Apparatuses and methods for forming multiple decks of memory cells

1. A method comprising:

forming a first deck having alternating first conductor materials and first dielectric materials and a hole containing materials extending through the first conductor materials and the first dielectric materials;

removing a portion of at least one of the materials from a portion of the hole;

enlarging the portion of the hole to form an enlarged portion of the hole;

forming a sacrificial material in the enlarged portion of the hole; and

forming a second deck having alternating second conductor materials and second dielectric materials over the first deck.

2. The method of claim 1 , further comprising:

forming a second hole through the second conductor materials and the second dielectric materials, such that at least a portion of the sacrificial material is exposed through the second hole;

removing the sacrificial material; and

forming a third hole through the first and second decks, such that the third hole includes a combination of the second hole and the hole, including the enlarged hole portion of the hole.

3. The method of claim 2 , further comprising:

forming a tunneling material on sidewalls of the third hole; and

forming a channel material adjacent the tunneling material.

4. The method of claim 3 , further comprising:

forming a third dielectric material in the hole, the third dielectric material being surrounded by at least the channel material.

5. The method of claim 1 , further comprising:

forming a second hole through the second conductor materials and second dielectric materials, such that at least a portion of the sacrificial material is exposed at the second hole;

removing the sacrificial material;

forming a tunneling material on sidewalls of the second hole; and

forming a channel material adjacent the tunneling material and contacting an additional channel material in the hole.

6. The method of claim 5 , further comprising:

forming a third dielectric material in the hole, the third dielectric material being surrounded by at least the channel material adjacent the tunneling material.

7. The method of claim 1 , wherein the sacrificial material includes aluminum.

8. A method comprising:

forming a first deck having alternating first conductor materials and first dielectric materials and a first hole containing materials extending through the first conductor materials and the first dielectric materials, the materials in the first hole include a tunneling material on sidewalls of the first hole and an additional material adjacent the tunneling material;

removing a portion of the additional material from a portion of the first hole;

enlarging the portion of the first hole to form an enlarged portion of the first hole;

forming a sacrificial material in the enlarged portion of the first hole;

forming alternating levels of second conductor materials and second dielectric materials over the first deck;

forming a second hole to expose at least a portion of the sacrificial material in the first hole;

recessing the second conductor materials adjacent the second hole to form recesses;

forming a dielectric material on sidewalls of the second hole and on sidewalls of the recesses;

forming charge-storage material in the recesses and adjacent the dielectric material;

removing the sacrificial material;

forming an additional tunneling material in the second hole, such that the additional tunneling material contacts the tunneling material in the first hole;

removing a remaining portion of the additional material adjacent the tunneling material in first hole; and

forming a channel material on sidewalls of the first and second holes.

9. The method of claim 8 , wherein the tunneling material contained in the first hole includes an oxide of silicon, and the additional material contained in the first hole includes polysilicon.

10. The method of claim 8 , wherein the sacrificial material includes aluminum oxide.