IP Library Assignment 050709/0965
Patent Assignment
Reel/Frame 050709/0965

Release of Security Interest

Recorded: 2019-10-10 Pages: 16
Assignor
Assignee
MICRON TECHNOLOGY, INC.
8000 S FEDERAL WAY, BOISE, IDAHO, 83707
Covered Properties (202)
Memory Arrays
Application: 15/895,882 →
Publication: US US20180175145A1
Packaged Semiconductor Components Having Substantially Rigid Support Members and Methods of Packaging Semiconductor Components
Application: 15/936,715 →
Publication: US US20180211896A1
Packaged Semiconductor Assemblies and Methods for Manufacturing Such Assemblies
Application: 15/885,381 →
Publication: US US20180158778A1
Methods for Isolating Portions of a Loop of Pitch-Multiplied Material and Related Structures
Application: 15/925,418 →
Publication: US US20180211868A1
Switched Interface Stacked-Die Memory Architecture
Application: 15/849,331 →
Publication: US US20180114587A1
Methods, Apparatus, and Systems to Repair Memory
Application: 15/850,817 →
Publication: US US20180114588A1
Memory Devices and Methods for Managing Error Regions
Application: 15/927,679 →
Publication: US US20180374557A1
Solid State Lighting Devices with Dielectric Insulation and Methods of Manufacturing
Application: 15/910,460 →
Publication: US US20180190862A1
Analyzing Data Using a Hierarchical Structure
Application: 15/728,216 →
Publication: US US20180096213A1
Methods of Accessing Memory Cells, Methods of Distributing Memory Requests, Systems, and Memory Controllers
Application: 15/918,178 →
Publication: US US20180300079A1
Apparatus and Methods Including Source Gates
Application: 15/721,007 →
Publication: US US20180122481A1
Stack Of Horizontally Extending And Vertically Overlapping Features, Methods Of Forming Circuitry Components, And Methods Of Forming An Array Of Memory Cells
Application: 15/900,188 →
Publication: US US20180175059A1
Memory Devices, Semiconductor Devices and Related Methods
Application: 15/885,086 →
Publication: US US20180174960A1
Configurable Operating Mode Memory Device and Methods of Operation
Application: 15/945,316 →
Publication: US US20180225056A1
Memory Cells, Semiconductor Devices Including the Memory Cells, and Methods of Operation
Application: 15/915,861 →
Publication: US US20180198063A1
Write Command Overlap Detection
Application: 15/906,315 →
Publication: US US20180188965A1
Conductive Interconnect Structures Incorporating Negative Thermal Expansion Materials and Associated Systems, Devices, and Methods
Application: 15/889,120 →
Publication: US US20180174902A1
Apparatus Providing Simplified Alignment of Optical Fiber in Photonic Integrated Circuits
Application: 15/936,033 →
Publication: US US20180224614A1
Semiconductor Device Assembly with Through-Package Interconnect and Associated Systems, Devices, and Methods
Application: 15/941,611 →
Publication: US US20180226387A1
Apparatuses and Methods for Memory Testing and Repair
Application: 15/910,889 →
Publication: US US20180190367A1
Resistance Variable Element Methods and Apparatuses
Application: 15/837,896 →
Publication: US US20180166138A1
Setting a Default Read Signal Based on Error Correction
Application: 15/913,575 →
Publication: US US20180197620A1
Magnetoresistive Structures, Semiconductor Devices, and Related Systems
Application: 15/952,507 →
Publication: US US20180233657A1
Methods and Apparatuses for Providing a Program Voltage Responsive to a Voltage Determination
Application: 15/910,375 →
Publication: US US20180197583A1
Apparatuses and Methods for Performing Logical Operations Using Sensing Circuitry
Application: 15/899,187 →
Publication: US US20180190334A1
Methods and Apparatuses Including an Active Area of a Tap Intersected by a Boundary of a Well
Application: 15/845,729 →
Publication: US US20180122808A1
Methods of Forming Structures and Methods of Decreasing Defect Density
Application: 15/889,598 →
Publication: US US20180247815A1
Charge Pumps and Methods of Operating Charge Pumps
Application: 15/927,150 →
Publication: US US20180212516A1
Apparatuses and Methods for Comparing Data Patterns in Memory
Application: 15/941,896 →
Publication: US US20180226127A1
Testing Impedance Adjustment
Application: 15/904,660 →
Publication: US US20180191528A1
Apparatuses and Methods for Forming Multiple Decks of Memory Cells
Application: 15/849,242 →
Publication: US US20180138196A1
