Nanosheet field effect transistors with partial inside spacers
A method of forming a nanosheet device, including forming a channel stack on a substrate, where the channel stack includes at least one nanosheet channel layer and at least one sacrificial release layer, forming a stack cover layer on at least a portion of the channel stack, forming a dummy gate on at least a portion of the stack cover layer, wherein at least a portion of the at least one nanosheet channel layer and at least one sacrificial release layer is exposed on opposite sides of the dummy gate, removing at least a portion of the at least one sacrificial release layer on each side of the dummy gate to form a sacrificial supporting rib, and forming an inner spacer layer on exposed portions of the at least one nanosheet channel layer and at least one sacrificial supporting rib.
1. A nanosheet device, comprising:
a gate structure on a substrate;
a source/drain region on each of the opposite sides of the gate structure;
at least one nanosheet channel layer extending between the source/drain region on each of the opposite sides of the gate structure, wherein the at least one nanosheet channel layer is in physical and electrical contact with the source/drain region on each of the opposite sides of the gate structure; and
four cavity fills between the substrate and a bottom nanosheet channel layer of the at least one nanosheet channel layers, wherein one of the four cavity fills is located at each of the four corners of the bottom nanosheet channel layer.
2. The nanosheet device of claim 1 , wherein the gate structure includes a gate dielectric layer wrapped around the at least one nanosheet channel layer.
3. The nanosheet device of claim 2 , wherein the gate structure includes a separate work function layer wrapped around each of the at least one nanosheet channel layer.
4. The nanosheet device of claim 1 , wherein the at least one nanosheet channel layer is silicon.
5. The nanosheet device of claim 1 , wherein the source/drain regions are n-type source/drain regions.
6. The nanosheet device of claim 1 , wherein each of the four cavity fills is separated from the other cavity fills by at least a portion of the gate structure.
7. The nanosheet device of claim 1 , further comprising an interlayer dielectric on the source/drain regions on opposite sides of the gate structure.
8. The nanosheet device of claim 1 , further comprising two nanosheet channel layers and eight cavity fills, wherein four of the eight cavity fills are located between the two nanosheet channel layers with one cavity fill located at each of four corners of the two nanosheet channel layers.
9. The nanosheet device of claim 8 , wherein the eight cavity fills are made of a material selected from the group consisting of silicon nitride (SiN), silicon oxide (SiO), high-k metal oxide, low-K oxide, and combinations thereof.
10. A nanosheet device, comprising:
four cavity fills on a substrate;
a nanosheet channel layer on top of the four cavity fills, wherein one of the four cavity fills is located at each of four corners of the nanosheet channel layer on the same level;
a source/drain region on each of the opposite sides of the nanosheet channel layer, wherein the source/drain regions are in electrical contact with the nanosheet channel layer; and
a gate dielectric layer wrapped around the nanosheet channel layer.
11. The nanosheet device of claim 10 , wherein the nanosheet channel layer has a thickness in the range of about 2 nm to about 10 nm.
12. The nanosheet device of claim 10 , wherein the nanosheet channel layer and substrate are silicon (Si).
13. The nanosheet device of claim 10 , wherein each of the four cavity fills has a thickness in the range of about 5 nm to about 20 nm.
14. The nanosheet device of claim 10 , wherein each of the four cavity fills is in physical contact with one of the source/drain regions.
15. The nanosheet device of claim 10 , further comprising a work function layer on the gate dielectric layer.
16. A nanosheet device, comprising:
a first set of four cavity fills on a substrate;
a first nanosheet channel layer on top of the first set of four cavity fills, wherein one of the first set of four cavity fills is located at each of the four corners on the same level of the first nanosheet channel layer;
a second set of four cavity fills on top of the first nanosheet channel layer, wherein one of the second set of four cavity fills is located at each of the four corners of the first nanosheet channel layer on the same level;
a second nanosheet channel layer on top of the second set of four cavity fills;
a source/drain region on each of the opposite sides of the first and second nanosheet channel layers, wherein the source/drain regions are in electrical contact with the first and second nanosheet channel layers; and
a gate dielectric layer wrapped around each of the first and second nanosheet channel layers.
17. The nanosheet device of claim 16 , further comprising a work function layer on the gate dielectric layer, wherein at least a portion of the work function layer is between the first nanosheet channel layer and the second nanosheet channel layer.
18. The nanosheet device of claim 17 , further comprising a gate fill layer on at least a portion of the work function layer.
19. The nanosheet device of claim 18 , wherein each of the first and second set of cavity fills has a thickness in the range of about 5 nm to about 20 nm.
20. The nanosheet device of claim 19 , wherein the gate dielectric layer has a thickness in the range of about 1 nm to about 5 nm.