Semiconductor memory device and method for manufacturing same
A semiconductor memory device according to an embodiment, includes a semiconductor pillar extending in a first direction, a first electrode extending in a second direction crossing the first direction, a second electrode provided between the semiconductor pillar and the first electrode, a first insulating film provided between the semiconductor pillar and the second electrode, a second insulating film provided between the first electrode and the second electrode and on two first-direction sides of the first electrode, and a conductive film provided between the second electrode and the second insulating film, the conductive film not contacting the first insulating film.
1. A semiconductor memory device, comprising:
a substrate;
a first semiconductor pillar provided above the substrate, the first semiconductor pillar extending in a first direction perpendicular to an upper surface of the substrate;
a first electrode extending in a second direction crossing the first direction;
a second electrode provided between the first semiconductor pillar and the first electrode, the second electrode being thicker than the first electrode in the first direction:
a first insulating film provided between the first semiconductor pillar and the second electrode, the second electrode being thicker than the first insulating film in a third direction;
a second insulating film provided between the first electrode and the second electrode and on two first-direction sides of the first electrode;
a conductive film provided between the second electrode and the second insulating film, the conductive film not contacting the first insulating film, the conductive film being disposed also on the two first-direction sides of the first electrode, the conductive film being formed of titanium nitride; and
a third insulating film provided between the second electrode and the conductive film, the conductive film being interposed between the third insulating film and the second insulating film that is thicker than the third insulating film.
2. The semiconductor memory device according to claim 1 , wherein the conductive film is a continuous film.
3. The semiconductor memory device according to claim 1 , wherein
the second electrode includes silicon.
4. The semiconductor memory device according to claim 1 , further comprising:
another first electrode extending in the second direction and being provided to be separated from the first electrode in the third direction crossing both the first direction and the second direction; and
an air gap being formed between the first electrode and the other first electrode.
5. The semiconductor memory device according to claim 1 , wherein the second electrode is thinner than the first insulating film in the first direction.
6. The semiconductor memory device according to claim 1 , wherein a length of the second electrode in the first direction is shorter than a length of the second insulating film in the first direction.
7. The semiconductor memory device according to claim 1 , wherein the third insulating film is disposed also on the two first-direction sides of the first electrode.
8. The semiconductor memory device according to claim 1 , wherein a length of the second electrode in the first direction is shorter than a length of the third insulating film in the first direction.
9. The semiconductor memory device according to claim 1 , further comprising a fourth insulating film contacting the second electrode and the third insulating film in the first direction.
10. The semiconductor memory device according to claim 9 , wherein the fourth insulating film contacts the first insulating film.
11. The semiconductor memory device according to claim 1 , further comprising:
a second semiconductor pillar provided above the substrate, the second semiconductor pillar extending in the first direction, the second semiconductor pillar being provided to be separated from the first semiconductor pillar in the third direction crossing the first and second directions;
a third electrode extending in the second direction and being provided to be separated from the first electrode in the third direction;
a fourth electrode provided between the second semiconductor pillar and the third electrode; and
a fifth insulating film provided between the second semiconductor pillar and the fourth electrode.
12. The semiconductor memory device according to claim 11 , further comprising:
a first insulating member provided between the first semiconductor pillar and the second semiconductor pillar and extending in the first and the second direction.
13. The semiconductor memory device according to claim 12 , wherein the first insulating member is an air gap.
14. The semiconductor memory device according to claim 11 , further comprising:
a third semiconductor pillar provided above the substrate, the third semiconductor pillar extending in the first direction, the third semiconductor pillar being provided to be separated from the first semiconductor pillar in the third direction;
a fifth electrode extending in the second direction and being provided to be separated from the first electrode in the third direction,
a sixth electrode provided between the third semiconductor pillar and the fifth electrode; and
a second insulating member provided between the first electrode and the fifth electrode and extending in the first and second directions,
wherein the first semiconductor pillar is provided between the second semiconductor pillar and the third semiconductor pillar.
15. The semiconductor memory device according to claim 14 , further comprising a seventh electrode extending in the third direction and being connected to the first semiconductor pillar, the second semiconductor pillar, and the third semiconductor pillar.
16. The semiconductor memory device according to claim 14 , wherein only the second insulating member is provided between the first electrode and the fifth electrode.