Updating read voltages triggered by the rate of temperature change
A device includes a memory and a controller coupled to the memory. The controller is configured to associate a first value of a memory access parameter with a first group indicator. The controller is configured to perform an update operation to determine a second value of the memory access parameter based on first data read from the memory and to generate a first updated value of the memory access parameter. The first updated parameter is associated with the first group indicator and is based on the first value and the second value.
1. A device comprising:
a memory; and
a controller coupled to the memory, the controller configured to:
associate a first value of a memory access parameter with a first group indicator,
perform a first update operation to:
determine a second value of the memory access parameter based on first data read from the memory, wherein the first data is associated with the first group indicator, and
generate a first updated value of the memory access parameter based on the first value and the second value, wherein the first updated value is associated with the first group indicator, and
perform a second update operation to:
determine a third value of the memory access parameter based on second data read from the memory, wherein the second data is associated with the first group indicator, and
generate a second updated value of the memory access parameter based on the first updated value and the third value, wherein the second updated value is associated with the first group indicator,
wherein the first data and the second data are located on at least one selected from a group consisting of different blocks of the memory, different planes of the memory, and different dies of the memory.
2. The device of claim 1 , wherein the controller is configured to perform the first update operation in response to a trigger event, the trigger event including at least one of expiration of a time period or a temperature change associated with the memory exceeding a threshold temperature change.
3. The device of claim 1 , wherein the controller is further configured to adjust a frequency of performing update operations based on a rate of temperature change of the memory.
4. The device of claim 3 , wherein the controller is further configured to adjust the frequency further based on a temperature value.
5. The device of claim 3 , wherein the controller is further configured to adjust the frequency further based on an error metric associated with data that is read from the memory and that is associated with the first group indicator.
6. The device of claim 1 , wherein the memory access parameter includes a read voltage.
7. The device of claim 1 , wherein the controller is further configured to generate the first updated value based on at least one of:
applying an alpha filter to the first value and to the second value; or
applying a moving average including the first value and the second value.
8. The device of claim 7 , wherein the controller is further configured to apply unequal weighting to the first value and to the second value to generate the first updated value.
9. The device of claim 1 , wherein the controller is further configured to discard the first updated value in response to a temperature change exceeding a threshold.
10. A method comprising:
associating a first value of a memory access parameter with a first group indicator;
performing a first update operation that includes:
determining a second value of the memory access parameter based on first data read from a memory, wherein the first data is associated with the first group indicator, and
generating a first updated value of the memory access parameter based on the first value and the second value, wherein the first updated value is associated with the first group indicator; and
performing a second update operation that includes:
determining a third value of the memory access parameter based on second data read from the memory, wherein the second data is associated with the first group indicator, and
generating a second updated value of the memory access parameter based on the first updated value and the third value, wherein the second updated value is associated with the first group indicator,
wherein the first data and the second data are located on at least one selected from a group consisting of different blocks of the memory, different planes of the memory, and different dies of the memory.
11. The method of claim 10 , further comprising storing an indication of memory locations of data that is used generate the first value and the first updated value.
12. The method of claim 10 , wherein the first update operation is performed in response to a trigger event, the trigger event including at least one of expiration of a time period or a temperature change associated with the memory exceeding a threshold temperature change.
13. The device of claim 10 , wherein the memory access parameter includes a read voltage.
14. The method of claim 10 , wherein the first updated value is generated by applying an alpha filter to the first value and to the second value or by applying a moving average including the first value and the second value.
15. The method of claim 10 , further comprising discarding the first updated value in response to a temperature change exceeding a threshold.