertical structure and package thereof

1. A light emitting device package comprising:

a sub-mount having a first surface, a second surface and a bottom surface;

a first layer on the first surface of the sub-mount;

a second layer on the second surface of the sub-mount;

at least one third layer on the bottom surface of the sub-mount;

a light emitting device on the first layer, the light emitting device comprising a supporting layer including an anti-diffusion layer, a first electrode on the supporting layer, a semiconductor light emitting structure electrically connected to the first electrode, and a second electrode electrically connected to the semiconductor light emitting structure, wherein the first electrode is electrically connected to the first layer and the second electrode is electrically connected to the second layer, wherein the semiconductor light emitting structure comprises a light extraction structure;

an ESD property improving diode on the second surface such that the ESD property improving diode is electrically connected to the second layer, wherein the ESD property improving diode is arranged a distance apart from the light emitting device, and

a lens on the sub-mount, wherein the lens is disposed on the light emitting device,

wherein the first layer and the second layer include metal,

wherein a height of the first surface is different from a height of the second surface,

wherein a thickness of the light emitting device is thicker than a thickness of the ESD property improving diode,

wherein at least one of the first layer and the second layer directly contacts the sub-mount,

wherein the sub-mount has a cavity, the cavity having a bottom portion and an inclined portion,

wherein the first layer is disposed on the bottom portion,

wherein the at least one third layer is vertically overlapped with the first surface and the second surface and an upper surface of the at least one third layer is flush with the bottom surface, and

wherein the sub-mount comprises ceramic material.

2. The light emitting device package of claim 1 , further comprising a reflection plate disposed on a plurality of portions of the first layer and the second layer.

3. The light emitting device package of claim 1 , wherein the semiconductor light emitting structure comprises a first conductive type semiconductor layer, a second conductive type semiconductor, and an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer.

4. The light emitting device package of claim 3 , wherein a horizontal cross-sectional area adjacent to an upper surface of the semiconductor light emitting structure is different from a horizontal cross-sectional area adjacent to a lower surface of the semiconductor light emitting structure.

5. The light emitting device package of claim 1 , wherein the first electrode is disposed between the first conductive type semiconductor layer and the supporting layer, and the second electrode is disposed over the second conductive type semiconductor layer.

6. The light emitting device package according to claim 1 , wherein a height of the first surface is lower than a height of the second surface.

7. The light emitting device package according to claim 1 , wherein the supporting layer comprises a metal.

8. The light emitting device package according to claim 1 , further comprising an adhesion layer between the semiconductor light emitting structure and the supporting layer.

9. The light emitting device package according to claim 8 , wherein the adhesion layer has a multilayer structure.

10. The light emitting device package according to claim 1 , wherein the light extraction structure comprises at least one of an irregularity pattern, a photonic crystal, and a plurality of nano particles.

11. The light emitting device package according to claim 1 , wherein the light extraction structure is an integral part of the semiconductor light emitting structure.

12. The light emitting device package according to claim 1 , wherein the ESD property improving diode is a zener diode.

13. The light emitting device package according to claim 1 , further comprising a passivation layer arranged on the semiconductor light emitting structure.

14. The light emitting device package according to claim 1 , wherein the first electrode comprises at least one of two metals and a multilayer structure of at least two metal layers alternately arranged.

15. The light emitting device package according to claim 1 , wherein the sub-mount includes AlN.

16. A light emitting device package comprising:

a sub-mount having a first surface, a cavity and a bottom surface, the cavity has a bottom portion and an inclined portion;

a first layer on the bottom portion of the cavity;

a second layer on the first surface;

at least one third layer on the bottom surface of the sub-mount;

a light emitting device on the first surface, the light emitting device comprising a supporting layer including an anti-diffusion layer, a first electrode on the supporting layer, a semiconductor light emitting structure electrically connected to the first electrode, and a second electrode electrically connected to the semiconductor light emitting structure, wherein the first electrode is electrically connected to the first layer and the second electrode is electrically connected to the second layer, wherein the semiconductor light emitting structure comprises a light extraction structure;

a zener diode on the first surface such that the zener diode is electrically connected to the second layer, wherein the zener diode is a distance apart from the light emitting device, and

a lens on the sub-mount, wherein the lens is disposed on the light emitting device and vertically overlapped with the zener diode,

wherein the first layer and the second layer include metal,

wherein a height of the first surface is higher than a height of the bottom portion,

wherein a thickness of the light emitting device is thicker than a thickness of the zener diode,

wherein at least one of the first layer and the second layer directly contacts the sub-mount,

wherein the supporting layer includes at least one of CU, Ni, Au and an alloy thereof,

wherein the at least one third layer is vertically overlapped with the first surface and the bottom portion, and

wherein the sub-mount is one of a planar sub-mount, a 3D sub-mount, and a 3D through hole interconnection (THI) sub-mount.

17. The light emitting device package according to claim 16 , wherein the zener diode is disposed at a corner region of the bottom surface of the sub-mount.

18. The light emitting device package according to claim 16 , further comprising a reflection plate disposed on a plurality of portions of the first layer and the second layer.

19. A light emitting device package comprising:

a sub-mount having a first surface, a cavity and a bottom surface, the cavity has a bottom portion and an inclined portion;

a first layer on the bottom portion of the cavity;

a second layer on the first surface;

a reflection plate disposed on a plurality of portions of the first layer and the second layer;

a light emitting device on the first surface, the light emitting device comprising a supporting layer including an anti-diffusion layer, a first electrode on the supporting layer, a semiconductor light emitting structure electrically connected to the first electrode, and a second electrode electrically connected to the semiconductor light emitting structure, wherein the first electrode is electrically connected to the first layer and the second electrode is electrically connected to the second layer, wherein the semiconductor light emitting structure comprises a light extraction structure;

a zener diode on the first surface such that the zener diode is electrically connected to the second layer, wherein the zener diode is a distance apart from the light emitting device; and

a lens on the sub-mount, wherein the lens is disposed on the light emitting device and vertically overlapped with the zener diode,

wherein the first layer and the second layer include metal,

wherein a height of the first surface is higher than a height of the bottom portion,

wherein a thickness of the light emitting device is thicker than a thickness of the zener diode,

wherein at least one of the first layer and the second layer directly contacts the sub-mount,

wherein the supporting layer includes at least one of CU, Ni, Au and an alloy thereof, and

wherein the sub-mount is one of a planar sub-mount, a 3D sub-mount, and a 3D through hole interconnection (THI) sub-mount.

20. The light emitting device package according to claim 19 , wherein at least one of the first layer or the second layer is disposed on the bottom surface of the sub-mount.