IP Library Granted Patent US 10,950,568
Granted Patent B2
US 10,950,568 · App. 15/603,327 · Granted Mar 16, 2021

Semiconductor device assembly with surface-mount die support structures

Inventors: Brandon P. Wirz (Boise, ID); Benjamin L. McClain (Boise, ID)
Assignee: Micron Technology, Inc.
H01L24/14H01L24/02H01L24/04H01L24/06H01L24/13H01L24/16H01L24/17H01L25/0657H01L25/50H01L25/16H01L25/18H01L2224/02372H01L2224/0401H01L2224/05022H01L2224/05073H01L2224/05147H01L2224/05561H01L2224/05564H01L2224/05568H01L2224/05573H01L2224/05644H01L2224/05655H01L2224/0603H01L2224/06517H01L2224/13007H01L2224/13016H01L2224/13023H01L2224/13082H01L2224/1403H01L2224/14051H01L2224/14517H01L2224/16013H01L2224/16059H01L2224/16148H01L2224/16238H01L2224/17051H01L2224/17517H01L2224/94H01L2224/97H01L2225/06513H01L2225/06541H01L2225/06565H01L2225/06593H01L2924/1431H01L2924/1434H01L2924/19041H01L2924/19042H01L2924/19043H01L2924/19103H01L2924/19104H01L2924/3511
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Quick Facts
Patent No.
US 10,950,568
App. No.
15/603,327
Filed
May 23, 2017
Granted
Mar 16, 2021
Kind
B2
Art Unit
2819
USPC
257/737
Abstract

A semiconductor device assembly is provided. The assembly includes a first package element and a second package element disposed over the first package element. The assembly further includes a plurality of die support structures between the first and second package elements, wherein each of the plurality of die support structures has a first height, a lower portion surface-mounted to the first package element and an upper portion in contact with the second package element. The assembly further includes a plurality of interconnects between the first and second package elements, wherein each of the plurality of interconnects includes a conductive pillar having a second height, a conductive pad, and a bond material with a solder joint thickness between the conductive pillar and the conductive pad. The first height is about equal to a sum of the solder joint thickness and the second height.

Claims (12)

1. A semiconductor device assembly, comprising:

a first package element;

a second package element disposed over the first package element, the second package element including a plurality of conductive features and a passivation material configured to provide electrical isolation between the conductive features;

a plurality of die support structures between the first and second package elements, wherein each of the plurality of die support structures is a monolithic structure with a first height, a lower surface mounted to the first package element and an upper surface in direct contact with the passivation material of the second package element, and is electrically isolated from other circuit elements of the semiconductor device assembly; and

a plurality of interconnects between the first and second package elements, wherein each of the plurality of interconnects includes a first conductive element on the first package element, a second conductive element on one of the plurality of conductive features of the second package element, and a bond material between the first and second conductive elements,

wherein each of the plurality of die support structures has a greater width than each of the plurality of interconnects, and

wherein at least one of the plurality of die support structures includes a discrete capacitor electrically connected to other circuit elements in the first package element.

2. The semiconductor device assembly of claim 1 , wherein the plurality of die support structures include die support structures disposed about a periphery of the semiconductor device assembly.

3. The semiconductor device assembly of claim 1 , wherein the plurality of die support structures include die support structures disposed in a medial region of the semiconductor device assembly.

4. The semiconductor device assembly of claim 1 , wherein each of the plurality of die support structures is surface-mounted to one or more mounting pads on the first package element.

5. The semiconductor device assembly of claim 1 , wherein the first package element comprises a logic die, and wherein the second package element comprises a memory die.

6. The semiconductor device assembly of claim 1 , wherein the first package element comprises a support substrate, and wherein the second package element comprises a logic die.

Assignments (7)
RELEASE OF SECURITY INTEREST Recorded Nov 12, 2019
From: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
Reel/Frame 051028/0001 →
RELEASE OF SECURITY INTEREST Recorded Oct 10, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 050700/0535 →
RELEASE OF SECURITY INTEREST Recorded Jul 20, 2018
From: U.S. BANK NATIONAL ASSOCIATION, AS AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 046597/0393 →
SECURITY INTEREST Recorded Jul 13, 2018
From: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 047540/0001 →
SUPPLEMENT NO. 5 TO PATENT SECURITY AGREEMENT Recorded Aug 8, 2017
From: MICRON TECHNOLOGY, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 043482/0776 →
SUPPLEMENT NO. 5 TO PATENT SECURITY AGREEMENT Recorded Aug 8, 2017
From: MICRON TECHNOLOGY, INC.
To: U.S. BANK NATIONAL ASSOCIATION
Reel/Frame 043483/0686 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 23, 2017
From: WIRZ, BRANDON P.; MCCLAIN, BENJAMIN L.
To: MICRON TECHNOLOGY, INC.
Reel/Frame 042484/0116 →
Continuity (1)
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