IP Library Granted Patent US 10,256,192
Granted Patent B2
US 10,256,192 · App. 15/663,042 · Granted Apr 9, 2019

Fan-out semiconductor package

Inventors: Moon Hee Yi (Suwon-si, KR); Byoung Chan Kim (Suwon-si, KR); Yong Ho Baek (Suwon-si, KR); Jung Hyun Cho (Suwon-si, KR)
Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.
H01L23/5389H01L21/486H01L23/49827H01L23/49838H01L23/5384H01L24/02H01L24/13H01L24/19H01L24/20H01L24/24H01L24/25H01L2224/02379H01L2224/02381H01L2224/13024H01L2224/16225H01L2224/24137H01L2224/24195H01L2224/25171H01L2224/32225H01L2224/73204H01L2924/18162H01L2924/19105
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Quick Facts
Patent No.
US 10,256,192
App. No.
15/663,042
Granted
Apr 9, 2019
Kind
B2
Abstract

A fan-out semiconductor package includes a first connection member having a through-hole, a semiconductor chip disposed in the through-hole, at least one component-embedded substrate disposed adjacent the semiconductor chip in the through-hole and spaced apart from the semiconductor chip by a predetermined distance and having a plurality of passive components embedded therein, an encapsulant encapsulating at least portions of the first connection member, the at least one component-embedded substrate, and the semiconductor chip, and a second connection member disposed on the first connection member, the at least one component-embedded substrate, and the semiconductor chip. The first and second connection members each include redistribution layers electrically connected to the connection pads of the semiconductor chip, and the plurality of passive components embedded in the at least one component-embedded substrate are electrically connected to the connection pads of the semiconductor chip through the redistribution layer of the second connection member.

Claims (56)

1. A fan-out semiconductor package, comprising:

a first connection member having a through-hole;

a semiconductor chip disposed in the through-hole of the first connection member and having an active surface including connection pads disposed thereon and an inactive surface opposite the active surface;

a first component-embedded substrate disposed in the through-hole of the first connection member and spaced apart from the semiconductor chip, and including a first resin layer and a first passive component at least partially embedded in the first resin layer;

an encapsulant encapsulating portions of the first connection member, the first component-embedded substrate, and the semiconductor chip, the encapsulant being spaced-apart from the first passive component at least by the first resin layer; and

a second connection member disposed on the first connection member, the first component-embedded substrate, and the active surface of the semiconductor chip,

wherein the first connection member and the second connection member include, respectively, redistribution layers electrically connected to the connection pads of the semiconductor chip, and

the first passive component is electrically connected to the connection pads of the semiconductor chip through the redistribution layer of the second connection member.

2. The fan-out semiconductor package of claim 1 , wherein the first component-embedded substrate further includes a wiring member including a wiring layer disposed on the first passive component and electrically connected to the first passive component.

3. The fan-out semiconductor package of claim 2 , wherein the first component-embedded substrate further includes a substrate having a first cavity defined therein,

the first passive component is disposed in the first cavity, and

the first passive component and the encapsulant are spaced-apart from each other also by the substrate.

4. The fan-out semiconductor package of claim 3 , wherein the substrate further includes a second cavity spaced apart from each other from the first cavity,

each of a plurality of passive components including the first passive component disposed in the first cavity has a thickness smaller than a thickness of each of a plurality of passive components disposed in the second cavity.

5. The fan-out semiconductor package of claim 3 , wherein the first component-embedded substrate further includes a first metal layer disposed on the first resin layer, and

the encapsulant and the first passive component are spaced apart from each other also by the first metal layer.

6. The fan-out semiconductor package of claim 5 , further comprising:

a plurality of disposed in the first connection member; and

a second metal layer disposed on the encapsulant, and

wherein the second metal layer is electrically connected to the first metal layer and the plurality of vias.

7. The fan-out semiconductor package of claim 1 , further comprising a second component-embedded substrate disposed in the through-hole of the first connection member and spaced apart from the first component-embedded substrate, and including a second resin layer and a plurality of passive components at least partially embedded in the second resin layer, the encapsulant being spaced-apart from the plurality of passive component of the second component-embedded substrate at least by second resin layer,

each of a plurality of passive components including the first passive component disposed in the first component-embedded substrate has a thickness smaller than a thickness of each of the plurality of passive components disposed in the second component-embedded substrate.

8. The fan-out semiconductor package of claim 7 , wherein the first and second component-embedded substrates further include wiring members including wiring layers disposed on the plurality of passive components and electrically connected to the plurality of passive components, respectively.

9. The fan-out semiconductor package of claim 8 , wherein the first and second component-embedded substrates each include substrates having cavities, and

the plurality of passive components respectively embedded in first and second component-embedded substrates are disposed in the cavities of the substrates of the first and second component-embedded substrates, respectively.

10. The fan-out semiconductor package of claim 9 , wherein the first and second component-embedded substrates further include first metal layers disposed on the first and second resin layers, respectively, and

the encapsulant and the plurality of passive components of the first and second component-embedded substrates are spaced apart from each other also by the first metal layers, respectively.

