3D IC method and device
View Patent ↗A method of three-dimensionally integrating elements such as singulated die or wafers and an integrated structure having connected elements such as singulated dies or wafers. Either or both of the die and wafer may have semiconductor devices formed therein. A first element having a first contact structure is bonded to a second element having a second contact structure. First and second contact structures can be exposed at bonding and electrically interconnected as a result of the bonding. A via may be etched and filled after bonding to expose and form an electrical interconnect to interconnected first and second contact structures and provide electrical access to this interconnect from a surface.
1. A bonded structure comprising:
a first contact structure disposed on a first substrate, the first contact structure comprising a metal selected from copper, tungsten, nickel, gold or alloys thereof;
a first non-metallic region located on a first surface of the first substrate proximate to the first contact structure;
a second contact structure disposed on a second substrate and bonded to the first contact structure, the second contact structure comprising a metal selected from copper, tungsten, nickel, gold or alloys thereof; and
a second non-metallic region located on a second surface of the second substrate proximate to the second contact structure,
wherein the first non-metallic region contacts and is directly bonded to the second non-metallic region along an interface with a bonding strength greater than 1 J/m 2 , the interface extending substantially to the bonded first and second contact structures.
2. The bonded structure of claim 1 , further comprising a via in the first substrate exposed to at least the first contact structure.
3. The bonded structure of claim 2 , further comprising a conductive material in the via and connected to at least the first contact structure, the via extending from a back side of the first substrate to the first contact structure on a front side of the first substrate.
4. The bonded structure of claim 1 , wherein each of the first and second non-metallic regions comprises one of an oxide and a nitride material.
5. The bonded structure of claim 1 , wherein a perimeter of the first contact structure is within a perimeter of the second contact structure.
6. The bonded structure of claim 1 , wherein the first contact structure contacts and is directly bonded to the second contact structure without melting or reflowing.
7. The bonded structure of claim 1 , wherein the first contact structure comprises a first metal and the second contact structure comprises a second metal different from the first metal.
8. The bonded structure of claim 1 , wherein the substrate comprises a semiconductor substrate including an integrated circuit.
9. The bonded structure of claim 1 , wherein each of said first and second contact structures comprises a thermally-expanded metal contact structure.
10. The bonded structure of claim 1 , wherein a contact resistance between the first and second contact structures is less than 1 ohm/μm2.
11. The bonded structure of claim 1 , wherein the first contact structure comprises a contact in a via extending from a front side of the first substrate to directly contact the second contact structure on a back side of the first substrate.
12. The bonded structure of claim 11 , wherein first contact structure consists of the contact in the via.
13. A bonded structure comprising:
a first contact structure disposed on a first substrate;
a first non-metallic region located on a first surface of the first substrate proximate to the first contact structure;
a second contact structure disposed on a second substrate; and
a second non-metallic region located on a second surface of the second substrate proximate to the second contact structure,
wherein the first non-metallic region contacts and is directly bonded to the second non-metallic region along an interface with a bonding strength greater than 1 J/m 2 , wherein the first contact structure contacts and is directly bonded to the second contact structure without melting or reflowing, the interface extending substantially to the bonded first and second contact structures.
14. The bonded structure of claim 13 , further comprising a via in the first substrate exposed to at least the first contact structure.
15. The bonded structure of claim 14 , further comprising a conductive material in the via and connected to at least the first contact structure, the via extending from a back side of the first substrate to the first contact structure on a front side of the first substrate.
16. The bonded structure of claim 13 , wherein each of the first and second non-metallic regions comprises one of an oxide and a nitride material.
17. The bonded structure of claim 13 , wherein a perimeter of the first contact structure is within a perimeter of the second contact structure.
18. The bonded structure of claim 13 , wherein the first contact structure comprises a metal selected from copper, tungsten, nickel, gold or alloys thereof.
19. The bonded structure of claim 18 , wherein the first contact structure comprises a metal selected from copper, tungsten, nickel, gold or alloys thereof.
20. The bonded structure of claim 13 , wherein the substrate comprises a semiconductor substrate including an integrated circuit.
21. The bonded structure of claim 13 , wherein each of said first and second contact structures comprises a thermally-expanded metal contact structure.
22. The bonded structure of claim 13 , wherein a contact resistance between the first and second contact structures is less than 1 ohm/μm2.
23. The bonded structure of claim 13 , wherein the first contact structure comprises a contact in a via extending from a front side of the first substrate to directly contact the second contact structure on a back side of the first substrate.
24. The bonded structure of claim 23 , wherein first contact structure consists of the contact in the via.