Gapfill of variable aspect ratio features with a composite PEALD and PECVD method
Provided herein are methods and apparatus for filling one or more gaps on a semiconductor substrate. The disclosed embodiments are especially useful for forming seam-free, void-free fill in both narrow and wide features. The methods may be performed without any intervening etching operations to achieve a single step deposition. In various implementations, a first operation is performed using a novel PEALD fill mechanism to fill narrow gaps and line wide gaps. A second operation may be performed using PECVD methods to continue filling the wide gaps.
1. A method of filling a gap adjacent to a field region on a substrate surface, the method comprising:
(a) introducing a first reactant in vapor phase into a reaction chamber having the substrate therein, and allowing the first reactant to adsorb onto the substrate surface;
(b) introducing a second reactant in vapor phase into the reaction chamber;
(c) exposing the substrate surface to plasma to drive a surface reaction between the first and second reactants on the substrate surface to form a film layer that lines the bottom and sidewalls of the gap, wherein the film layer is denser near the field region and upper sidewalls of the gap compared to near the bottom and lower sidewalls of the gap;
(d) sweeping the reaction chamber without performing a pumpdown; and
(e) repeating operations (a) through (d) to form additional film layers to thereby fill the gap through a bottom-up fill mechanism, without formation of a void or seam.
2. The method of claim 1 , wherein the first reactant comprises a silicon-containing reactant and the second reactant comprises an oxidizing reactant.
3. The method of claim 1 , wherein the gap is reentrant.
4. The method of claim 1 , wherein the gap is filled through a bottom-up fill mechanism in which the film layers are deposited thinner near the top of the gap and thicker near the bottom of the gap.