Integrated photodetector waveguide structure with alignment tolerance
An encapsulated integrated photodetector waveguide structures with alignment tolerance and methods of manufacture are disclosed. The method includes forming a waveguide structure bounded by one or more shallow trench isolation (STI) structure(s). The method further includes forming a photodetector fully landed on the waveguide structure.
1. A sensor structure, comprising:
a photodetector with a window exposing a portion of a waveguide structure; and
an encapsulating material of a single material fully encapsulating and surrounding the photodetector, wherein the encapsulating material extends across and directly contacts an uppermost surface of the photodetector, and the encapsulating material is within divots or recesses in shallow trench isolation (STI) structures.
2. The sensor structure of claim 1 , wherein the waveguide structure is tapered.
3. The sensor structure of claim 1 , wherein the waveguide structure is continuously tapered.
4. The sensor structure of claim 3 , wherein the photodetector is continuously tapered.
5. The sensor structure of claim 4 , wherein the continuously tapered photodetector is fully landed on a planar surface of the continuously tapered waveguide structure.
6. The sensor structure of claim 4 , wherein the continuously tapered photodetector is formed as a double tapered photodetector.
7. The sensor structure of claim 6 , wherein the double tapered photodetector includes a taper at its input end portion.
8. The sensor structure of claim 6 , wherein the continuously tapered waveguide structure is formed from silicon material or silicon on insulator material.
9. The sensor structure of claim 1 , wherein at least a portion of the encapsulating material encapsulating lateral sides of the photodetector land on the waveguide structure.
10. The sensor structure of claim 1 , wherein the photodetector contacts the waveguide structure through a hole in the encapsulating material.
11. The sensor structure of claim 1 , wherein the encapsulating material is over the divots or recesses in the STI structures.
12. The sensor structure of claim 11 , wherein the divots or recesses are at a junction between an insulator material and an active semiconductor layer.
13. The sensor structure of claim 1 , wherein the encapsulating material is nitride or oxide.
14. The sensor structure of claim 1 , wherein the photodetector is without a tapered input end.
15. The sensor structure of claim 14 , wherein the photodetector without the tapered input end is fully landed on a planar surface of the waveguide structure.
16. The sensor structure of claim 1 , wherein the waveguide structure includes a narrow portion, a tapered portion, and a wide portion.
17. The sensor structure of claim 1 , wherein dimensions of the narrow portion, the tapered portion, and the wide portion depend in an intensity and wavelength of light.
18. The sensor structure of claim 1 , wherein a lowermost surface of the photodetector is on and contacting an upper surface of the waveguide structure.
19. A sensor structure, comprising:
a photodetector with a window exposing a portion of a waveguide structure; and
an encapsulating material of a single material fully encapsulating and surrounding the photodetector, wherein the encapsulating material directly contacts an uppermost surface of the photodetector, and the waveguide structure and the STI structures have coplanar uppermost surfaces across which the encapsulating material extends.
20. A sensor structure, comprising:
a photodetector with a window exposing a portion of a waveguide structure; and
an encapsulating material of a single material fully encapsulating and surrounding the photodetector, wherein the encapsulating material is within divots or recesses in shallow trench isolation (STI) structures, and the encapsulating material extends across and directly contacts an uppermost surface of the waveguide structure.