Methods, articles, and devices for pulse adjustment to program a memory cell
Embodiments disclosed herein may relate to adjusting an aspect of a programming pulse for one or more memory cells, such as based at least in part on one or more detected programmed resistance values for the one or more memory cells.
1. A method of operating a memory device, comprising:
determining a set of pulse parameters for a programming electrical pulse, the set of pulse parameters including a fall time of the programming electrical pulse; and
applying, to a memory cell of a memory array, the programming electrical pulse based at least in part on the fall time of the programming electrical pulse, wherein the programming electrical pulse comprises a voltage pulse.
2. A method of operating a memory device, comprising:
determining a ratio of resistance of a first state and a second state; and
determining a programmed state of a memory cell of a memory array based at least in part on determining the ratio of resistance;
determining a set of pulse parameters for a programming electrical pulse, the set of pulse parameters including a fall time of the programming electrical pulse; and
applying, to the memory cell of the memory array, the programming electrical pulse based at least in part on the set of pulse parameters.
3. The method of claim 2 , wherein the ratio of resistance comprises a ratio of a resistance in a reset state to a resistance in a set state.
4. The method of claim 1 , further comprising:
adjusting the fall time of the programming electrical pulse, wherein adjusting the fall time changes a resistivity of the memory cell.
5. The method of claim 1 , further comprising:
programming a reset state of the memory cell based at least in part on applying the programming electrical pulse.
6. The method of claim 1 , wherein the memory cell comprises a phase change memory cell.
7. A method of operating a memory device, comprising:
programming a reset state of a memory cell of a memory array, wherein programming the reset state of the memory cell includes applying a reset programming pulse to the memory cell of the memory array and reducing a fall time for the reset programming pulse based at least in part on applying the reset programming pulse to the memory cell;
performing a read operation for the memory cell based at least in part on programming the reset state to the memory cell; and
determining a programmed resistance value for the memory cell based at least in part on performing the read operation.
8. A method of operating a memory device, comprising:
programming a reset state of a memory cell of a memory array;
performing a read operation for the memory cell based at least in part on programming the reset state to the memory cell;
determining a programmed resistance value for the memory cell based at least in part on performing the read operation;
determining a resistivity characteristic for the memory cell; and
reducing a fall time based at least in part on determining the resistivity characteristic.
9. A method of operating a memory device, comprising:
programming a reset state of a memory cell of a memory array;
performing a read operation for the memory cell based at least in part on programming the reset state to the memory cell;
determining a programmed resistance value for the memory cell based at least in part on performing the read operation, wherein determining the programmed resistance value further comprises initiating a pulse adjustment operation based at least in part on at least one of a pre-determined memory access cycle or an error detection operation.
10. An electronic memory apparatus, comprising:
a memory array including a memory cell; and
a control unit in electronic communication with the memory array, wherein the control unit is operable to:
determine a set of pulse parameters for a voltage pulse, the set of pulse parameters including a fall time of the voltage pulse; and
apply, to the memory cell of the memory array, the voltage pulse based at least in part on the fall time of the voltage pulse.
11. The apparatus of claim 10 , wherein the control unit is further operable to adjust the voltage pulse based at least in part on determining the set of pulse parameters.
12. The apparatus of claim 10 , wherein the control unit is further operable to decrease the fall time of the voltage pulse and increase a resistivity of the memory cell based at least in part on determining the set of pulse parameters for the voltage pulse.
13. The apparatus of claim 10 , wherein the control unit is further operable to read a reset state of the memory cell after applying the voltage pulse.
14. The apparatus of claim 10 , wherein the control unit is further operable to detect a programmed resistance value for the memory cell after applying the voltage pulse.
15. The apparatus of claim 14 , wherein detecting the programmed resistance value comprises determining a resistivity of the memory cell to adjust the fall time.
16. The apparatus of claim 10 , wherein the set of pulse parameters for the voltage pulse further includes a pulse width, a pulse amplitude, and a pulse shape of the voltage pulse.
17. The apparatus of claim 16 , wherein the control unit is further operable to adjust the pulse width, the pulse amplitude, and the pulse shape of the voltage pulse based at least in part on determining the set of pulse parameters.