Magnetic array and method for manufacturing magnetic array
This magnetic array includes a substrate, a first unit, a second unit, a word line, a first read line, a second read line, a first gate line, a second gate line, and a source line. Each of the units includes a magnetoresistance effect element, a first switching element, and a second switching element. The magnetoresistance effect element includes a laminate and a wiring provided on the laminate. The first switching element is connected to a reference layer of the laminate. The second switching element is connected to the wiring. Each of the read lines is connected to the first switching element. The word line is connected to the second switching element. The gate lines are respectively connected to the first switching element and the second switching element of different units. The source line is connected to the wiring.
1. A magnetic array comprising:
a substrate;
a first unit;
a second unit;
a word line;
a first read line;
a second read line;
a first gate line;
a second gate line; and
a source line,
wherein each of the first unit and the second unit includes a magnetoresistance effect element, a first switching element, and a second switching element,
wherein the magnetoresistance effect element includes a laminate and a wiring provided on the laminate,
wherein the laminate includes at least a reference layer and a non-magnetic layer in order from a substrate side,
wherein the first switching element of the first unit is connected to the reference layer of the first unit and the first switching element of the second unit is connected to the reference layer of the second unit,
wherein the second switching element of the first unit is connected to the wiring of the first unit, and the second switching element of the second unit is connected to the wiring of the second unit,
wherein the first read line is connected to the first switching element of the first unit, the first read line being configured to conduct a read current when data is read from the magnetoresistance effect element,
wherein the second read line is connected to the first switching element of the second unit, the second read line being configured to conduct the read current when data is read from the magnetoresistance effect element,
wherein the word line is connected to the second switching elements of the first unit and the second unit, the word line being configured to conduct a write current when data is written to the magnetoresistance effect element,
wherein the first gate line is connected to a gate of the first switching element of the first unit and a gate of the second switching element of the second unit, the first gate line being configured to control ON/OFF operation of the first switching element and the second switching element,
wherein the second gate line is connected to a gate of the second switching element of the first unit and a gate of the first switching element of the second unit, the second gate line being configured to control ON/OFF operation of the first switching element and the second switching element, and
wherein the source line is connected to the wiring of the first unit and the wiring of the second unit, the source line being configured to conduct the read current and the write current.
2. The magnetic array according to claim 1 further comprising:
a comparison unit that is connected to the first read line and the second read line.
3. The magnetic array according to claim 1 ,
wherein a width of the gate of the first switching element is narrower than a width of the gate of the second switching element.
4. The magnetic array according to claim 1 ,
wherein the first switching element of the first unit and the second switching element of the second unit are adjacent to each other, and
wherein the second switching element of the first unit and the first switching element of the second unit are adjacent to each other.
5. The magnetic array according to claim 1 further comprising:
an insulating layer that covers a lateral side surface of the laminate; and
a first electrode and a second electrode that are provided on the insulating layer,
wherein the first electrode and the second electrode are electrically connected to each other via the wiring.
6. The magnetic array according to claim 5 ,
wherein each of the first electrode and the second electrode includes an underlayer which comes into contact with the wiring.
7. The magnetic array according to claim 6 ,
wherein the underlayer includes the same material as the wiring.
8. The magnetic array according to claim 5 further comprising:
a first via wiring that is connected to the first electrode; and
a second via wiring that is connected to the second electrode,
wherein the first via wiring is provided on an inward side of the first electrode or comes into contact with a lateral side surface of the first electrode, and
wherein the second via wiring is provided on an inward side of the second electrode or comes into contact with a lateral side surface of the second electrode.
9. The magnetic array according to claim 1 ,
wherein the laminate includes—the reference layer, the non-magnetic layer, and a free layer in order from a substrate side.
10. The magnetic array according to claim 1 ,
wherein the wiring includes a magnetic layer internally including a magnetic domain wall, and
wherein the laminate consists of the reference layer and the non-magnetic layer in order from a substrate side.