Methods of Forming Electronic Devices Including Magnetic Cell Core Structures
Application: 15/939,939 →
Publication: US US20180226570A1
Phase Change Memory Stack with Treated Sidewalls
Application: 15/882,666 →
Publication: US US20190088867A9
Virtual Address Table
Application: 15/911,786 →
Publication: US US20180196757A1
Memory Arrays and Methods of Fabricating Integrated Structures
Application: 15/924,143 →
Publication: US US20180204851A1
Method for Manufacturing a Semiconductor Device Assembly with Through-Mold Cooling Channel Formed in Encapsulant
Application: 15/938,305 →
Publication: US US20180219002A1
Multidimensional Contiguous Memory Allocation
Application: 15/925,248 →
Publication: US US20180210660A1
Multiplication Operations in Memory
Application: 15/905,083 →
Publication: US US20180189031A1
Interconnect Structures with Intermetallic Palladium Joints and Associated Systems and Methods
Application: 15/905,086 →
Publication: US US20180190620A1
Methods of Forming Photonic Device Structures and Electronic Devices
Application: 15/908,355 →
Publication: US US20180188647A1
Sequential Write and Sequential Write Verify in Memory Device
Application: 15/849,299 →
Publication: US US20180137917A1
Apparatus Configured to Program Memory Cells Using an Intermediate Level for Multiple Data States
Application: 15/933,498 →
Publication: US US20180211714A1
Drain Select Gate Formation Methods and Apparatus
Application: 15/808,468 →
Publication: US US20180069015A1
Semiconductor Device Having Through-Silicon-via and Methods of Forming the Same
Application: 15/910,136 →
Publication: US US20180190571A1
Offset Compensation for Ferroelectric Memory Cell Sensing
Application: 15/844,154 →
Publication: US US20180108393A1
Apparatuses and Methods for Selective Determination of Data Error Repair
Application: 15/901,949 →
Publication: US US20180181464A1
Apparatuses and Methods for Data Transfer from Sensing Circuitry to a Controller
Application: 15/906,872 →
Publication: US US20180188996A1
Non-Volatile Memory Module Architecture to Support Memory Error Correction
Application: 15/861,374 →
Publication: US US20180129450A1
Boosted Channel Programming of Memory
Application: 15/928,856 →
Publication: US US20180308551A1
Semiconductor Device Structures Including Stair Step Structures, and Related Semiconductor Devices
Application: 15/906,366 →
Publication: US US20180190587A1
Plate Defect Mitigation Techniques
Application: 15/913,413 →
Publication: US US20180261302A1
Stacked Semiconductor Dies with Selective Capillary Under Fill
Application: 15/901,799 →
Publication: US US20180182738A1
Integrated Structures Comprising Channel Material Extending into source material
Application: 15/945,215 →
Publication: US US20180226427A1
Methods of Forming Conductive Structures Including Stair Step or Tiered Structures Having Conductive Portions
Application: 15/916,575 →
Publication: US US20180204799A1
Apparatuses and Methods for Refresh Control
Application: 15/945,343 →
Publication: US US20180226121A1
Memory Device Configuration Commands
Application: 15/939,459 →
Publication: US US20180217773A1
Conductive Structures, Wordlines and Transistors
Application: 15/895,587 →
Publication: US US20180175039A1
Power Delivery Circuitry
Application: 15/900,553 →
Publication: US US20180174622A1
Compensating for Variations in Selector Threshold Voltages
Application: 15/951,006 →
Publication: US US20180294025A1
Dynamic Reference Voltage Determination
Application: 15/844,145 →
Publication: US US20180158502A1
SILICON CHALCOGENATE PRECURSORS COMPRISING A CHEMICAL FORMULA OF Si(XR1)nR24-n AND METHODS OF FORMING THE SILICON CHALCOGENATE PRECURSORS
Application: 15/913,218 →
Publication: US US20180197735A1
Apparatus and Methods of Operating Memory for Negative Gate to Body Conditions
Application: 15/935,126 →
Publication: US US20180211711A1
Memory Device Including Current Generator Plate
Application: 15/844,007 →
Publication: US US20180108385A1
Apparatuses Having Body Connection Lines Coupled with Access Devices
Application: 15/895,928 →
Publication: US US20180374855A1
Wireless Devices and Systems Including Examples of Mixing Coefficient Data Specific to a Processing Mode Selection
Application: 15/941,532 →
Publication: US US20180227158A1
Memory Device Including Multiple Gate-Induced Drain Leakage Current Generator Circuits
