Strained channel region transistors employing source and drain stressors and systems including the same
Embodiments of the present invention provide transistor structures having strained channel regions. Strain is created through lattice mismatches in the source and drain regions relative to the channel region of the transistor. In embodiments of the invention, the transistor channel regions are comprised of germanium, silicon, a combination of germanium and silicon, or a combination of germanium, silicon, and tin and the source and drain regions are comprised of a doped III-V compound semiconductor material. Embodiments of the invention are useful in a variety of transistor structures, such as, for example, trigate, bigate, and single gate transistors and transistors having a channel region comprised of nanowires or nanoribbons.
1. A device, comprising:
a source region and a drain region, wherein the source region includes a III-V compound semiconductor material, and the drain region includes a III-V compound semiconductor material;
a channel region, wherein a first end of the channel region contacts the source region and a second end of the channel region contacts the drain region, and wherein the channel region includes silicon, germanium, or tin;
a gate dielectric on the channel region; and
a gate electrode on the gate dielectric;
wherein the channel region includes a portion of a fin or the channel region includes one or more nanowires or nanoribbons.
2. The device of claim 1 , wherein the source region or the drain region includes a material, and the material includes germanium, carbon, silicon, magnesium, beryllium, manganese, or zinc.
3. The device of claim 2 , wherein a concentration of the material is between 5e19 and 5e21 atoms/cm 3 .
4. The device of claim 1 , further comprising:
a first isolation trench; and
a second isolation trench;
wherein the channel region is at least partially between the first isolation trench and the second isolation trench.
5. The device of claim 1 , wherein the source region is lattice-mismatched to the channel region.
6. The device of claim 5 , wherein the lattice mismatch between the source region and the channel region is between 1% and 2%.
7. The device of claim 5 , wherein the drain region is lattice-mismatched to the channel region.
8. The device of claim 1 , wherein the source region and the drain region impart tensile strain on the channel region.
9. The device of claim 1 , wherein the source region and the drain region impart compressive strain on the channel region.
10. The device of claim 1 , wherein the source region includes a III-V ternary alloy or a III-V quaternary alloy.
11. A computing device, comprising:
a die including a plurality of transistors, wherein individual ones of the transistors include:
a source region and a drain region, wherein the source region includes a III-V compound semiconductor material, and the drain region includes a III/V compound semiconductor material,
a channel region, wherein a first end of the channel region contacts the source region and a second end of the channel region contacts the drain region,
a gate dielectric on the channel region, and
a gate electrode on the gate dielectric,
wherein the source region and the drain region impart tensile strain or compressive strain on the channel region, and the channel region includes a portion of a fin or the channel region includes one or more nanowires or nanoribbons.
12. The computing device of claim 11 , wherein the die includes a silicon-on-insulator substrate or a germanium-on-insulator substrate.
13. The computing device of claim 11 , wherein the channel region is undoped.
14. The computing device of claim 11 , further comprising:
insulating spacers that abut the gate electrode.
15. The computing device of claim 11 , wherein the gate dielectric is on top and side surfaces of the channel region.
16. A device, comprising:
a source region and a drain region, wherein the source region includes a III-V compound semiconductor material, and the drain region includes a III-V compound semiconductor material;
a channel region, wherein a first end of the channel region contacts the source region and a second end of the channel region contacts the drain region;
a gate dielectric on the channel region;
a gate electrode on the gate dielectric;
a first isolation trench; and
a second isolation trench;
wherein the channel region is at least partially between the first isolation trench and the second isolation trench, and the channel region includes a portion of a fin or the channel region includes one or more nanowires or nanoribbons.
17. The device of claim 16 , wherein the source region is lattice-mismatched to the channel region or the drain region is lattice-mismatched to the channel region.
18. A device, comprising:
a source region and a drain region, wherein the source region includes a III-V compound semiconductor material, the drain region includes a III-V compound semiconductor material, the source region or the drain region includes a material, the material includes germanium, carbon, silicon, magnesium, beryllium, manganese, or zinc, and a concentration of the material is between 5e19 and 5e21 atoms/cm 3 ;
a channel region, wherein a first end of the channel region contacts the source region and a second end of the channel region contacts the drain region;
a gate dielectric on the channel region; and
a gate electrode on the gate dielectric.
19. The device of claim 18 , wherein the channel region is undoped.