Magnetic memory
A magnetic memory including a plurality of magnetoresistance effect elements that hold information, each including a first ferromagnetic metal layer with a fixed magnetization direction, a second ferromagnetic metal layer with a varying magnetization direction, and a non-magnetic layer sandwiched between the first and second ferromagnetic metal layers; a plurality of first control elements that control reading of the information, wherein each of the plurality of first ferromagnetic metal layers is connected to a first control element; a plurality of spin-orbit torque wiring lines that extend in a second direction intersecting with a first direction which is a stacking direction of the magnetoresistance effect elements, wherein each of the second ferromagnetic metal layers is joined to one spin-orbit torque wiring line; a plurality of second control elements that control electric current flowing through the spin-orbit torque wiring lines.
1. A magnetic memory comprising:
a plurality of magnetoresistance effect elements that hold information, each comprising a first ferromagnetic metal layer with a fixed magnetization direction, a second ferromagnetic metal layer with a varying magnetization direction, and a non-magnetic layer sandwiched between the first ferromagnetic metal layer and the second ferromagnetic metal layer;
a plurality of first control elements that control reading of the information, wherein each of the plurality of first ferromagnetic metal layers is connected to a first control element;
a plurality of spin-orbit torque wiring lines that extend in a second direction intersecting with a first direction which is a stacking direction of the magnetoresistance effect elements, wherein each of the second ferromagnetic metal layers is joined to one spin-orbit torque wiring line;
a plurality of second control elements that control electric current flowing through the spin-orbit torque wiring lines, wherein a first connection point in each of the spin-orbit torque wiring lines is connected to one second control element; and
a third control element that controls writing of the information, connected to a second connection point in each of the plurality of spin-orbit torque wiring lines.
2. A magnetic memory comprising:
a plurality of magnetoresistance effect elements that hold information, each comprising a first ferromagnetic metal layer with a fixed magnetization direction, a second ferromagnetic metal layer with a varying magnetization direction, and a non-magnetic layer sandwiched between the first ferromagnetic metal layer and the second ferromagnetic metal layer;
a first control element that controls reading of the information, connected to each of the plurality of first ferromagnetic metal layers;
a plurality of spin-orbit torque wiring lines that extend in a second direction intersecting with a first direction which is a stacking direction of the magnetoresistance effect elements, wherein each of the second ferromagnetic metal layers is joined to one spin-orbit torque wiring line;
a plurality of second control elements that control electric current flowing through the spin-orbit torque wiring lines, wherein a first connection point in each of the spin-orbit torque wiring lines is connected to one second control element; and
a plurality of third control elements that control writing of the information, wherein a second connection point in each of the spin-orbit torque wiring lines is connected to one third control element.
3. The magnetic memory according to claim 1 , wherein long axes of the magnetoresistance effect elements, on a surface perpendicular to the first direction, are oriented in the second direction.
4. The magnetic memory according to claim 2 , wherein long axes of the magnetoresistance effect elements, on a surface perpendicular to the first direction, are oriented in the second direction.
5. The magnetic memory according to claim 1 , wherein the first control elements and the second control elements are proximately arranged in a third direction intersecting with the first direction and the second direction.
6. The magnetic memory according to claim 2 , wherein the second control elements and the third control elements are proximately arranged in a third direction intersecting with the first direction and the second direction.
7. The magnetic memory according to claim 5 , wherein, in a spatial configuration that is necessary for storing one bit of the information, when a unit of a minimum processing size of length in a circuit configuration is defined as F, the length in the third direction is 8F.
8. The magnetic memory according to claim 6 , wherein, in a spatial configuration that is necessary for storing one bit of the information, when a unit of a minimum processing size of length in a circuit configuration is defined as F, the length in the third direction is 8F.
9. The magnetic memory according to claim 5 , wherein, in a spatial configuration that is necessary for storing one bit of the information, when a unit of a minimum processing size of length in a circuit configuration is defined as F, an area of a surface in the second direction and the third direction that is necessary for the circuit configuration is 16F 2 to 1056F 2 .
10. The magnetic memory according to claim 6 , wherein, in a spatial configuration that is necessary for storing one bit of the information, when a unit of a minimum processing size of length in a circuit configuration is defined as F, an area of a surface in the second direction and the third direction that is necessary for the circuit configuration is 16F 2 to 1056F 2 .
11. The magnetic memory according to claim 1 , wherein a maximum electric current flowing in the second control elements and the third control elements is greater than a maximum electric current flowing in the first control elements.
12. The magnetic memory according to claim 2 , wherein a maximum electric current flowing in the second control elements and the third control elements is greater than a maximum electric current flowing in the first control elements.
13. The magnetic memory according to claim 1 , wherein resistance values of the magnetoresistance effect elements are higher than the resistance values of spin-orbit torque wiring layers that are in contact with the magnetoresistance effect elements.
14. The magnetic memory according to claim 1 , wherein the resistances of the first control elements are lower than the resistances of the magnetoresistance effect elements.
15. The magnetic memory according to claim 1 , wherein the magnetoresistance effect elements are arranged at equidistant intervals in the second direction.
16. The magnetic memory according to claim 5 , wherein regions necessary for storing one bit of the information are proximately arranged at equidistant intervals in the second direction.
17. The magnetic memory according to claim 5 , wherein regions necessary for storing one bit of the information are proximately arranged at equidistant intervals in the third direction.
18. The magnetic memory according to claim 1 , wherein an insulating layer is provided so as to contact the magnetoresistance effect elements, and magnetic-field-providing wiring is provided so as to apply, from across the insulating layer, a magnetic field in a direction perpendicular to the magnetization direction of the magnetoresistance effect elements.
19. The magnetic memory according to claim 2 , wherein an insulating layer is provided so as to contact the magnetoresistance effect elements, and magnetic-field-providing wiring is provided so as to apply, from across the insulating layer, a magnetic field in a direction perpendicular to the magnetization direction of the magnetoresistance effect elements.