Transistors and methods of forming transistors
Some embodiments include a transistor having a drain region and a source region. A conductive gate is between the source and drain regions. First channel material is between the gate and the source region. The first channel material is spaced from the gate by one or more insulative materials. Second channel material is between the first channel material and the source region, and directly contacts the source region. The first and second channel materials are transition metal chalcogenide. One of the source and drain regions is a hole reservoir region and the other is an electron reservoir region. Tunnel dielectric material may be between the first and second channel materials.
1. A transistor comprising:
a source region and a drain region;
a channel material between the source and drain regions, with said channel material comprising molybdenum and sulfur; and
wherein the channel material is spaced from the drain region by an interconnecting region, and wherein said interconnecting region comprises one or both of silicon and germanium.
2. The transistor of claim 1 wherein the interconnecting region comprises germanium and has no more than 1×10 14 atoms/cm 3 of conductivity-enhancing impurity therein.
3. A transistor comprising:
a source region and a drain region;
a pair of channel regions between the source and drain regions; and
one channel region of said pair of channel regions comprising molybdenum and sulfur; the other channel region of said pair of channel regions comprising tungsten and selenium.
4. The transistor of claim 3 wherein said other channel region directly contacts the drain region.
5. The transistor of claim 3 wherein said other channel region is spaced from the drain region by an interconnecting region.
6. The transistor of claim 5 wherein the interconnecting region comprises semiconductor material.
7. The transistor of claim 5 wherein the interconnecting region comprises germanium and has no more than 1×10 14 atoms/cm 3 of conductivity-enhancing impurity therein.
8. The transistor of claim 3 wherein said one channel region comprises MoS 2 .
9. The transistor of claim 3 wherein said other channel region comprises WSe 2 .
10. The transistor of claim 3 wherein said one channel region comprises MoS 2 , and wherein said other channel region comprises WSe 2 .
11. A transistor comprising:
a source region and a drain region;
a gate between the source and drain regions;
first channel material between the gate and the source region; the first channel material being spaced from the gate by gate dielectric material;
second channel material between the first channel material and the source region, the second channel material being spaced from the first channel material by tunnel dielectric material, the tunnel dielectric material comprising one or more of hafnium oxide, aluminum oxide, zirconium oxide and silicon oxide; and
wherein the first and second channel materials are different from one another; with one of the first and second channel materials comprising sulfur, and the other of the first and second channel materials comprising selenium.
12. The transistor of claim 11 wherein said one of the first and second channel materials comprises molybdenum.
13. The transistor of claim 11 wherein said other of the first and second channel materials comprises tungsten.
14. The transistor of claim 11 wherein said one of the first and second channel materials comprises molybdenum and said other of the first and second channel materials comprises tungsten.
15. The transistor of claim 14 wherein said one of the first and second channel materials is the first channel material.
16. The transistor of claim 14 wherein said one of the first and second channel materials is the second channel material.
17. The transistor of claim 11 wherein the source and drain regions are an electron reservoir region and a hole reservoir region, respectively.
18. The transistor of claim 11 wherein the tunnel dielectric material comprises one or more oxides.
19. The transistor of claim 11 wherein the first channel material directly contacts the drain region.
20. The transistor of claim 11 wherein the first channel material does not directly contact the drain region.