Memory cells having a controlled-conductivity region

1. A memory cell, comprising:

a transistor having a channel region between a first source/drain region and a second source/drain region; the transistor having a transistor gate extending along the channel region;

a controlled-conductivity region adjacent the first source/drain region, the controlled-conductivity region being along a surface of the transistor gate and separated from the surface of the transistor gate by a dielectric material, the controlled-conductivity region being gated by said transistor gate; the controlled-conductivity region having a low-conductivity mode and a high-conductivity mode; the high-conductivity mode having a conductivity at least 10 6 greater than a conductivity of the low-conductivity mode; the channel region comprising a first material having a first bandgap, and the controlled-conductivity region comprising a second material having a second bandgap which is greater than the first bandgap; an insulative material over an upper surface of the transistor gate, and a conductive region over the controlled-conductivity region and along the insulative material;

a charge-storage device electrically coupled to the first source/drain region through the controlled-conductivity region; and

a bitline electrically coupled to the second source/drain region.

2. The memory cell of claim 1 wherein the controlled-conductivity region includes a controlled conductivity material selected from the group consisting of silicon, silicon carbide, chalcogenide, tungsten sulfide, tungsten silicide, molybdenum sulfide, molybdenum silicide, indium gallium zinc oxide, and mixtures thereof.

3. The memory cell of claim 2 wherein the controlled-conductivity material is between a pair of electrodes, and wherein a voltage across the electrodes exhibits snap-back behavior during operation of the controlled-conductivity region.

4. The memory cell of claim 1 wherein the controlled-conductivity region is switched between the high and low-conductivity modes utilizing an electrical component adjacent the controlled-conductivity region.

5. The memory cell of claim 1 wherein the controlled-conductivity region is switched between the high and low-conductivity modes utilizing an electrical field extending into the controlled-conductivity region.

6. The memory cell of claim wherein the controlled-conductivity region is a first controlled-conductivity region, and wherein a second controlled-conductivity region is between the second source/drain region and the bitline.

7. A memory cell, comprising:

a transistor having a channel region between a pair of source/drain regions within a substrate material, and having a transistor gate along the channel region, the transistor gate having a lowest region extending within the channel region and having sidewalks extending vertically above the channel region, the transistor gate being spaced from the substrate material along the lowest region and sidewalk by an intervening dielectric material;

an insulative material over an upper surface of the transistor gate;

a controlled-conductivity region adjacent and physically contacting one of the source/drain regions; the controlled-conductivity region having a high-conductivity mode and a low-conductivity mode; the high-conductivity mode having a conductivity at least 10 3 greater than a conductivity of the low-conductivity mode; the gate extending along the controlled-conductivity region in operational proximity to the controlled-conductivity region so that an electrical field from the gate switches the controlled-conductivity region between the high and low-conductivity modes;

a conductive region over the controlled-conductivity region and along the insulative material; and

a charge-storage device electrically coupled to said one of the source/drain regions through the controlled-conductivity region.

8. The memory cell of claim 7 wherein the conductivity of the high-conductivity mode is at least 10 6 greater than the conductivity of the low-conductivity mode.

9. The memory cell of claim 7 wherein the conductivity of the high-conductivity mode is at least 10 9 greater than the conductivity of the low-conductivity mode.

10. The memory cell of claim 7 wherein a voltage on the gate and utilized to generate the electric field that switches the controlled-conductivity region between the high and low-conductivity modes is less than or equal to about 3 volts.

11. The memory cell of claim 7 wherein a voltage on the gate and utilized to generate the electric field that switches the controlled-conductivity region between the high and low-conductivity modes is less than or equal to about 1 volt.

12. The memory cell of claim 7 wherein a voltage on the gate and utilized to generate the electric field that switches the controlled-conductivity region between the high and low-conductivity modes is less than or equal to about 50 millivolts.

13. The memory cell of claim 7 wherein the controlled-conductivity region includes one or more of silicon, silicon carbide, chalcogenide, tungsten sulfide, tungsten silicide, molybdenum sulfide, molybdenum silicide, and indium gallium zinc oxide; and wherein the channel region includes doped silicon.

14. A memory cell, comprising:

a recessed transistor having a channel region between a first source/drain region and a second source/drain region, and having a transistor gate along the channel region and extending upwardly between the first and second source/drain regions, the transistor gate having an uppermost surface and being spaced from the first and second source/drain regions by a dielectric material along sidewalls of the transistor gate;

a controlled-conductivity region adjacent the first source/drain region; the controlled-conductivity region having a high-conductivity mode and a low-conductivity mode; the high-conductivity mode having a conductivity at least 10 6 greater than a conductivity of the low-conductivity mode; the controlled-conductivity region comprising controlled-conductivity material which includes one or more of silicon, silicon carbide, chalcogenide, tungsten sulfide, tungsten silicide, molybdenum sulfide, molybdenum silicide, and indium gallium zinc oxide; the gate extending along the controlled-conductivity region in operational proximity to the controlled-conductivity region so that an electrical field from the gate switches the controlled-conductivity region between the high and low-conductivity modes;

a conductive region over the controlled-conductivity region and extending to an elevation above an elevation of, the uppermost surface of the transistor gate;

a capacitor electrically coupled to the first source/drain region through the controlled-conductivity region; and

a bitline electrically coupled to the second source/drain region.

15. The memory cell of claim 14 wherein the controlled-conductivity region includes a pair of conductive electrodes; and wherein the controlled-conductivity material is between the conductive electrodes.

16. The memory cell of claim 15 wherein the conductive electrodes comprise metal.

17. The memory cell of claim 15 wherein the conductive electrodes comprise conductively-doped semiconductor material.