Vertical semiconductor device having a stacked die block
View Patent ↗A semiconductor device vertically mounted on a medium such as a printed circuit board, and a method of its manufacture, are disclosed. The semiconductor device includes a stack of semiconductor die having contact pads which extend to an active edge of the die aligned on one side of the stack. The active edges of the die are affixed to the PCB and the contact pads at the active edge are electrically coupled to the PCB. This configuration provides an optimal, high density arrangement of semiconductor die in the device, where a large number of semiconductor die can be mounted and electrically coupled directly to the PCT, without a substrate, without staggering the semiconductor die, and without using wire bonds.
1. A semiconductor device for being mounted to a medium, comprising:
a plurality of semiconductor die, each semiconductor die comprising:
a first major surface,
a second major surface comprising a die attach film (DAF) applied to the plurality of semiconductor die during fabrication of the plurality of semiconductor die on one or more wafers:
an active edge at a nonzero angle to the first and second major surfaces, and
electrical contacts formed in the first major surface, adjacent the active edge of the semiconductor die,
the plurality of semiconductor die configured to surface mount to the medium with the active edge of each semiconductor die facing the medium.
2. The semiconductor device of claim 1 , wherein the plurality of semiconductor die are stacked in a block, with each die separated from each other by the DAF.
3. The semiconductor device of claim 2 , wherein the DAF of a first semiconductor die in the block lies against the major surface of a second semiconductor die in the block, the DAF of the first semiconductor die not contacting the electrical contacts of the second semiconductor die.
4. The semiconductor device of claim 2 , wherein the DAF of a first semiconductor die in the block lies against the major surface of a second semiconductor die in the block, the DAF of the first semiconductor die formed in a way so that the first semiconductor die is devoid of DAF near the active edge of the first semiconductor die so that a space is defined between the first and second semiconductor die in an area of the electrical contacts.
5. The semiconductor device of claim 1 , wherein the electrical contacts comprise die bond pads in the major surfaces of the plurality of semiconductor die.
6. The semiconductor device of claim 1 , wherein the electrical contacts comprise die bond pads in the major surfaces of the plurality of semiconductor die and electrical traces formed on the die bond pads.
7. A semiconductor device, comprising:
a plurality of semiconductor die, each semiconductor die comprising:
a first major surface having a length and a width,
a second major surface having a length and a width corresponding to the length and the width of the first major surface,
an active edge extending between the first and second major surfaces,
electrical contacts formed in the first major surface, adjacent the active edge of the semiconductor die and extending across the first major surface in the length direction, and
die attach film (DAF) formed on the second major surface during die fabrication for affixing the second major surface to another surface;
the plurality of semiconductor die stacked in a block, separated by the DAF on each semiconductor die, and the block configured to be mounted directly against a medium.
8. The semiconductor device of claim 7 , wherein the electrical contacts comprise die bond pads in the major surfaces of the plurality of semiconductor die.
9. The semiconductor device of claim 7 , wherein the electrical contacts comprise die bond pads in the major surfaces of the plurality of semiconductor die and electrical traces formed on the die bond pads.
10. An electronic component, comprising:
a plurality of semiconductor die, each semiconductor die comprising:
a first major surface,
a second major surface comprising a die attach film (DAF) applied during die fabrication,
an active edge extending between the first and second major surfaces, and
electrical contacts formed in the first major surface, adjacent the active edge of the semiconductor die; and
a medium comprising a plurality of conductive contacts extending above a surface of the medium, the plurality of semiconductor die surface mounted directly to a surface of the medium with the active edges of the plurality of semiconductor die facing the medium, and the plurality of electrical contacts electrically coupled to the plurality of conductive contacts.
11. The electronic component of claim 10 , wherein the plurality of semiconductor die are stacked in a block, with each die separated from each other by the DAF.
12. The electronic component of claim 11 , wherein the DAF on the second major surface of a first semiconductor die in the block lies against the first major surface of a second semiconductor die in the block, the DAF of the first semiconductor die formed in a way so that the first semiconductor die is devoid of DAF near the active edge of the first semiconductor die so that a space is defined between the first and second semiconductor die in an area of the electrical contacts.
13. The electronic component of claim 10 , wherein the electrical contacts comprise die bond pads in the first major surfaces of the plurality of semiconductor die.
14. The electronic component of claim 10 , wherein the electrical contacts comprise die bond pads in the first major surfaces of the plurality of semiconductor die and electrical traces formed on the die bond pads.
15. The electronic component of claim 10 , wherein the conductive contacts comprise solder balls.