Semiconductor device and manufacturing method thereof
A device includes a substrate, a stacked structure and a first gate stack. The stacked structure includes a plurality of first semiconductor layers and a plurality of second semiconductor layers alternately stacked over the substrate. One of the first semiconductor layers has a height greater than a height of one the second semiconductor layers. The first gate stack wraps around the stacked structure.
1. A device, comprising:
a substrate having a first region and a second region;
a stacked structure of a plurality of silicon germanium semiconductor layers and a plurality of silicon semiconductor layers alternately stacked over the first region of the substrate, one of the silicon germanium semiconductor layers having a first width and a first height, one the silicon semiconductor layers having a second width and a second height, wherein the first height is greater than the second height, and the first width is greater than the second width; and
a first gate stack wrapping around the stacked structure.
2. The device of claim 1 , further comprising:
a second gate structure over the second region of the substrate; and
a plurality of silicon semiconductor layers over the substrate and passing through the second gate structure.
3. The device of claim 2 , wherein one of the silicon semiconductor layers over the second region has a height substantially the same as the height of the one of the silicon semiconductor layers over the first region.
4. The device of claim 3 , wherein the one of the silicon semiconductor layers over the second region has a width greater than a width of the one of the silicon semiconductor layers over the first region.
5. The device of claim 2 , wherein one of the silicon semiconductor layers over the second region of the substrate has a height and a width greater than the height of the one of the silicon semiconductor layers.
6. The device of claim 2 , wherein a topmost one of the silicon semiconductor layers over the second region is higher than a topmost one of the silicon germanium semiconductor layers of the fin structure over the first region.
7. The device of claim 2 , wherein a bottommost one of the silicon germanium semiconductor layers of the fin structure over the first region is lower than a bottommost one of the silicon semiconductor layers over the second region.
8. The device of claim 1 , wherein the silicon semiconductor layers extend beyond opposite sidewalls of the first gate structure when viewed in a cross section taken along a longitudinal axis of the fin structure.
9. The device of claim 1 , further comprising:
a pair of p-type doped epitaxy structures respectively on opposite sides of the first gate structure, the silicon semiconductor layers passing through the pair of p-type doped epitaxy structures when viewed in a cross section taken along a longitudinal axis of the fin structure.
10. The device of claim 9 , wherein the silicon germanium semiconductor layers are horizontally sandwiched between the pair of p-type doped epitaxy structures when viewed in the cross section taken along the longitudinal axis of the fin structure.
11. A device, comprising:
a substrate having an n-type field effect transistor (NFET) region and a p-type field effect transistor (PFET) region;
a plurality of nanowires disposed on the NFET region of the substrate and extending in a first direction on the substrate, the nanowires being arranged in a second direction substantially perpendicular to the first direction, neighboring two of the nanowires being separated by a distance greater than a height of one of the nanowires;
a first gate structure disposed on the NFET region and wrapping around each of the nanowires, wherein each of the nanowires has a first width; and
a p-type device comprising a fin structure protruding from the PFET region of the substrate, the fin structure comprising a plurality of silicon germanium layers and a plurality of silicon layers alternately stacked over the substrate, each of the silicon germanium layers having a second width greater than a third width of each of the silicon layers, wherein the first width is greater than the second width; and
a second gate structure disposed on the PFET region and extending across the fin structure.
12. The device of claim 11 , wherein each of the silicon germanium layers has a height greater than each of the height of the one of the nanowires.
13. The device of claim 12 , wherein the height of each of the silicon germanium layers is substantially the same as the distance separating the neighboring two of the nanowires.
14. The device of claim 11 , further comprising:
a pair of n-type doped epitaxy structures respectively on opposite sides of the first gate structure, the nanowires passing through the pair of n-type doped epitaxy structures when viewed in a cross section taken along a direction perpendicular to a longitudinal axis of the first gate structure.
15. The device of claim 11 , wherein the nanowires extend beyond opposite sidewalls of the first gate structure when viewed in a cross section taken along a direction perpendicular to a longitudinal axis of the first gate structure.
16. The device of claim 11 , wherein a top surface of a topmost one of the silicon germanium layers of the fin structure is lower than a top surface of a topmost one of the nanowires.
17. A transistor comprising:
a substrate;
a plurality of nanowires formed over the substrate;
a first gate extending across the nanowires;
a fin structure extending upwardly from a top surface of the substrate and comprising a plurality of silicon channel layers and a plurality of silicon germanium channel layers alternately stacked over the substrate, each of the silicon germanium channel layers having a width greater than a width of each of the silicon channel layers, and a topmost one of the nanowires is higher than a topmost one of the silicon germanium channel layers; and
a second gate structure extending across the fin structure, wherein each of the second channel layers has a maximum dimension along a direction perpendicular to the substrate when viewed in a cross section taken along a longitudinal axis of the gate structure.
18. The transistor of claim 17 , wherein the silicon channel layers extend beyond opposite edges of each of the silicon germanium channel layers when viewed in a cross section taken along a longitudinal axis of the fin structure.
19. The transistor of claim 17 , wherein each of the nanowire has a width greater than the width of each of the silicon germanium channel layers.
20. The transistor of claim 17 , wherein each of the silicon germanium channel layers having a height greater than a height of each of the silicon channel layers.