Silicon chalcogenate precursors comprising a chemical formula of si(XR1)nR24-n and methods of forming the silicon chalcogenate precursors
A silicon chalcogenate precursor comprising the chemical formula of Si(XR 1 ) n R 2 4-n , where X is sulfur, selenium, or tellurium, R 1 is hydrogen, an alkyl group, a substituted alkyl group, an alkoxide group, a substituted alkoxide group, an amide group, a substituted amide group, an amine group, a substituted amine group, or a halogen group, each R 2 is independently hydrogen, an alkyl group, a substituted alkyl group, an alkoxide group, a substituted alkoxide group, an amide group, a substituted amide group, an amine group, a substituted amine group, or a halogen group, and n is 1, 2, 3, or 4. Methods of forming the silicon chalcogenate precursor, methods of forming silicon nitride, and methods of forming a semiconductor structure are also disclosed.
1. A silicon chalcogenate precursor comprising:
the chemical formula of Si(XR 1 ) n R 2 4-n , where X is sulfur, selenium, or tellurium, R 1 is hydrogen, a substituted alkyl group, an alkoxide group, a substituted alkoxide group, an amide group, a substituted amide group, an amine group, a substituted amine group, or a halogen group, each R 2 is independently a substituted alkyl group, an alkoxide group, a substituted alkoxide group, an amide group, a substituted amide group, an amine group, a substituted amine group, or a halogen group, at least one R 2 is different from R 1 , and n is 1, 2, or 3, wherein when R 1 is hydrogen, n is 2, 3, or 4.
2. The silicon chalcogenate precursor of claim 1 , wherein the silicon chalcogenate precursor comprises:
and each of R 3 and R 4 is independently a substituted alkyl group, an alkoxide group, a substituted alkoxide group, an amide group, a substituted amide group, or a halide group.
3. The silicon chalcogenate precursor of claim 2 , wherein R 1 comprises a halogen atom indirectly bonded to the silicon atom and at least one of R 2 , R 3 , or R 4 comprises a halogen atom directly or indirectly bonded to the silicon atom.
4. The silicon chalcogenate precursor of claim 2 , wherein R 1 comprises a halogen atom indirectly bonded to the silicon atom and each of R 2 , R 3 , and R 4 comprises a halogen atom directly or indirectly bonded to the silicon atom.
5. The silicon chalcogenate precursor of claim 1 , wherein the silicon chalcogenate precursor comprises Si(XR 1 )(R 2 )(R 3 )(R 4 ), Si(XR 1 )(XR 2 )(R 3 )(R 4 ), Si(XR 1 )(R 2 )(XR 3 )(R 4 ), Si(XR 1 )(XR 2 )(R 3 )(XR 4 ), Si(XR 1 )(XR 2 )(XR 3 )(R 4 ), Si(XR 1 )(R 2 )(XR 3 )(XR 4 ), or Si(XR 1 )(XR 2 )(XR 3 )(XR 4 ) and each of R 3 and R 4 is independently a substituted alkyl group, an alkoxide group, a substituted alkoxide group, an amide group, a substituted amide group, or a halide group.
6. The silicon chalcogenate precursor of claim 5 , where each X is the same.
7. The silicon chalcogenate precursor of claim 5 , where each X is different.
8. The silicon chalcogenate precursor of claim 1 , wherein the silicon chalcogenate precursor comprises Si(XR 1 )(XR 2 )(XR 3 )(XR 4 ), where X is sulfur or tellurium, each X is the same, and each of R 3 and R 4 is independently a substituted alkyl group, an alkoxide group, a substituted alkoxide group, an amide group, a substituted amide group, or a halide group.
9. The silicon chalcogenate precursor of claim 1 , wherein the silicon chalcogenate precursor comprises at least one halogen atom.
10. The silicon chalcogenate precursor of claim 1 , wherein R 1 comprises a halogen atom indirectly bonded to the silicon atom and R 2 comprises a halogen atom directly or indirectly bonded to the silicon atom.
11. A method of forming a silicon chalcogenate precursor, comprising:
reacting an organolithium reagent with a chalcogen source compound to produce an organolithium chalcogen compound; and
reacting the organolithium chalcogen compound with a silicon halide compound to form a silicon chalcogenate precursor comprising the chemical formula of Si(XR 1 ) n R 2 4-n , where X is sulfur, selenium, or tellurium, R 1 is hydrogen, a substituted alkyl group, an alkoxide group, a substituted alkoxide group, an amide group, a substituted amide group, an amine group, a substituted amine group, or a halogen group, each R 2 is independently a substituted alkyl group, an alkoxide group, a substituted alkoxide group, an amide group, a substituted amide group, an amine group, a substituted amine group, or a halogen group, at least one R 2 is different from R 1 , and n is 1, 2, or 3, wherein when R 1 is hydrogen, n is 2, 3, or 4.