Application: 15/911,910 →
Publication: US US20180211710A1
Array Of Elevationally-Extending Transistors And A Method Used In Forming An Array Of Elevationally-Extending Transistors
Application: 15/900,537 →
Publication: US US20180337258A1
Memory Cells Comprising A Programmable Field Effect Transistor Having A Reversibly Programmable Gate Insulator
Application: 15/944,270 →
Publication: US US20180226428A1
Structure of Integrated Circuitry and a Method of Forming a Conductive Via
Application: 15/926,505 →
Publication: US US20180323142A1
Hybrid Memory Drives, Computer System, and Related Method for Operating a Multi-Mode Hybrid Drive
Application: 15/933,820 →
Publication: US US20180210655A1
Apparatuses and Methods for Partial Bit De-Emphasis
Application: 15/941,964 →
Publication: US US20180269875A1
Identifying Asynchronous Power Loss
Application: 15/911,490 →
Publication: US US20180196705A1
Methods Of Forming An Array Comprising Pairs Of Vertically Opposed Capacitors And Arrays Comprising Pairs Of Vertically Opposed Capacitors
Application: 15/912,826 →
Publication: US US20180197869A1
Through-Core Via
Application: 15/946,139 →
Publication: US US20190311987A1
Assemblies Comprising Memory Cells and Select Gates
Application: 15/926,427 →
Publication: US US20190198065A1
Methods and Systems for Averaging Impedance Calibration
Application: 15/901,737 →
Transistors And Arrays Of Elevationally-Extending Strings Of Memory Cells
Application: 15/903,307 →
Memory Arrays, and Methods of Forming Memory Arrays
Application: 15/933,218 →
Publication: US US20190198510A1
Memory Arrays
Application: 15/948,639 →
Publication: US US20190198520A1
Pseudo-Non-Volatile Memory Cells
Application: 62/641,057 →
Systems and Methods for Generating Stagger Delays in Memory Devices
Application: 15/924,757 →
Publication: US US20190259440A1
Finer Grain Dynamic Random Access Memory (Dram)
Application: 62/518,575 →
Systems and Methods for Improving Output Signal Quality in Memory Devices
Application: 15/925,399 →
Publication: US US20190259445A1
Systems and Methods for Conserving Power in Signal Quality Operations for Memory Devices
Application: 15/924,857 →
Publication: US US20190259441A1
Methods for Acquiring Planar View Stem Images of Device Structures
Application: 62/650,529 →
Differential Amplifier Schemes for Sensing Memory Cells
Application: 15/920,171 →
Generating and Using Invertible, Shortened Bose-Chaudhuri-Hocquenghem Codewords
Application: 62/628,821 →
Integrated Circuit Constructions Comprising Memory And Methods Used In The Formation Of Integrated Circuitry Comprising Memory
Application: 15/928,410 →
Publication: US US20190296028A1
Post-Packaging Repair of Redundant Rows
Application: 15/948,585 →
Semiconductor Device Providing an Output in Response to a Read Command or a Mode-Register Read Command
Application: 15/882,607 →
Publication: US US20190237126A1
Mitigating a Stable Threshold Voltage of a Memory Cell at a Storage System
Application: 62/628,198 →
Techniques for Clock Signal Jitter Generation
Application: 15/948,422 →
Mitigating an Undetectable Error When Retrieving Critical Data During Error Handling
Application: 62/628,203 →
Semiconductor Device Performing Row Hammer Refresh Operation
Application: 15/884,192 →
Publication: US US20190237132A1
Background Stable Threshold Voltage Mitigation of a Memory Cell at a Storage System
Application: 62/628,682 →
Providing Data to a New Memory Cell at a Storage System Based on an Unsuccessful Error Correction Operation
Application: 62/628,706 →
Power Management Integrated Circuit (PMIC) Master/Slave Functionality
Application: 15/919,102 →
Publication: US US20190278496A1
Power Management Integrated Circuit with Dual Power Feed
Application: 15/918,627 →
Power Management Integrated Circuit with Bleed Circuit Control
Application: 15/918,960 →
Publication: US US20190280600A1
Low Power State Implementation in a Power Management Integrated Circuit
Application: 15/919,053 →
Publication: US US20190278363A1
Power Management Integrated Circuit Load Switch Driver with Dynamic Biasing
Application: 15/919,020 →
Publication: US US20190279688A1
Hardware-Based Power Management Integrated Circuit Register File Write Protection
Application: 15/919,026 →
Publication: US US20190278516A1
Power Management Integrated Circuit with In Situ Non-Volatile Programmability
