Methods and apparatuses including an active area of a tap intersected by a boundary of a well

1. An apparatus comprising:

a first well having a first type of conductivity formed within a semiconductor structure having a second type of conductivity, wherein the first well is a P-well, and wherein the semiconductor structure in which the first well is formed is an N-well; and

a tap to the first well comprising an active area having a lightly doped area of the first type of conductivity outside a boundary of the first well and a more heavily doped area of the first type of conductivity outside a boundary of the semiconductor structure,

wherein the more heavily doped area comprises a P+ area, the lightly doped area comprises a P− area, the more heavily doped area is separated from the lightly doped area by the first well, and the P+ area is separated from the P− area by the P-well.

2. The apparatus of claim 1 , comprising a contact over the more heavily doped area.

3. The apparatus of claim 1 , wherein the lightly doped area is outside the boundary of the first well and over the semiconductor structure, and the more heavily doped area is outside the boundary of the semiconductor structure and over the first well.

4. The apparatus of claim 3 , comprising a contact over the more heavily doped area and not over the lightly doped area.

5. The apparatus of claim 1 , comprising:

a memory array comprising a plurality of memory cells; and

support circuitry coupled to the memory array, the support circuitry comprising a semiconductor device comprising the first well and the semiconductor structure.

6. The apparatus of claim 5 , wherein the memory array and the support circuitry are included in a memory device.

7. The apparatus of claim 6 , further comprising a processor coupled to the memory device.

8. The apparatus of claim 1 , wherein the first well creates an electric field peak at the edge of the first well within lightly doped area of the active area to increase breakdown voltage of the apparatus.

9. The apparatus of claim 1 , comprising an isolation area, wherein the lightly doped area is between the contact and the isolation area.

10. The apparatus of claim 1 , wherein the active area is over a junction between the lightly doped area and the more heavily doped area.

11. The apparatus of claim 10 , wherein the junction comprises a substantially vertical junction.

12. The apparatus of claim 10 , wherein the junction comprises a substantially vertical junction, and

wherein the contact is entirely over the more heavily doped area.

13. The apparatus of claim 10 , wherein the contact is entirely over the more heavily doped area.

14. The apparatus of claim 10 , wherein the contact is not over the lightly doped area.

15. An apparatus comprising:

a P-well formed within an N-well of a semiconductor structure; and

a tap to the P-well comprising an active area having a P− area outside a boundary of the P-well and a P+ area outside a boundary of the N-well, wherein the P+ area is separated from the P− area by the P-well.

16. The apparatus of claim 15 , comprising a contact over the P+ area and not over the P− area.

17. The apparatus of claim 15 , comprising:

a memory device comprising support circuitry, the support circuitry comprising a semiconductor device, the semiconductor device comprising the semiconductor structure.

18. An apparatus comprising:

an N-well formed within a P-well of a semiconductor structure; and

a tap to the N-well comprising an active area having an N− area outside a boundary of the N-well and an N+ area outside a boundary of the P-well, wherein the N+ area is separated from the N− area by the N-well.

19. The apparatus of 18 , comprising a contact over the P+ area and not over the P− area.

20. The apparatus of claim 18 , comprising:

a memory device comprising support circuitry, the support circuitry comprising a semiconductor device, the semiconductor device comprising the semiconductor structure.