Semiconductor device having a trench type device isolation film and method for fabricating the same

1. A semiconductor device, comprising;

a substrate comprising, a semiconductor layer;

a trench formed within the semiconductor layer;

a filling insulating film disposed within the trench; and

an insertion liner disposed within the filling insulating film, the insertion liner being spaced apart from the semiconductor layer and extending along the bottom surface of the trench,

wherein the insertion liner does not extend along a sidewall of the trench,

wherein the filling insulating film comprises a silicon oxide-based material and the insertion liner comprises a silicon nitride-based material,

wherein a thickness of the insertion liner is smaller than a thickness of a portion of the filling insulating film which is extended between the insertion liner and the substrate defining the bottom surface of the trench, and

wherein the filling insulating film entirely surrounds the insertion liner.

2. The semiconductor device of claim 1 , wherein the insertion liner comprises a material having an etch selectivity with respect to the filling insulating film.

3. The semiconductor device of claim 1 , further comprising:

an active region defined by the trench; and

a gate electrode formed across a portion of the filling insulating film and the active region.

4. A semiconductor device, comprising:

a substrate;

a trench formed within the substrate, the trench comprising a first sidewall and a second sidewall opposite to each other;

a first insulating film extending along the first sidewall, the second sidewall, and a bottom surface of the trench;

a second insulating film disposed on the first insulating film, the second insulating film extending along the bottom surface of the trench and, the first sidewall of the trench, wherein a thickness of the second insulating film on the bottom surface of the trench is greater than a thickness of the second insulating film on the first sidewall of the trench; and

a third insulating film disposed on the second insulating film, the third insulating film filling the trench,

wherein a thickness of the first insulating film on the bottom surface of the trench is greater than the thickness of the second insulating film on the bottom surface of the trench, and

wherein an uppermost portion of the second insulating film is exposed by the first insulating film and the third insulating film.

5. The semiconductor device of claim 4 , wherein a thickness of the first insulating film on the first sidewall of the trench is greater than a thickness of the second insulating film on the first sidewall of the trench.

6. The semiconductor device of claim 4 , wherein a thickness of the first insulating film on the bottom surface of the trench is greater than a thickness of the second insulating film on the first sidewall of the trench.

7. The semiconductor device of claim 4 , wherein the second insulating film extends along the first sidewall, the bottom surface, and the second sidewall of the trench.

8. The semiconductor device of claim 4 , wherein the first insulating film on the second sidewall. of the trench is in direct contact with the third insulating film.

9. The semiconductor device of claim 8 , wherein the second insulating film does not extend along the second sidewall of the trench.

10. The semiconductor device of claim 4 , wherein the third insulating film is in direct contact with the second insulating film.

11. The semiconductor device of claim 4 , wherein the first insulating film and the third insulating file each comprise a silicon oxide-based material, and the second insulating film comprises a silicon nitride-based material.

12. A semiconductor device, comprising: a substrate;

a first trench formed within the substrate, the first trench having a first width;

a second trench formed within the substrate, the second trench having a second width different from the first width;

a first device isolation film comprising a first insulating film extending along a sidewall and a bottom surface of the first trench, a second insulating film disposed on the first insulating film and extending along the bottom surface of the first trench, and a third insulating film disposed on the second insulating film and filling the first trench, wherein the second insulating film comprises a material having an etch selectivity with respect to the first insulating film and the third insulating film; and

a second device isolation film filling the second trench and comprising a material having an etch selectivity with respect to the second insulating film,

wherein a thickness of the first insulating film on the bottom surface of the first trench is greater than a thickness of the second insulating film on the bottom surface of the first trench.

13. The semiconductor device of claim 12 , wherein a width of the first trench is greater than a width of the second trench.

14. The semiconductor device of claim 12 , wherein the first insulating film and the second device isolation film each comprise silicon oxide, and the second insulating film comprises silicon nitride.

15. A semiconductor device, comprising:

a substrate;

a first trench disposed in the substrate and having a first width:

a second trench disposed in the substrate and having a second width that is less than the first width;

a first device isolation film comprising a first insulating film that extends along a sidewall and a bottom surface of the first trench and includes silicon oxide, a second insulating film that is disposed on the first insulating film and extends along the sidewall and the bottom surface of the first trench and includes silicon nitride, and a third insulating film that is disposed on the second insulating film and fills the first trench and includes silicon oxide: and

a second device isolation film filling the second trench and including silicon oxide, the second device isolation film being a single-layered film;

wherein a thickness of the first insulating film on the bottom surface -if the first trench is greater than a thickness of the second insulating film on the bottom surface of the first trench.

16. A semiconductor device, comprising:

a substrate including a cell region and a peripheral region;

a first trench disposed in the peripheral region and having a first width;

a second trench disposed in the cell region and having a second width that is less than the first width;

a first device isolation film comprising a first silicon oxide film extending along a sidewall and a bottom surface of the first trench, a silicon nitride liner film disposed on the first silicon oxide film and extending along the sidewall and the bottom surface of the first trench, and a second silicon oxide film disposed on the silicon nitride liner film and filling the first trench;

a second device isolation film filling the second trench and including silicon oxide;

a gate electrode disposed adjacent to the first trench and including poly-silicon, titanium nitride, tungsten nitride and tungsten; and

a gate dielectric layer disposed between the gate electrode and the peripheral region of the substrate, and including silicon oxide and silicon oxynitride,

wherein a thickness of the first silicon oxide film on the bottom surface of the first trench is greater than a thickness of the silicon nitride liner film on the bottom surface of the first trench and the second device isolation film does not include a silicon nitride liner film.