Apparatus comprising antifuse cells

1. An apparatus comprising an antifuse cell, the antifuse cell comprising:

first and second nodes;

an antifuse element and a transistor, the antifuse element and the transistor being coupled in series between the first and second nodes;

the antifuse element comprising an antifuse gate;

the transistor comprising a transistor gate, the transistor gate comprising a substantially-annular structure substantially surrounding the antifuse gate;

the transistor comprising a first source/drain diffusion region inside the substantially-annular structure of the transistor gate and a second source/drain diffusion region outside the substantially-annular structure of the transistor gate; and

at least a part of the antifuse gate overlapping at least a part of the first source/drain diffusion region with an intervention of gate insulator material.

2. The apparatus of claim 1 wherein all of the antifuse gate overlaps at least a part of the first source/drain diffusion region.

3. The apparatus of claim 1 further comprising:

a first control line coupled to the transistor gate;

a second control line coupled to the second node; and

a third control line coupled to the first node, the first node being coupled to the antifuse gate.

4. An apparatus comprising an antifuse cell, the antifuse cell comprising:

an antifuse element comprising a first antifuse electrode and a second antifuse electrode;

a pass transistor comprising a first source/drain region, a second source/drain region, a channel region between the first source/drain region and the second source/drain region, and a pass gate operably proximate the channel region; and

the pass gate being on both of opposite lateral sides of the first antifuse electrode in both straight-line vertical cross-section and straight-line horizontal cross-section, the first antifuse electrode and the second antifuse electrode being laterally spaced from the pass gate.