Devices and methods of forming unmerged epitaxy for FinFet device
Devices and methods of growing unmerged epitaxy for fin field-effect transistor (FinFet) devices are provided. One method includes, for instance: obtaining a wafer having at least one source, at least one drain, and at least one fin; etching to expose at least a portion of the at least one fin; forming at least one sacrificial gate structure; and forming a first layer of an epitaxial growth on the at least one fin. One device includes, for instance: a wafer having at least one source, at least one drain, and at least one fin; a first layer of an epitaxial growth on the at least one fin; at least one second layer of an epitaxial growth superimposing the first layer of an epitaxial growth; and a first contact region over the at least one source and a second contact region over the at least one drain.
1. A structure comprising:
a device having at least one source, at least one drain, and at least one fin on a semiconductor layer;
a first dielectric layer over the device and positioned around at least a portion of the at least one fin;
a first layer of epitaxial growth on the at least one fin, the first layer of epitaxial growth including a first top surface, a first side surface extending away from the first top surface in a first direction at an angle toward the semiconductor layer, and a second side surface extending away from the first top surface in a second direction at an angle toward the semiconductor layer;
second dielectric layer over the first dielectric layer, the second dielectric layer positioned around at least a portion of the first layer of epitaxial growth and at least a portion of the at least one fin;
a second layer of epitaxial growth superimposing the first layer of epitaxial growth;
a first contact region over the at least one source; and
a second contact region over the at least one drain,
wherein the second interlayer dielectric layer contacts the first side surface of the first layer of epitaxial growth and the second side surface of the first layer of epitaxial growth.
2. The structure of claim 1 , wherein the first layer of epitaxial growth substantially takes on a shape of a diamond.
3. The structure of claim 1 , wherein the second layer of epitaxial growth substantially takes on a shape of at least one of a diamond, a square, a rectangle, a pentagon, a trapezoid, and a polygon.
4. The structure of claim 1 , wherein the second layer of epitaxial growth is one second layer of epitaxial growth.
5. The structure of claim 4 , wherein the second layer of epitaxial growth extends away from the first top surface of the first layer of epitaxial growth.
6. The structure of claim 5 , wherein the second layer of epitaxial growth comprises:
a second top surface;
a third side surface extending away from the second top surface in a first direction at an angle toward the semiconductor layer; and
a fourth side surface extending away from the second top surface in a second direction at an angle toward the semiconductor layer.
7. The structure of claim 6 , wherein the second layer of epitaxial growth further comprises:
a fifth side surface extending from the third side surface of the second layer of epitaxial growth to a top of the first side surface of the first layer of epitaxial growth; and
a sixth side surface extending from the fourth side surface of the second layer of epitaxial growth to a top of the second side surface of the first layer of epitaxial growth.
8. The structure of claim 7 , wherein the first contact region or the second contact region contacts the second top surface, the third side surface, the fourth side surface, the fifth side surface, and the sixth side surface of the second layer of epitaxial growth.
9. The structure of claim 8 , wherein the second top surface, the third side surface, the fourth side surface, the fifth side surface, and the sixth side surface of the second layer of epitaxial growth are positioned above the second dielectric layer.
10. The structure of claim 1 , further comprising:
a third layer of epitaxial growth.
11. The structure of claim 10 , wherein the second layer of epitaxial growth extends away from the first top surface of the first layer of epitaxial growth, and the second layer of epitaxial growth comprises:
a second top surface;
a third side surface extending away from the second top surface in a first direction at an angle toward the semiconductor layer;
a fourth side surface extending away from the second top surface in a second direction at an angle toward the semiconductor layer;
a fifth side surface extending from the third side surface of the second layer of epitaxial growth to a top of the first side surface of the first layer of epitaxial growth; and
a sixth side surface extending from the fourth side surface of the second layer of epitaxial growth to a top of the second side surface of the first layer of epitaxial growth.
12. The structure of claim 11 , wherein the third layer of epitaxial growth extends away from the second top surface of the second layer of epitaxial growth, and the third layer of epitaxial growth comprises:
a third top surface;
a seventh side surface extending away from the third top surface in a first direction at an angle toward the semiconductor layer; and
an eighth side surface extending away from the second top surface in a second direction at an angle toward the semiconductor layer.
13. The structure of claim 12 , wherein the third layer of epitaxial growth further comprises:
a ninth side surface extending from the seventh side surface of the third layer of epitaxial growth to a top of the third side surface of the second layer of epitaxial growth; and
a tenth side surface extending from the eighth side surface of the third layer of epitaxial growth to a top of the fourth side surface of the second layer of epitaxial growth.
14. The structure of claim 13 , wherein the first contact region or the second contact region contacts the third side surface, the fourth side surface, the fifth side surface, and the sixth side surface of the second layer of epitaxial growth and the third top surface, seventh side surface, eighth side surface, ninth side surface, and tenth side surface of the third layer of epitaxial growth.
15. The structure of claim 14 , wherein the third top surface, seventh side surface, eighth side surface, ninth side surface, and tenth side surface of the third layer of epitaxial growth are positioned above the second dielectric layer.