Application: 15/919,036 →
Publication: US US20190278362A1
Storage Backed Memory Package Save Trigger
Application: 62/627,988 →
Firmware Update in a Storage Backed Memory Package
Application: 62/627,969 →
Status Management in Storage Backed Memory Package
Application: 62/627,949 →
Key Encryption Handling
Application: 62/628,123 →
Host Timeout Csave
Application: 62/628,040 →
Partial Save of Memory
Application: 62/628,157 →
Self Refresh Retry
Application: 62/628,089 →
Black Box Data Recorder with Artificial Intelligence Processor in Autonomous Driving Vehicle
Application: 15/938,504 →
Publication: US US20190302766A1
Methods of Forming Integrated Circuitry
Application: 15/923,864 →
Publication: US US20190288033A1
Clock Characteristic Determination
Application: 15/952,569 →
Publication: US US20190317683A1
Re-Routing Autonomous Vehicles Using Dynamic Routing and Memory Management
Application: 15/919,038 →
Publication: US US20190277643A1
Power Management, Dynamic Routing and Memory Management for Autonomous Driving Vehicles
Application: 15/933,260 →
Publication: US US20190294173A1
Re-Routing Autonomous Vehicles Using Dynamic Routing and Memory Management for Border Security Purposes
Application: 15/926,661 →
Publication: US US20190293437A1
Output Impedance Calibration for Signaling
Application: 15/934,663 →
Resource Sharing among Vehicle Applications Connected via a Bus
Application: 15/920,240 →
Publication: US US20190286607A1
Health Characteristics of a Memory Device
Application: 62/644,925 →
Self Refresh Bypass
Application: 62/628,135 →
Predictive Data Orchestration in Two Tier Memory Systems
Application: 62/626,347 →
Architecture for Storage Devices Using Embedded Media Controllers
Application: 62/626,527 →
Prioritized Memory Storage Based on Data Stream Characteristics
Application: 62/626,544 →
Input/Output (IO) Acceleration with Message Passing Interface (MPI) Semantics with Persistent Memory
Application: 62/626,419 →
Synchronous Memory Bus Access to Storage Media and Dram Using an SRAM Buffer
Application: 62/626,577 →
CPU Cache Flushing to Persistent Memory with Reduced Instructions
Application: 62/626,565 →
Memory Virtualization for Two Tier Memory Systems
Application: 62/626,491 →
Remote Direct Memory Access (RDMA) in Two Tier Memory Systems
Application: 62/626,523 →
Artificial Neural Network Integrity Verification
Application: 62/636,214 →
DDR5 Memory Device
Application: 62/631,760 →
Optimization of Communication and Data Access in Systems having Persistent Data Storage Devices
Application: 62/629,628 →
Personalization of a Vehicle Based on User Settings
Application: 15/927,916 →
Publication: US US20190291719A1
Interface For Data Communication Between Chiplets on an Interposer of a System On A Chip (SOC)
Application: 62/625,520 →
Memory Devices Configured to Provide External Regulated Voltages
Application: 62/635,429 →
Nand Data Placement Schema
Application: 62/644,248 →
Clustered Parity for Nand Data Placement Schema
Application: 62/644,282 →
Structure and Methods of Forming the Structure
Application: 15/948,740 →
Publication: US US20180226196A1
Methods and Apparatuses Including an Asymmetric Assist Device
Application: 15/863,324 →
Publication: US US20180130536A1
Programming Memories with Multi-Level Pass Signal
Application: 15/907,826 →
Publication: US US20180190347A1
Integrated Structures and Methods of Forming Vertically-Stacked Memory Cells
Application: 15/893,380 →
Publication: US US20180166464A1
Buffer Operations in Memory
Application: 15/940,351 →
Publication: US US20180217782A1
Apparatuses and Methods Including Memory Access in Cross Point Memory
Application: 15/905,317 →
Publication: US US20180182457A1
Apparatuses and Methods to Control Body Potential in 3D Non-Volatile Memory Operations
Application: 15/849,267 →
Publication: US US20180114581A1
Microelectronic Package Structures Including Redistribution Layers
Application: 15/910,360 →
Publication: US US20180190531A1
Methods of Patterning a Target Layer
Application: 15/876,386 →
Publication: US US20180144937A1
Memory Including a Selector Switch on a Variable Resistance Memory Cell
Application: 15/918,770 →
Publication: US US20180277599A1
Methods and Related Devices for Operating a Memory Array
Application: 15/827,795 →
Publication: US US20180095687A1
