Quality of service aware storage class memory/NAND flash hybrid solid state drive
A device having a controller configured to interface with a host, a storage class memory configured to interface with the controller and a flash memory configured to interface with the controller, wherein both the storage class memory and the flash memory are configured to store data, and wherein the controller is configured to separate the data according to latency critical data and non-latency critical data.
1. A device, comprising:
a controller configured to interface with a host;
a storage class memory configured to interface with the controller; and
a flash memory configured to interface with the controller, wherein both the storage class memory and the flash memory are configured to store data, and wherein the controller is configured to separate the data according to a read or write bit, a sequential or random identified bit, a latency high or latency low bit, a read frequency high or low bit, a write frequency high or low bit, a read in the future bit, and a write in the future bit.
2. The device according to claim 1 , wherein the interface between the host and the controller is by NVMe standards.
3. The device according to claim 1 , wherein the interface between the host and the controller includes a capability to read data set management hints.
4. The device according to claim 1 , wherein latency crucial data is stored in the storage class memory.
5. The device according to claim 1 , wherein the storage class memory is connected to the flash memory.
6. The device according to claim 1 , wherein the controller is configured with an interface with PCIe, PCI, PCI-X, AGP or NVME standards.
7. The device according to claim 1 , wherein the storage class memory is one of resistive random access memory, phase change memory and magneto-resistive random access memory.
8. The device according to claim 1 , wherein the flash memory is a NAND flash memory.
9. The device according to claim 1 , wherein the flash memory is constructed from one of single level cell, multi-level cell, and triple level cell units.
10. The device according to claim 1 , wherein the controller is configured with an algorithm for evicting data from the storage class memory according to a data set management hint.
11. The device according to claim 1 , wherein the storage class memory is one of resistive random access memory, phase change memory, magneto-resistive random access memory and non-volatile memory.
12. The device according to claim 1 , wherein the host is a computer.
13. The device according to claim 1 , wherein the data with a fast namespace is stored in the storage class memory and the data with a slow namespace is stored in the flash memory.
14. A method, comprising:
checking an attribution code of data in a first memory wherein the data includes a read or write bit, a sequential or random identified bit, a latency high or latency low bit, a read frequency high or low bit, a write frequency high or low bit, a read in the future bit, and a write in the future bit; and
moving the data from the first memory to a second memory when the attribution code indicates that the data is required to be stored in a memory with specific attributes and the second memory has the specific attributes compared to the first memory.
15. The method according to claim 14 , wherein the attribution code is at least one of a read in the future attribute, a write in the future attribute, a read frequency attribute, a write frequency attribute.
16. The method according to claim 14 , wherein the attribution code is a latency attribute.
17. A method for reading data, comprising:
receiving a read command from a host;
reading data from a memory, wherein the data includes a read or write bit, a sequential or random identified bit, a latency high or latency low bit, a read frequency high or low bit, a write frequency high or low bit, a read in the future bit, and a write in the future bit;
determining if the data has a low latency data set management hint;
storing the data in a flash memory when the data does not have a low latency data set management hint; and
storing the data in a storage class memory when the data has a low latency data set management hint.
18. The method according to claim 17 , further comprising:
determining a presence of unused memory over a size of the data in both the flash memory and the storage class memory; and
moving a set of data from the storage class memory to the flash memory when a replacement algorithm determines an eviction proceeding and the flash memory and the storage class memory are full.
19. A method for writing data, comprising:
receiving a write command from a host;
determining if the data has a low latency data set management hint;
writing the data in a flash memory when the data does not have a low latency data set management hint;
determining a presence of unused memory over a size of the write data in both the flash memory and a storage class memory;
moving a set of data from the storage class memory to the flash memory when a replacement algorithm determines an eviction proceeding and the flash memory and the storage class memory are full; and
writing the data in the storage class memory when the data has a low latency data set management hint; wherein the data has a read or write bit, a sequential or random identified bit, a latency high or latency low bit, a read frequency high or low bit, a write frequency high or low bit, a read in the future bit, and a write in the future bit.