Memory controller with staggered request signal output
A memory controller having a time-staggered request signal output. A first timing signal is generated while a second timing signal is generated having a first phase difference relative to the first timing signal. An address value is transmitted in response to the first timing signal and a control value is transmitted in response to the second timing signal, the address value and control value constituting portions of a first memory access request.
1. A memory controller comprising:
request logic to generate a memory access request, the memory access request including command information and control information, the control information to be used by a memory device to receive the command information;
a first output driver circuit to launch the control information to the memory device; and
a second output driver circuit to launch the command information in a staggered relationship with the control information.
2. The memory controller according to claim 1 , wherein:
the staggered relationship is based on a propagation time for the command information to travel between the second output driver circuit and the memory device.
3. The memory controller according to claim 2 , wherein:
the second output driver launches the command information after the first output driver launches the control information.
4. The memory controller according to claim 2 , wherein the timing controller includes storage to store respective first and second phase values corresponding to the respective first and second phase relationships.
5. The memory controller according to claim 1 , wherein:
the first output driver circuit launches the control information in response to a first timing signal; and
the second output driver circuit launches the command information in response to a second timing signal, wherein a phase relationship between the first and second timing signals is based on the programmable offset.
6. The memory controller according to claim 1 , further comprising:
a reference timing signal generator to generate a reference timing signal; and
a timing controller to generate the first and second timing signals, the first and second timing signals having independently controllable first and second phase relationships with respect to the reference timing signal.
7. The memory controller according to claim 1 , further comprising:
a timing signal driver circuit to launch a timing signal to the memory device, the launched timing signal to accompany the control information and the command information, the timing signal to arrive at the memory device in a predefined phase alignment with respect to the control information and the command information.
8. A method of operation in a memory controller, the method comprising:
in an operating mode
generating a memory access request, the memory access request including command information and control information, the control information to be used by a memory device to receive the command information;
launching the control information to the memory device; and
launching the command information in a staggered relationship with the control information.
9. The method according to claim 8 , wherein the staggered relationship is based on a propagation time for the command information to travel between the memory controller and the memory device.
10. The method according to claim 8 , further comprising:
generating first and second timing signals;
wherein launching of the control information is carried out in response to receiving the first timing signal; and
wherein launching of the command information is carried out in response to receiving the second timing signal.
11. The method according to claim 10 , further comprising:
generating a reference timing signal; and
generating the first and second timing signals with independently controllable first and second phase relationships with respect to the reference timing signal.
12. The method according to claim 11 , wherein the independently controllable first and second phase relationships are based on respective first and second phase values.
13. The method according to claim 12 , further comprising:
in an initialization mode
determining the first and second phase values for the first and second timing signals.
14. The method according to claim 8 , further comprising:
launching a timing signal to the memory device, the launched timing signal to accompany the control information and the command information, and to arrive at the memory device in a predefined phase alignment with respect to the control information and the command information.
15. An integrated circuit (IC) chip comprising:
memory control circuitry including request logic to generate a memory access request, the memory access request including command information and control information, the control information to be used by a memory device to receive the command information;
a first output driver circuit to launch the control information to the memory device; and
a second output driver circuit to launch the command information in a staggered relationship with the control information.
16. The IC chip according to claim 15 , wherein the staggered relationship is based on a propagation time for the command information to travel between the second output driver circuit and the memory device.
17. The IC chip according to claim 15 , wherein the second output driver launches the command information after the first output driver launches the control information.
18. The IC chip according to claim 17 , wherein the memory control circuitry further comprises:
a third output driver circuit to launch a timing signal the launched timing signal to accompany the control information and the command information, and to arrive at the memory device in a predefined phase alignment with respect to the control information and the command information.
19. The IC chip according to claim 18 , wherein the predefined phase alignment is based on the staggered relationship.
20. The IC chip according to claim 15 , embodied as a DRAM memory controller IC chip.