Light emitting device
A light emitting device is provided which can prevent a change in gate voltage due to leakage or other causes and at the same time can prevent the aperture ratio from lowering. A capacitor storage is formed from a connection wiring line, an insulating film, and a capacitance wiring line. The connection wiring line is formed over a gate electrode and an active layer of a TFT of a pixel, and is connected to the active layer. The insulating film is formed on the connection wiring line. The capacitance wiring line is formed on the insulating film. This structure enables the capacitor storage to overlap the TFT, thereby increasing the capacity of the capacitor storage while keeping the aperture ratio from lowering. Accordingly, a change in gate voltage due to leakage or other causes can be avoided to prevent a change in luminance of an OLED and flickering of screen in analog driving.
1. A light-emitting device including a pixel portion, the pixel portion comprising:
a first transistor and a second transistor over a substrate, each including a semiconductor region, a gate insulating film over the semiconductor region, and a gate electrode over the gate insulating film;
an organic insulating film over the first transistor and the second transistor;
a pixel electrode containing indium tin oxide over and in contact with the organic insulating film; and
a wiring containing indium tin oxide over and in contact with the organic insulating film,
wherein the pixel electrode is electrically connected to the semiconductor region of the second transistor, and
wherein the wiring overlaps the semiconductor region of the first transistor.
2. The light-emitting device according to claim 1 , wherein the gate electrode of the second transistor is electrically connected to the semiconductor region of the first transistor.
3. The light-emitting device according to claim 1 , wherein the wiring is a capacitance wiring.
4. A display module comprising a flexible printed circuit connected to the light-emitting device and the light-emitting device according to claim 1 .
5. The display module according to claim 4 , wherein the display module is incorporated in one selected from the group consisting of a digital still camera, a personal computer, a mobile computer, a portable image reproducing device, a goggle type display, a video camera and a cellular phone.
6. A light-emitting device including a pixel portion, the pixel portion comprising:
a first transistor and a second transistor over a plastic substrate, each including a semiconductor region, a gate insulating film over the semiconductor region, and a gate electrode over the gate insulating film;
an organic insulating film over the first transistor and the second transistor;
a pixel electrode containing indium tin oxide over and in contact with the organic insulating film; and
a wiring containing indium tin oxide over and in contact with the organic insulating film,
wherein the pixel electrode is electrically connected to the semiconductor region of the second transistor, and
wherein the wiring overlaps the semiconductor region of the first transistor.
7. The light-emitting device according to claim 6 , wherein the gate electrode of the second transistor is electrically connected to the semiconductor region of the first transistor.
8. The light-emitting device according to claim 6 , wherein the wiring is a capacitance wiring.
9. A display module comprising a flexible printed circuit connected to the light-emitting device and the light-emitting device according to claim 6 .
10. The display module according to claim 9 , wherein the display module is incorporated in one selected from the group consisting of a digital still camera, a personal computer, a mobile computer, a portable image reproducing device, a goggle type display, a video camera and a cellular phone.
11. A light-emitting device including a pixel portion, the pixel portion comprising:
a first transistor, a second transistor, and a source wiring, wherein the source wiring is electrically connected to a gate of the second transistor through a source and a drain of the first transistor;
a first organic insulating film over the first transistor, the second transistor, and the source wiring;
a wiring over the first organic insulating film;
a light-emitting element over the first organic insulating film and electrically connected to a source or a drain of the second transistor, wherein the light-emitting element comprises:
a pixel electrode;
an organic light-emitting layer over the pixel electrode; and
an opposite electrode over the organic light-emitting layer; and
a second organic insulating film over the wiring and comprising an opening overlapping with the pixel electrode, wherein the organic light-emitting layer is provided in the opening,
wherein:
the wiring and the pixel electrode are each provided over and in contact with the first organic insulating film and do not overlap with each other; and
the wiring is overlapped with the first transistor and crossed with the source wiring with the first organic insulating film interposed between the wiring and the source wiring.
12. The light-emitting device according to claim 11 , wherein the organic light-emitting layer overlaps with the wiring with the second organic insulating film interposed therebetween.
13. The light-emitting device according to claim 11 , wherein the wiring and the pixel electrode each comprise indium and tin.
14. The light-emitting device according to claim 11 , further comprising a protective electrode over and in contact with the opposite electrode.
15. The light-emitting device according to claim 11 , wherein the wiring is a capacitance wiring.