Light emitting diodes, components and related methods
View Patent ↗Light emitting diode components and devices with a wall of reflective material and having improved performance and beam angle, are provided. Reflective material provided with light emitting diode devices is configured to optimize light reflectivity by altering the composition, thickness, placement and/or angle thereof. Methods of making and assembly light emitting diode components and devices with reflective materials and improved performance, are also provided.
1. A method of making a light emitting diode (LED) device, the method comprising:
attaching a die to a substrate;
applying an encapsulant on an upper surface of the die and/or substrate, wherein the encapsulant surrounds the die attached to the substrate and forms an upper surface of the encapsulant;
singulating the die attached to the substrate to form separate die components;
mounting the singulated die components to a release substrate;
applying a reflective material to surround the singulated die components, wherein an upper surface of the reflective material is substantially coplanar with the upper surface of the encapsulant; and
cutting through the reflective material to singulate the die components to provide a LED device comprising a singular die component surrounded by a wall of reflective material.
2. The method of claim 1 , wherein the release substrate comprises thermal release tape.
3. The method of claim 1 , wherein the encapsulant comprises an epoxy-based or silicone-based curable resin or other polymeric matrix.
4. The method of claim 1 , wherein the reflective material comprises TiO 2 .
5. The method of claim 1 , wherein the reflective material comprises TiO 2 and silicone, and wherein a ratio of TiO 2 :silicone in the reflective wall is about 1:1.
6. The method of claim 1 , wherein the reflective material comprises TiO 2 and silicone, and wherein a ratio of TiO 2 :silicone in the reflective material ranges between and including about 1:1 and about 3:1.
7. The method of claim 1 , wherein the reflective wall is disposed around an outside edge of the substrate.
8. The method of claim 1 , wherein the wall of reflective material has a thickness between and including about 50 micrometers (μm) to about 400 μm.
9. The method of claim 1 , wherein the reflective wall has a thickness of about 250 μm and a ratio of TiO 2 :silicone of about 1:1, wherein the reflective wall blocks substantially all light emitted from the LED and directed toward the reflective wall.
10. The method of claim 1 , wherein a beam angle of a light output from the LED device is substantially reduced compared to a LED device without the reflective wall.
11. The method of claim 10 , wherein a beam angle of the light output from the LED device is about 115° or less.
12. A method of making a light emitting diode (LED) device comprising:
attaching a die to a substrate;
applying an encapsulant on an upper surface of the die and/or the substrate;
singulating the die attached to the substrate by a first cutting through the encapsulant up to the substrate to form a channel separating a plurality of singulated die components along the substrate;
applying a reflective material to surround the plurality of singulated die components, forming a white wall; and
cutting through the reflective material and the substrate by a second cutting to singulate the plurality of singulated die components to provide a LED device surrounded by the reflective material.
13. The method of claim 12 , wherein the encapsulant comprises phosphorus.
14. The method of claim 12 , wherein the reflective material comprises TiO 2 .
15. The method of claim 12 , wherein the reflective material comprises TiO 2 and silicone, and wherein a ratio of TiO 2 :silicone in the reflective material is about 1:1.
16. The method of claim 12 , wherein the reflective material comprises TiO 2 and silicone, and wherein a ratio of TiO 2 :silicone in the reflective material ranges between and including about 1:1 and about 3:1.
17. The method of claim 12 , wherein the reflective material has a thickness between and including about 50 micrometers (μm) to about 400 μm.
18. The method of claim 12 , wherein the reflective material comprises TiO 2 and silicone, wherein the reflective material has a thickness of about 250 μm and a ratio of TiO 2 :silicone of about 1:1, and wherein the reflective material is configured to block substantially all light emitted toward the reflective wall from the LED.
19. The method of claim 12 , wherein a beam angle of a light output from the LED device is substantially reduced compared to a LED device without the reflective material.
20. The method of claim 19 , wherein a beam angle of the light output from the LED device is about 115° or less.
21. The method of claim 12 , wherein the first cutting comprises use of a blade that is wider than a blade that is used to make the second cutting.
22. The method of claim 12 , wherein an outside edge of the reflective material is substantially coplanar with an outside edge of the substrate.