Adaptive Rate Compression Hash Processor
Application: 15/943,227 →
Publication: US US20180225298A1
Stacked Semiconductor Die Assemblies with Die Substrate Extensions
Memory Array Page Table Walk
Pre-Writing Memory Cells of an Array
Apparatuses Having Body Connection Lines Coupled with Access Devices
Wireless Devices and Systems Including Examples of Full Duplex Transmission
Obfuscation-Enhanced Memory Encryption
Apparatuses Comprising Semiconductor Dies in Face-to-Face Arrangements
Semiconductor Devices with Back-Side Coils for Wireless Signal and Power Coupling
Semiconductor Devices with Through-Substrate Coils for Wireless Signal and Power Coupling
Apparatus and Methods for in Data Path Compute Operations
Efficient Utilization of Memory Die Area
Semiconductor Device Assemblies with Electrically Functional Heat Transfer Structures
Self-Reference for Ferroelectric Memory
Garbage Collection
Operation of Mixed Mode Blocks
Memory Management
Inductors with Through-Substrate via Cores
Memory Arrays, and Methods of Forming Memory Arrays
Multiple Plate Line Architecture for Multideck Memory Array
Tiered Error Correction Code (Ecc) Operations in Memory
Integrated Structures, Nand Memory Arrays, and Methods of Forming Integrated Structures
Methods of Sketch-Based Memory Management and Memory Devices Utilizing the Same
Systems and Methods for Array Reset Mode Operation
Apparatuses and Methods for Compute in Data Path
Methods of Bit-Flagged Sketch-Based Memory Management and Memory Devices Utilizing the Same
Nand Memory Arrays, and Methods of Forming Nand Memory Arrays
Selective Error Rate Information for Multidimensional Memory
Memory Cells and Integrated Structures
Apparatuses and Methods for in-Memory Operations
Apparatuses and Methods for in-Memory Operations
Apparatuses and Methods for in-Memory Data Switching Networks
Error Correction Code (Ecc) Operations in Memory for Providing Redundant Error Correction
Memory Protection Based on System State
Wireless Devices and Systems Including Examples of Configuration Modes for Baseband Units and Remote Radio Heads
Semiconductor Devices Having Discretely Located Passivation Material, and Associated Systems and Methods
Transaction Identification
Kvs Tree
Merge Tree Garbage Metrics
Merge Tree Modifications for Maintenance Operations
Stream Selection for Multi-Stream Storage Devices
Apparatuses and Methods for Operating Neural Networks
Apparatuses and Methods for Configurable Command and Data Input Circuits for Semiconductor Memories
Three Dinemsional Memory Array
Methods and Apparatuses for Determining Real-Time Location Information of Rfid Devices
Methods and Apparatuses for Processing Multiple Communications Signals with a Single Integrated Circuit Chip
Methods of Forming Semiconductor Device Structures Including Linear Structures Substantially Aligned with Other Structures
Memory Protocol with Programmable Buffer and Cache Size
Arrays of Elevationally-Extending Strings of Memory Cells and Methods of Forming Memory Arrays
Memory Devices and Methods Which May Facilitate Tensor Memory Access
Apparatus and Method to Switch Configurable Logic Units
Secure Memory Arrangements
Multi-Die Inductors with Coupled Through-Substrate via Cores
3D Interconnect Multi-Die Inductors with Through-Substrate via Cores
Method and Apparatus for Precharge and Refresh Control
Related Assignments (7)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest Feb 27, 2018
From: PALMER, DAVID A.
To: MICRON TECHNOLOGY, INC.
Reel/Frame 045051/0201 →
Assignment of Assignor's Interest Mar 2, 2018
From: SCOTT D. SCHELLHAMMER
To: MICRON TECHNOLOGY, INC.
Reel/Frame 045091/0630 →
Assignment of Assignor's Interest Mar 28, 2018
From: SCHWAB, MATT E.; BROOKS, J. MICHAEL; CORISIS, DAVID J.
To: MICRON TECHNOLOGY, INC.
Reel/Frame 045372/0846 →
Supplement No. 8 to Patent Security Agreement May 7, 2018
From: MICRON TECHNOLOGY, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
Reel/Frame 046084/0955 →
Assignment of Assignor's Interest Jun 25, 2018
From: KALAVADE, PRANAV; RAJWADE, SHANTANU R.
To: MICRON TECHNOLOGY, INC.
Reel/Frame 046196/0633 →
Security Interest Jul 13, 2018
From: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 047540/0001 →
Release of Security Interest Nov 12, 2019
From: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
Reel/Frame 051028/0001 →