Tilted synthetic antiferromagnet polarizer/reference layer for STT-MRAM bits
View Patent ↗Embodiments disclosed herein generally relate to a multilayer magnetic device, and specifically to a spin-torque transfer magnetoresistive random access memory (STT-MRAM) device which provides for a reduction in the amount of current required for switching individual bits. As such, a polarizing reference layer consisting of a synthetic antiferromagnet (SAF) structure with an in-plane magnetized ferromagnet film indirectly exchange coupled to a magnetic film with perpendicular magnetic anisotropy (PMA) is disclosed. By tuning the exchange coupling strength and the PMA, the layers of the SAF may both be canted such that either may be used as a tilted polarizer for either an in-plane free layer or a free layer with PMA.
1. A multilayer magnetic device, comprising:
a reference layer structure, comprising:
a perpendicular magnetic anisotropy polarizing layer;
a nonmagnetic metal layer disposed on the perpendicular magnetic anisotropy polarizing layer; and
a perpendicular magnetic anisotropy ferromagnet layer disposed on the metal layer, wherein at least one of the perpendicular magnetic anisotropy polarizing layer or the perpendicular magnetic anisotropy ferromagnet layer is tilted away from a respective equilibrium axis wherein the perpendicular magnetic anisotropy polarizing layer has a thickness of between about 0.5 nm and about 10 nm.
2. A multilayer magnetic device, comprising:
a reference layer structure, comprising:
a perpendicular magnetic anisotropy polarizing layer;
a nonmagnetic metal layer disposed on the perpendicular magnetic anisotropy polarizing layer; and
a perpendicular magnetic anisotropy ferromagnet layer disposed on the metal layer, wherein at least one of the perpendicular magnetic anisotropy polarizing layer or the perpendicular magnetic anisotropy ferromagnet layer is tilted away from a respective equilibrium axis wherein the perpendicular magnetic anisotropy polarizing layer maintains a saturation magnetization (M s ) greater than about 500 emu/cm 3 .
3. A multilayer magnetic device, comprising:
a reference layer structure, comprising:
a perpendicular magnetic anisotropy polarizing layer;
a nonmagnetic metal layer disposed on the perpendicular magnetic anisotropy polarizing layer; and
a perpendicular magnetic anisotropy ferromagnet layer disposed on the metal layer, wherein at least one of the perpendicular magnetic anisotropy polarizing layer or the perpendicular magnetic anisotropy ferromagnet layer is tilted away from a respective equilibrium axis wherein the perpendicular magnetic anisotropy polarizing layer maintains a saturation magnetization (M s ) between about 550 emu/cm 3 and about 1300 emu/cm 3 .
4. A multilayer magnetic device, comprising:
a reference layer structure, comprising:
a perpendicular magnetic anisotropy polarizing layer;
a nonmagnetic metal layer disposed on the perpendicular magnetic anisotropy polarizing layer; and
a perpendicular magnetic anisotropy ferromagnet layer disposed on the metal layer, wherein at least one of the perpendicular magnetic anisotropy polarizing layer or the perpendicular magnetic anisotropy ferromagnet layer is tilted away from a respective equilibrium axis wherein the perpendicular magnetic anisotropy ferromagnet layer has a thickness of between about 2 nm and about 8 nm.
5. A multilayer magnetic device, comprising:
a reference layer structure, comprising:
a perpendicular magnetic anisotropy polarizing layer;
a nonmagnetic metal layer disposed on the perpendicular magnetic anisotropy polarizing layer; and
a perpendicular magnetic anisotropy ferromagnet layer disposed on the metal layer, wherein at least one of the perpendicular magnetic anisotropy polarizing layer or the perpendicular magnetic anisotropy ferromagnet layer is tilted away from a respective equilibrium axis wherein the perpendicular magnetic anisotropy ferromagnet layer maintains a saturation magnetization (M s ) greater than about 500 emu/cm 3 .
6. A multilayer magnetic device, comprising:
a reference layer structure, comprising:
a perpendicular magnetic anisotropy polarizing layer;
a nonmagnetic metal layer disposed on the perpendicular magnetic anisotropy polarizing layer; and
a perpendicular magnetic anisotropy ferromagnet layer disposed on the metal layer, wherein at least one of the perpendicular magnetic anisotropy polarizing layer or the perpendicular magnetic anisotropy ferromagnet layer is tilted away from a respective equilibrium axis wherein the perpendicular magnetic anisotropy ferromagnet layer maintains an anisotropy energy between about 1×10 5 erg/cm 3 and about 5×10 7 erg/cm 3 .