12. The method of claim 11 , wherein reacting an organolithium reagent with a chalcogen source compound comprises reacting methyllithium with elemental selenium to form lithium methylselenide.
13. The method of claim 11 , wherein reacting an organolithium reagent with a chalcogen source compound comprises reacting the organolithium reagent with a chalcogen source compound comprising sulfur, selenium, tellurium, or combinations thereof.
14. The method of claim 11 , wherein reacting the organolithium chalcogen compound with a silicon halide compound comprises reacting the organolithium chalcogen compound and the silicon halide compound at below room temperature.
15. The method of claim 11 , wherein reacting the organolithium chalcogen compound with a silicon halide compound comprises reacting the organolithium chalcogen compound and the silicon halide compound at below 0° C.
16. The method of claim 11 , wherein reacting the organolithium chalcogen compound with a silicon halide compound comprises reacting the organolithium chalcogen compound and the silicon halide compound at below −76° C.
17. The method of claim 11 , wherein reacting the organolithium chalcogen compound with a silicon halide compound comprises reacting the organolithium chalcogen compound with a compound of silicon and fluorine, a compound of silicon and chlorine, a compound of silicon and bromine, or a compound of silicon and iodine.
18. The method of claim 11 , wherein reacting the organolithium chalcogen compound with a silicon halide compound comprises reacting the organolithium chalcogen compound with silicon tetrachloride to form the silicon chalcogenate precursor.
19. A method of forming a silicon chalcogenate precursor, comprising:
reacting a Grignard reagent with a chalcogen source compound to produce an organometallic chalcogen compound; and
reacting the organometallic chalcogen compound with a silicon halide compound to form a silicon chalcogenate precursor comprising the chemical formula of Si(XR 1 ) n (R 2 ) 4-n , where X is sulfur, selenium, or tellurium, R 1 is hydrogen, an alkyl group, a substituted alkyl group, an alkoxide group, a substituted alkoxide group, an amide group, a substituted amide group, an amine group, a substituted amine group, or a halogen group, R 2 is independently hydrogen, an alkyl group, a substituted alkyl group, an alkoxide group, a substituted alkoxide group, an amide group, a substituted amide group, an amine group, a substituted amine group, or a halogen group, n is 1, 2, 3, or 4, R 1 comprises a halogen atom indirectly bonded to the silicon atom, and at least one R 2 comprises a halogen atom indirectly or directly bonded to the silicon atom.
20. A silicon chalcogenate precursor comprising:
the chemical formula of Si(XR 1 ) n R 2 4-n , where X is sulfur, selenium, or tellurium, R 1 is hydrogen, an alkyl group, a substituted alkyl group, an alkoxide group, a substituted alkoxide group, an amide group, a substituted amide group, an amine group, a substituted amine group, or a halogen group, R 2 is independently hydrogen, an alkyl group, a substituted alkyl group, an alkoxide group, a substituted alkoxide group, an amide group, a substituted amide group, an amine group, a substituted amine group, or a halogen group, n is 1, 2, 3, or 4, R 1 comprises a halogen atom indirectly bonded to the silicon atom, and at least one R 2 comprises a halogen atom directly or indirectly bonded to the silicon atom.
21. The silicon chalcogenate precursor of claim 20 , wherein only one R 1 comprises a halogen atom indirectly bonded to the silicon atom.
22. A silicon chalcogenate precursor comprising:
the chemical formula of Si(XR 1 )(R 2 )(R 3 )(R 4 ), where X is sulfur, selenium, or tellurium, R 1 is hydrogen, an alkyl group, a substituted alkyl group, an alkoxide group, a substituted alkoxide group, an amide group, a substituted amide group, an amine group, a substituted amine group, or a halogen group, R 2 , R 3 , and R 4 are independently hydrogen, an alkyl group, a substituted alkyl group, an alkoxide group, a substituted alkoxide group, an amide group, a substituted amide group, an amine group, a substituted amine group, or a halogen group, and at least one of R 2 , R 3 , or R 4 comprises a halogen atom directly bonded to the silicon atom.
23. A silicon chalcogenate precursor comprising:
the chemical formula of Si(XR 1 )(R 2 )(R 3 )(R 4 ), where X is sulfur, selenium, or tellurium, R 1 is hydrogen, an alkyl group, a substituted alkyl group, an alkoxide group, a substituted alkoxide group, an amide group, a substituted amide group, an amine group, a substituted amine group, or a halogen group, R 2 , R 3 , and R 4 are independently hydrogen, an alkyl group, a substituted alkyl group, an alkoxide group, a substituted alkoxide group, an amide group, a substituted amide group, an amine group, a substituted amine group, or a halogen group, and each of R 2 , R 3 , or R 4 comprises a halogen atom directly bonded to the silicon atom.