Thin film transistor, method of manufacturing the thin film transistor, and display apparatus including the thin film transistor
A display apparatus can include a first thin film transistor including a first active layer including polycrystalline silicon, a first gate electrode overlapping the first active layer with a first gate insulation layer therebetween, and a first source electrode and a first drain electrode connected to the first active layer, a first interlayer insulation layer disposed on the first gate electrode, a second thin film transistor including a second active layer including an oxide semiconductor, a second gate electrode overlapping the second active layer with a second gate insulation layer therebetween, and a second source electrode and a second drain electrode connected to the second active layer, and a second interlayer insulation layer disposed on the first gate electrode, the second gate electrode, and the second gate insulation layer. Also, the second gate insulation layer and the second interlayer insulation layer comprise a dopant for doping the second active layer.
1 . A display apparatus comprising:
a first thin film transistor including a first active layer including polycrystalline silicon, a first gate electrode overlapping the first active layer with a first gate insulation layer therebetween, and a first source electrode and a first drain electrode each connected to the first active layer;
a first interlayer insulation layer disposed on the first gate electrode;
a second thin film transistor including a second active layer including an oxide semiconductor, a second gate electrode overlapping the second active layer with a second gate insulation layer therebetween, and a second source electrode and a second drain electrode each connected to the second active layer; and
a second interlayer insulation layer disposed on the first gate electrode, the second gate electrode, and the second gate insulation layer,
wherein the second gate insulation layer and the second interlayer insulation layer comprise a dopant for doping the second active layer,
wherein the second active layer comprises:
a second channel region overlapping the second gate electrode;
a second source region disposed at one side of the second channel region and connected to the second source electrode; and
a second drain region disposed at another side of the second channel region and connected to the second source electrode,
wherein the second source region comprises a first conductivity-providing part disposed at the one side of the second channel region and a first offset part disposed between the first conductivity-providing part and the one side of the second channel region,
wherein the second drain region comprises a second conductivity-providing part disposed at the other side of the second channel region and a second offset part disposed between the second conductivity-providing part and the other side of the second channel region,
wherein the first conductivity-providing part, the second conductivity-providing part, the first offset part, and the second offset part comprise the dopant,
wherein the first offset part has a concentration gradient of the dopant linearly increasing in a direction from the second channel region to the first conductivity-providing part, and
wherein the second offset part has a concentration gradient of the dopant linearly increasing in a direction from the second channel region to the second conductivity-providing part.
2 . The display apparatus of claim 1 , wherein the dopant doped on the second active layer comprises at least one of boron (B), phosphorous (P), fluorine (F), and hydrogen (H).
3 . The display apparatus of claim 1 , wherein a concentration of the dopant of each of the first conductivity-providing part and the second conductivity-providing part is higher than a concentration of the dopant of each of the first offset part and the second offset part.
4 . The display apparatus of claim 1 , wherein the first gate insulation layer covers an entire top surface of the first active layer facing the first gate electrode, and the second gate insulation layer covers an entire top surface of the second active layer facing the second gate electrode.
5 . The display apparatus of claim 1 , further comprising a substrate,
wherein the first thin film transistor and the second thin film transistor is disposed on the substrate,
the first active layer and the first gate electrode are disposed between the substrate and the first interlayer insulation layer, and
the first interlayer insulation layer is disposed between the second active layer and the first gate electrode.
6 . The display apparatus of claim 1 , wherein when a width of the second channel is L 1 and a width of the first offset part is L 2 , the second thin film transistor satisfies Equation 1 below:
L
1
×
L
2
×
1
/
η1
≥
1
[
Equation
1
]
where η1 satisfies a relationship of 0.5 μm 2 ≤η1≤1.5 μm 2 .
7 . The display apparatus of claim 1 , wherein a resistivity of the first offset part is lower than a resistivity of the second channel region and is higher than a resistivity of the first conductivity-providing part when the second thin film transistor is turned off, and
a resistivity of the second offset part is lower than the resistivity of the second channel region and is higher than a resistivity of the second conductivity-providing part when the second thin film transistor is turned off.
8 . The display apparatus of claim 1 , wherein a resistivity of the first offset part is higher than a resistivity of the second channel region and is higher than a resistivity of the first conductivity-providing part when the second thin film transistor is turned on, and
a resistivity of the second offset part is higher than the resistivity of the second channel region and is higher than a resistivity of the second conductivity-providing part when the second thin film transistor is turned on.
9 . The display apparatus of claim 1 , further comprising a second buffer layer disposed between the first interlayer insulation layer and the second active layer,
wherein the dopant is doped on the second buffer layer.
10 . The display apparatus of claim 9 , wherein, in a region overlapping the first conductivity-providing part, a dopant concentration of the first conductivity-providing part is higher than a dopant concentration of the second gate insulation layer and a dopant concentration of the second buffer layer, and
in a region overlapping the second conductivity-providing part, a dopant concentration of the second conductivity-providing part is higher than the dopant concentration of the second gate insulation layer and the dopant concentration of the second buffer layer.
11 . The display apparatus of claim 9 , wherein, in a region overlapping the first conductivity-providing part, a dopant concentration of the second buffer layer is higher than a dopant concentration of the first conductivity-providing part and a dopant concentration of the second gate insulation layer, and
in a region overlapping the second conductivity-providing part, the dopant concentration of the second buffer layer is higher than a dopant concentration of the second conductivity-providing part and the dopant concentration of the second gate insulation layer.
12 . The display apparatus of claim 1 , wherein the second active layer further comprises:
a first oxide semiconductor layer on the first interlayer insulation layer; and
a second oxide semiconductor layer on the first oxide semiconductor layer.
13 . The display apparatus of claim 1 , wherein the first source electrode, the first drain electrode, the second source electrode and the second drain electrode are disposed on a same layer.