11. The fan-out semiconductor package of claim 10 , further comprising:

a plurality of vias disposed in the first connection member; and

a second metal layer disposed on the encapsulant, and

wherein the second metal layer is connected to the first metal layers and the plurality of vias.

12. The fan-out semiconductor package of claim 1 , wherein the first connection member includes a first insulating layer, a first redistribution layer in contact with the second connection member and embedded in the first insulating layer, and a second redistribution layer disposed on the other surface of the first insulating layer opposing one surface of the first insulating layer in which the first redistribution layer is embedded.

13. The fan-out semiconductor package of claim 12 , wherein the first connection member further includes a second insulating layer disposed on the first insulating layer and covering the second redistribution layer and a third redistribution layer disposed on the second insulating layer.

14. The fan-out semiconductor package of claim 12 , wherein a distance between the redistribution layer of the second connection member and the first redistribution layer is greater than a distance between the redistribution layer of the second connection member and the connection pad of the semiconductor chip.

15. The fan-out semiconductor package of claim 1 , wherein the first connection member includes a first insulating layer, a first redistribution layer and a second redistribution layer disposed on opposite surfaces of the first insulating layer, respectively, a second insulating layer disposed on the first insulating layer and covering the first redistribution layer, and a third redistribution layer disposed on the second insulating layer.

16. The fan-out semiconductor package of claim 15 , wherein the first connection member further includes a third insulating layer disposed on the first insulating layer and covering the second redistribution layer and a fourth redistribution layer disposed on the third insulating layer.

17. The fan-out semiconductor package of claim 15 , wherein the first insulating layer has a thickness greater than a thickness of the second insulating layer.

18. The fan-out semiconductor package of claim 10 , wherein the first and second component-embedded substrates further a plurality of first vias penetrating through the substrates and connected to the first metal layers, respectively.

19. The fan-out semiconductor package of claim 5 , wherein the first component-embedded substrate further includes a plurality of first vias penetrating through the substrate and connected to the first metal layer.

20. A fan-out semiconductor package, comprising:

a first connection member having a through-hole;

a semiconductor chip disposed in the through-hole of the first connection member and having an active surface including connection pads disposed thereon and an inactive surface opposite the active surface;

a component-embedded substrate disposed in the through-hole of the first connection member and spaced apart from the semiconductor chip, and including a passive component embedded therein;

an encapsulant encapsulating portions of the first connection member, the component-embedded substrate, and the semiconductor chip; and

a second connection member disposed on the first connection member, the component-embedded substrate, and the active surface of the semiconductor chip,

wherein the first connection member and the second connection member include, respectively, redistribution layers electrically connected to the connection pads of the semiconductor chip, and

the component-embedded substrate further an insulating layer disposed on the passive component and having opening exposing portions of the passive component, a wiring layer disposed on the insulating layer and connected to the passive component through vias filling the openings in the insulating layer,

the insulating layer includes an upper surface facing the passive component, a lower surface on which the wiring layer is disposed, and a side surface connecting the upper and lower surfaces to each other and being in contact with the encapsulant, and

the passive component is electrically connected to the connection pads of the semiconductor chip through the redistribution layer of the second connection member, and the wiring layer and the via of the component-embedded substrate.

21. The fan-out semiconductor package of claim 20 , wherein the component-embedded substrate further includes a resin layer surrounding at least a portion of the passive components.

22. The fan-out semiconductor package of claim 21 , wherein the component-embedded substrate further includes a substrate having a cavity,

the passive component is disposed in the cavity,

the resin layer fills at least a portion of the cavity, and

the passive component is spaced apart from the encapsulant at least by the resin layer and the substrate.

23. The fan-out semiconductor package of claim 22 , wherein the component-embedded substrate further includes a metal layer disposed on the resin layer,

the passive component is spaced apart from the encapsulant also by the metal layer.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 3, 2019
From: SAMSUNG ELECTRO-MECHANICS CO., LTD.
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 049350/0756 →
CORRECTIVE ASSIGNMENT TO CORRECT THE NAME OF THE FIRST INVENTOR PREVIOUSLY RECORDED ON REEL 043132 FRAME 0480. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT. Recorded Sep 19, 2017
From: YI, MOON HEE; KIM, BYOUNG CHAN; BAEK, YONG HO; CHO, JUNG HYUN
To: SAMSUNG ELECTRO-MECHANICS CO., LTD.
Reel/Frame 043899/0815 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 28, 2017
From: YI, MOON HE; KIM, BYOUNG CHAN; BAEK, YONG HO; CHO, JUNG HYUN
To: SAMSUNG ELECTRO-MECHANICS CO., LTD.
Reel/Frame 043132/0480 →
Priority Claims (1)
KR 10-2016-0156779 · Nov 23, 2016 · national
Continuity (1)
Related Publication 20180145033A1 · May 24, 2018
Cited By (2)
US 12,469,793 US 12,712,584