Ion exchangeable glass with high crack initiation threshold
Alkali aluminosilicate glasses that are resistant to damage due to sharp impact and capable of fast ion exchange are provided. The glasses comprise at least 4 mol % P 2 O 5 and, when ion exchanged, have a Vickers indentation crack initiation load of at least about 7 kgf.
1. An alkali aluminosilicate glass comprising MgO; from 40 mol % to 70 mol % SiO 2 ; from 11 mol % to 25 mol % Al 2 O 3 ; from 4 mol % to 15 mol % P 2 O 5 ; from 13 mol % to 20 mol % Na 2 O; less than 1 mol % B 2 O 3 ; and 0 mol % K 2 O, wherein:
i. the alkali aluminosilicate glass is free of Li 2 O; and
ii. 1.3<[(P 2 O 5 +R 2 O)/M 2 O 3 ]≤2.3, where M 2 O 3 =Al 2 O 3 +B 2 O 3 and R 2 O is the sum of monovalent cation oxides present in the alkali aluminosilicate glass.
2. The alkali aluminosilicate glass of claim 1 , wherein the alkali aluminosilicate glass comprises 0 mol % B 2 O 3 .
3. The alkali aluminosilicate glass of claim 1 , wherein the monovalent cation oxides are selected from the group consisting of Na 2 O, Rb 2 O, and Cs 2 O.
4. The alkali aluminosilicate glass of claim 1 , wherein the glass satisfies:
1.5<[(P 2 O 5 +R 2 O)/M 2 O 3 ]≤2.0.
5. The alkali aluminosilicate glass of claim 1 , wherein the alkali aluminosilicate glass comprises from 50 mol % to 65 mol % SiO 2 ; from 14 mol % to 20 mol % Al 2 O 3 ; from 4 mol % to 10 mol % P 2 O 5 ; and from 14 mol % to 20 mol % Na 2 O.
6. The alkali aluminosilicate glass of claim 5 , wherein the alkali aluminosilicate glass comprises 0 mol % B 2 O 3 .
7. The alkali aluminosilicate glass of claim 1 , wherein the alkali aluminosilicate glass has a potassium/sodium interdiffusion coefficient of at least 2.4×10 −10 cm 2 /s at 410° C.
8. The alkali aluminosilicate glass of claim 7 , wherein the potassium/sodium interdiffusion coefficient is in a range from 2.4×10 −10 cm 2 /s up to 1.5×10 −9 cm 2 /s at 410° C.
9. An electronic device comprising the alkali aluminosilicate glass of claim 1 .
10. An alkali aluminosilicate glass comprising MgO; from 40 mol % to 70 mol % SiO 2 ; from 11 mol % to 25 mol % Al 2 O 3 ; from 4 mol % to 15 mol % P 2 O 5 , from 13 mol % to 20 mol % Na 2 O; less than 1 mol % B 2 O 3 ; and 0 mol % K 2 O, wherein:
i. the alkali aluminosilicate glass is ion exchanged to a depth of layer of at least 10 μm;
ii. the alkali aluminosilicate glass is free of Li 2 O; and
iii. 1.3<[(P 2 O 5 +R 2 O)/M 2 O 3 ]≤2.3, where M 2 O 3 =Al 2 O 3 +B 2 O 3 and R 2 O is the sum of monovalent cation oxides present in the alkali aluminosilicate glass.
11. The alkali aluminosilicate glass of claim 10 , wherein the glass satisfies:
1.5<[(P 2 O 5 +R 2 O)/M 2 O 3 ]≤2.0.
12. The alkali aluminosilicate glass of claim 10 , wherein the alkali aluminosilicate glass comprises
from 50 mol % to 65 mol % SiO 2 ; from 14 mol % to 20 mol % Al 2 O 3 ;
from 4 mol % to 10 mol % P 2 O 5 , from 14 mol % to 20 mol % Na 2 O.
13. The alkali aluminosilicate glass of claim 10 , wherein the alkali aluminosilicate glass has a potassium/sodium interdiffusion coefficient of at least 2.4×10 −10 cm 2 /s at 410° C.
14. The alkali aluminosilicate glass of claim 13 , wherein the potassium/sodium interdiffusion coefficient is in a range from 2.4×10 −10 cm 2 /s up to 1.5×10 −9 cm 2 /s at 410° C.
15. The alkali aluminosilicate glass of claim 10 , wherein the glass has a compressive layer extending from a surface of the glass to the depth of layer, and wherein the compressive layer is under a compressive stress of at least 300 MPa.
16. The alkali aluminosilicate glass of claim 10 , wherein the ion exchanged glass has a Vickers indentation crack initiation load of at least 7 kgf.
17. The alkali aluminosilicate glass of claim 16 , wherein the ion exchanged glass has a Vickers indentation crack initiation load of at least 12 kgf.
18. An electronic device comprising the alkali aluminosilicate glass of claim 10 .