Transistor substrate, and organic light emitting display panel including the same having a coupled driving gate and switching channel
Disclosed are a transistor substrate, an organic light emitting display panel including the same, a method of manufacturing the transistor substrate, and an organic light emitting display device including the organic light emitting display panel, in which a driving transistor and a switching transistor are provided and each include an oxide semiconductor of which both ends are covered by an insulation layer, and a gate of the driving transistor and a gate of the switching transistor are provided on different layers.
1. A transistor substrate comprising:
a substrate;
a switching channel on the substrate;
a driving channel on the substrate;
a gate insulation layer covering the switching channel and the driving channel;
a switching gate on the gate insulation layer and overlapping a switching active part which includes an oxide semiconductor and constitutes the switching channel;
a first insulation layer covering the switching gate and the gate insulation layer;
a driving gate on the first insulation layer and overlapping a driving active part which includes an oxide semiconductor and constitutes the driving channel;
a second insulation layer covering the driving gate and the first insulation layer;
a first electrode on the second insulation layer and connected to a first conductor part constituting the switching channel and the driving gate; and
a second electrode on the second insulation layer and connected to a second conductor part constituting the switching channel.
2. The transistor substrate of claim 1 , wherein the driving gate comprises:
a first gate electrode on the first insulation layer and overlapping a third conductor part constituting the driving channel, the first gate electrode including a transparent conductive material; and
a second gate electrode connected to the first electrode, disposed on the first gate electrode and overlapping the driving active part.
3. The transistor substrate of claim 2 , wherein the first gate electrode comprises a first area overlapping the second gate electrode and a second area overlapping the third conductor part.
4. The transistor substrate of claim 2 , wherein the first gate electrode contacts the second gate electrode.
5. The transistor substrate of claim 2 , wherein the driving active part has a width the same as a width of the second gate electrode.
6. The transistor substrate of claim 2 , further comprising a first storage capacitance between the third conductor part of the driving channel and the first gate electrode.
7. The transistor substrate of claim 1 , wherein the switching active part has a width the same as a width of the switching gate.
8. The transistor substrate of claim 1 , wherein the gate insulation layer is disposed on the substrate and covers the switching channel and the driving channel.
9. The transistor substrate of claim 2 , further comprising a third electrode connected to the third conductor part of the driving channel, disposed on the second insulation layer and overlapping the first gate electrode.
10. The transistor substrate of claim 1 , wherein the switching channel and the driving channel are disposed on the same layer.
11. An organic light emitting display panel comprising:
a substrate;
a switching channel on the substrate;
a driving channel on the substrate;
a gate insulation layer covering the switching channel and the driving channel;
a switching gate on the gate insulation layer and overlapping a switching active part which includes an oxide semiconductor and constitutes the switching channel;
a first insulation layer covering the switching gate and the gate insulation layer;
a driving gate on the first insulation layer and overlapping a driving active part which includes an oxide semiconductor and constitutes the driving channel;
a second insulation layer covering the driving gate and the first insulation layer;
a first electrode on the second insulation layer and connected to the driving gate and the switching channel through a first conductor part;
a second electrode on the second insulation layer and connected to the switching channel through a second conductor part;
a passivation layer covering the first electrode, the second electrode, and the second insulation layer; and
an organic light emitting diode (OLED) disposed on the passivation layer having an anode connected to the third conductor part of the driving channel.
12. The organic light emitting display panel of claim 11 , wherein the driving gate comprises:
a first gate electrode on the first insulation layer and overlapping a third conductor part of the driving channel, the first gate electrode including a transparent conductive material; and
a second gate electrode connected to the first electrode, disposed on the first gate electrode and overlapping the driving active part.
13. The transistor substrate of claim 12 , wherein the first gate electrode comprises a first area overlapping the second gate electrode and a second area overlapping the third conductor part.
14. The transistor substrate of claim 12 , wherein the first gate electrode contacts the second gate electrode.
15. The transistor substrate of claim 12 , wherein the driving active part has a width the same as a width of the second gate electrode.
16. The transistor substrate of claim 11 , further comprising a first storage capacitance between the third conductor part of the driving channel and the first gate electrode.
17. The transistor substrate of claim 11 , wherein the switching active part has a width the same as a width of the switching gate.
18. The transistor substrate of claim 11 , wherein the gate insulation layer is disposed on the substrate and covers the switching channel and the driving channel.
19. The transistor substrate of claim 11 , wherein the switching channel and the driving channel are disposed on the same layer.
20. The organic light emitting display panel of claim 11 , further comprising a third electrode connected to the driving channel through a third conductor part and disposed on the second insulation layer, wherein the third electrode is connected to the anode, and the third electrode overlaps the third conductor part of the driving channel.