Methods, apparatus, and system for improved nanowire/nanosheet spacers
A semiconductor structure, comprising a semiconductor substrate; at least one fin, wherein the at least one fin comprises one or more first layers and one or more second layers, wherein the first layers and the second layers are interspersed and the first layers laterally extend further than the second layers; a dummy gate structure comprising a first spacer material disposed on sidewalls of the dummy gate; a second spacer material disposed adjacent to each of the second layers, wherein sidewalls of the fin comprise exposed portions of each of the first layers and the second spacer material, and an epitaxial source/drain material disposed on at least the exposed portions of each of the first layers. Methods and systems for forming the semiconductor structure.
1. A semiconductor structure, comprising:
a semiconductor substrate;
at least one fin, wherein the at least one fin comprises one or more first layers comprising a first material and one or more second layers comprising a second material, wherein the first layers and the second layers are interspersed and the first layers laterally extend further than the second layers;
a dummy gate structure comprising a first spacer material disposed on sidewalls of the dummy gate;
a second spacer material disposed adjacent to each of the second layers, wherein sidewalls of the fin comprise exposed portions of each of the first layers and the second spacer material, and the second spacer material differs from the first spacer material; and
an epitaxial source/drain material disposed on at least the exposed portions of each of the first layers.
2. The semiconductor structure of claim 1 , wherein the second material is more susceptible to oxidation than the first material.
3. The semiconductor structure of claim 1 , wherein the first material is silicon and the second material is silicon/germanium (SiGe).
4. The semiconductor structure of claim 1 , wherein the first spacer material comprises a low-k dielectric material.
5. The semiconductor structure of claim 1 , wherein the epitaxial source/drain material is further disposed on the semiconductor substrate.
6. A semiconductor structure, comprising:
a semiconductor substrate;
at least one fin, wherein the at least one fin comprises one or more first layers comprising silicon and one or more second layers comprising silicon germanium having a formula Si x Ge 1-x , wherein 0.1≤x≤0.5, wherein the first layers and the second layers are interspersed and the first layers laterally extend further than the second layers;
a dummy gate structure comprising a first spacer material disposed on sidewalls of the dummy gate;
a second spacer material disposed adjacent to each of the second layers, wherein sidewalls of the fin comprise exposed portions of each of the first layers and the second spacer material and the second spacer material comprises a low-k dielectric material or silicon nitride, and
an epitaxial source/drain material disposed on at least the exposed portions of each of the first layers.
7. The semiconductor structure of claim 6 , wherein x≈0.5.
8. The semiconductor structure of claim 6 , wherein the first spacer material comprises a low-k dielectric material or silicon nitride.
9. The semiconductor structure of claim 6 , wherein the epitaxial source/drain material is further disposed on the semiconductor substrate.
10. The semiconductor structure of claim 6 , wherein the epitaxial source/drain material is merged.
11. A semiconductor structure, comprising:
a semiconductor substrate;
at least one fin, wherein the at least one fin comprises one or more first layers comprising silicon germanium having a formula Si x Ge 1-x and one or more second layers comprising silicon germanium having a formula Si y Ge 1-y , wherein y>x, wherein the first layers and the second layers are interspersed and the first layers laterally extend further than the second layers;
a dummy gate structure comprising a first spacer material disposed on sidewalls of the dummy gate;
a second spacer material disposed adjacent to each of the second layers, wherein sidewalls of the fin comprise exposed portions of each of the first layers and the second spacer material and the second spacer material comprises a low-k dielectric material or silicon nitride, and
an epitaxial source/drain material disposed on at least the exposed portions of each of the first layers.
12. The semiconductor structure of claim 11 , wherein the first spacer material comprises a low-k dielectric material or silicon nitride.
13. The semiconductor structure of claim 11 , wherein the epitaxial source/drain material is further disposed on the semiconductor substrate.
14. The semiconductor structure of claim 11 , wherein the epitaxial source/drain material is merged.