7. A multilayer magnetic device, comprising:
a reference layer structure, comprising:
a perpendicular magnetic anisotropy polarizing layer;
a nonmagnetic metal layer disposed on the perpendicular magnetic anisotropy polarizing layer; and
a perpendicular magnetic anisotropy ferromagnet layer disposed on the metal layer, wherein at least one of the perpendicular magnetic anisotropy polarizing layer or the perpendicular magnetic anisotropy ferromagnet layer is tilted away from a respective equilibrium axis wherein the nonmagnetic metal layer comprises ruthenium.
8. A multilayer magnetic device, comprising:
a reference layer structure, comprising:
a perpendicular magnetic anisotropy polarizing layer;
a nonmagnetic metal layer disposed on the perpendicular magnetic anisotropy polarizing layer; and
a perpendicular magnetic anisotropy ferromagnet layer disposed on the metal layer, wherein at least one of the perpendicular magnetic anisotropy polarizing layer or the perpendicular magnetic anisotropy ferromagnet layer is tilted away from a respective equilibrium axis wherein the nonmagnetic metal layer maintains an exchange coupling strength between about 0.1 erg/cm 2 and about 1 erg/cm 2 .
9. A multilayer magnetic device, comprising:
a reference layer structure, comprising:
a perpendicular magnetic anisotropy polarizing layer;
a nonmagnetic metal layer disposed on the perpendicular magnetic anisotropy polarizing layer; and
a perpendicular magnetic anisotropy ferromagnet layer disposed on the metal layer, wherein at least one of the perpendicular magnetic anisotropy polarizing layer or the perpendicular magnetic anisotropy ferromagnet layer is tilted away from a respective equilibrium axis wherein the metal layer has a thickness of between about 2 angstroms and about 10 angstroms.
10. A multilayer magnetic device, comprising:
a reference layer structure, comprising:
a perpendicular magnetic anisotropy polarizing layer;
a nonmagnetic metal layer disposed on the perpendicular magnetic anisotropy polarizing layer; and
a perpendicular magnetic anisotropy ferromagnet layer disposed on the metal layer, wherein at least one of the perpendicular magnetic anisotropy polarizing layer or the perpendicular magnetic anisotropy ferromagnet layer is tilted away from a respective equilibrium axis wherein the perpendicular magnetic anisotropy polarizing layer comprises one of Ni, Fe, Co, or an alloy comprising a combination of thereof together with B, Ge, Pt and/or Mn or superlattices of Co and Pt, Co and Pd, Co and Ni, or combinations and mixtures thereof, and wherein the perpendicular magnetic anisotropy ferromagnet layer is a single ferromagnet comprising Ni, Fe, Co, or an alloy comprising a combination of thereof together with B, Ge, Pt and/or Mn or superlattices of Co and Pt, Co and Pd, Co and Ni, or combinations and mixtures thereof.
11. The multilayer magnetic device of claim 10 , wherein the perpendicular magnetic anisotropy polarizing layer has a thickness of between about 0.5 nm and about 10 nm.
12. The multilayer magnetic device of claim 10 , wherein the perpendicular magnetic anisotropy polarizing layer maintains a saturation magnetization (M s ) greater than about 500 emu/cm 3 .
13. The multilayer magnetic device of claim 10 , wherein the perpendicular magnetic anisotropy polarizing layer maintains a saturation magnetization (M s ) between about 550 emu/cm 3 and about 1300 emu/cm 3 .
14. The multilayer magnetic device of claim 10 , wherein the perpendicular magnetic anisotropy ferromagnet layer has a thickness of between about 2 nm and about 8 nm.
15. The multilayer magnetic device of claim 10 , wherein the perpendicular magnetic anisotropy ferromagnet layer maintains a saturation magnetization (M s ) greater than about 500 emu/cm 3 .
16. The multilayer magnetic device of claim 10 , wherein the perpendicular magnetic anisotropy ferromagnet layer maintains an anisotropy energy between about 1×10 5 erg/cm 3 and about 5×10 7 erg/cm 3 .
17. The multilayer magnetic device of claim 10 , wherein the nonmagnetic metal layer comprises ruthenium.
18. The multilayer magnetic device of claim 10 , wherein the nonmagnetic metal layer maintains an exchange coupling strength between about 0.1 erg/cm 2 and about 1 erg/cm 2 .
19. The multilayer magnetic device of claim 10 , wherein the metal layer has a thickness of between about 2 angstroms and about 10 angstroms.