Apparatus for processing substrate
An apparatus for processing a substrate is provided. The apparatus includes a processing apparatus and a controller. The processing apparatus includes a chamber. The controller includes a memory and a processor coupled to the memory. The memory stores computer-executable instructions for controlling the processor to control a process of the processing apparatus. The process includes first forming a first film in a first region of the substrate in the chamber by chemical vapor deposition. The process further includes second forming a second film in a second region of the substrate in the chamber by atomic layer deposition. The first forming and the second forming are performed without moving the substrate out of the chamber.
1. An apparatus for processing a substrate, the apparatus comprising:
at least a first and a second chamber; and
a controller comprising a memory and a processor coupled to the memory, wherein
the memory stores computer-executable instructions for controlling the processor to perform a process comprising:
first forming a first film in a first region of the substrate in the first chamber by chemical vapor deposition;
second forming, by introducing a precursor of material adsorbed with the substrate into the chamber, introducing modifying gas into the chamber, and generating plasma from the modifying gas, a second film in a second region of the substrate in the first chamber; and
etching the substrate in the second chamber, wherein
the first forming and the second forming are performed without moving the substrate out of the first chamber,
the first and second chambers are different chambers, and
the etching performs an atomic layer etching and includes:
modifying a surface of the substrate by one of N plasma and H plasma, purging the chamber, and
removing the surface modified by the one of N plasma and the H plasma by halogen gas.
2. The apparatus according to claim 1 , further comprising:
an antenna arranged above the first chamber and controlled by the controller, and
a lower electrode arranged opposite to the antenna in the first chamber and configured to hold the substrate thereon, the lower electrode being controlled by the controller, wherein
the process further comprising:
applying a voltage to the lower electrode during the chemical vapor deposition, and
applying a voltage to the antenna in a modification step of the second forming step.
3. The apparatus according to claim 2 , wherein at least one of:
the applying a voltage to the lower electrode during the chemical vapor deposition comprises maintaining a voltage at such a level as to prevent damage to the substrate or to generate plasma of a low ion energy, and
the applying a voltage to the antenna in the modification step of the second forming step comprises maintaining a voltage at such a level as to prevent damage to the substrate.
4. The apparatus according to claim 1 , further comprising:
an antenna arranged above the first chamber and controlled by the controller, and
a lower electrode arranged opposite to the antenna in the first chamber and configured to hold the substrate thereon, the lower electrode being controlled by the controller, wherein
the process further comprising:
applying a voltage to the lower electrode without applying a voltage to the antenna during the chemical vapor deposition; and
applying a voltage to the antenna without applying a voltage to the lower electrode in a modification step of the second forming step.
5. The apparatus according to claim 1 , wherein
the first forming forms the first film of hydrophobic surface on the first region of a hydrophilic surface of the substrate,
the second forming forms the second film by adsorbing, on the second region of the hydrophilic surface of the substrate, the precursor, and
the precursor reacts with a hydroxyl group.
6. The apparatus according to claim 1 , wherein
the first forming performs one of an anisotropic CVD and an isotropic CVD by controlling a voltage applied to the lower electrode.
7. The apparatus according to claim 1 , wherein
the first forming forms the first film on a top region and a bottom region of a feature of the substrate, and
the second forming forms the second film on a sidewall of the feature of the substrate.
8. The apparatus according to claim 1 , wherein
the substrate contains at least one of SiO2, SiN, Si and Ge, and
the second forming forms a Si-containing film as the second film.
9. The apparatus according to claim 1 , wherein the first forming and the second forming are performed repeatedly in this order.
10. The apparatus according to claim 9 , wherein
the process further comprising:
ceasing the second forming before the second forming removes the first film completely; and
performing the first forming while the first film remains on the substrate.
11. The apparatus according to claim 1 , wherein the first forming and the second forming are performed by using inductively-coupled plasmas or capacitively-coupled plasmas.
12. The apparatus according to claim 1 , wherein the substrate has a hydrophilic surface or a surface subjected to hydrophilic treatment.
13. The apparatus according to claim 1 , wherein
the process further comprising:
determining whether a predetermined condition has been met after the first forming and the second forming; and
repeating a cycle including the first forming and the second forming when the determining determines that the predetermined condition has not been met.
14. The apparatus according to claim 1 , wherein the first region of the substrate and the second region of the substrate do not substantially overlap.
15. The apparatus according to claim 1 , wherein the second forming step is conducted after the first forming step.
16. The apparatus according to claim 1 , wherein the second forming includes repeating one or more cycles comprising the introducing a precursor, the introducing modifying gas, and the generating plasma.
17. The apparatus according to claim 1 , wherein
the first forming deposits the first film by fluorocarbon plasmas, and
the first film contains carbon.
18. An apparatus for processing a substrate, the apparatus comprising:
at least a first and a second chamber; and
a controller comprising a memory and a processor coupled to the memory, wherein
the memory stores computer-executable instructions for controlling the processor to perform a process comprising:
first forming a first film in a first region of the substrate in the first chamber;
second forming, by introducing a precursor of material adsorbed with the substrate into the chamber, introducing modifying gas into the chamber, and generating plasma from the modifying gas, a second film in a second region of the substrate in the first chamber; and
etching the substrate in the second chamber, wherein
the first forming and the second forming are performed without moving the substrate out of the first chamber,
the first and second chambers are different chambers, and
the etching includes:
modifying a surface of the substrate by one of N plasma and H plasma, purging the chamber, and
removing the surface modified by the one of N plasma and the H plasma by halogen gas.