IP Library Granted Patent US 10,158,075
Granted Patent B2
US 10,158,075 · App. 15/722,856 · Granted Dec 18, 2018

Patterning devices using fluorinated compounds

Inventors: Howard E. Katz (Owings Mill, MD); Bal Mukund Dhar (Baltimore, MD)
Assignee: The Johns Hopkins University
H01L51/0018G03F7/0035G03F7/70058H01L51/0014H01L51/0023H01L51/0097H01L51/0541H01L51/52H01L51/0545H01L51/102Y10T428/24479
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Quick Facts
Patent No.
US 10,158,075
App. No.
15/722,856
Granted
Dec 18, 2018
Kind
B2
Abstract

A method for producing a spatially patterned structure includes forming a layer of a material on at least a portion of a substructure of the spatially patterned structure, forming a barrier layer of a flourinated material on the layer of material to provide an intermediate structure, and exposing the intermediate structure to at least one of a second material or radiation to cause at least one of a chemical change or a structural change to at least a portion of the intermediate structure. The barrier layer substantially protects the layer of the material from chemical and structural changes during the exposing. Substructures are produced according to this method.

Claims (13)

1. A method for producing a spatially patterned structure, comprising:

forming a layer of a material on at least a portion of a substructure of the spatially patterned structure;

forming a barrier layer of a fluorinated material on said layer of material;

forming a layer of a photoresist on said barrier layer;

exposing said photoresist to spatially patterned radiation;

developing said photoresist to substantially remove one of exposed or unexposed regions of said photoresist to provide a pattern of uncovered regions of barrier material between regions covered by photoresist; and

removing portions of said uncovered regions of barrier material using a plasma etch.

2. The method of claim 1 wherein said material comprises at least one of an organic material, a polymeric material, an organometallic material or a biological material.

3. The method of claim 1 wherein said plasma etch further removes said layer of material beneath the uncovered regions of barrier material thereby forming uncovered regions of substructure.

4. The method of claim 3 further comprising forming a layer of a second material over said regions covered by the photoresist and over said uncovered regions of substructure.

5. The method of claim 4 further comprising forming a second barrier layer of a fluorinated material over said layer of second material.

6. The method of claim 5 further comprising removing said barrier layers using a fluorinated solvent.

7. The method of claim 3 wherein said second material comprises at least one of an organic material, a polymeric material, an organometallic material or a biological material.

Assignments (2)
CONFIRMATORY LICENSE Recorded Jun 21, 2022
From: JOHNS HOPKINS UNIVERSITY
To: UNITED STATES DEPARTMENT OF ENERGY
Reel/Frame 060391/0498 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 2, 2017
From: KATZ, HOWARD E.; DHAR, BAL KUMUND
To: THE JOHNS HOPKINS UNIVERSITY
Reel/Frame 043758/0861 →
Continuity (5)
Continuation 15226411 · Aug 2, 2016
Continuation 14742894 · Jun 18, 2015
Division 12864407
Provisional Application 61123678 · Apr 10, 2008
Related Publication 20180090684A1 · Mar 29, 2018