Semiconductor device assembly with through-package interconnect and associated systems, devices, and methods
Methods for making semiconductor devices are disclosed herein. A method configured in accordance with a particular embodiment includes forming a spacer material on an encapsulant such that the encapsulant separates the spacer material from an active surface of a semiconductor device and at least one interconnect projecting away from the active surface. The method further includes molding the encapsulant such that at least a portion of the interconnect extends through the encapsulant and into the spacer material. The interconnect can include a contact surface that is substantially co-planar with the active surface of the semiconductor device for providing an electrical connection with the semiconductor device.
1. A semiconductor device assembly, comprising:
an encapsulant that includes an outer surface;
a semiconductor device at least partially encased within the encapsulant and having an active surface and a passivation layer at the active surface;
a redistribution network at the active surface, the redistribution network including a first bond pad having a first upper surface, the passivation layer having a second upper surface, the first upper surface being elevated from the second upper surface; and
at least one interconnect attached to the active surface of the semiconductor device, wherein at least a portion of the interconnect extends beyond the outer surface of the encapsulant, and wherein the portion of the interconnect includes a contact surface electrically connected to the active surface of the semiconductor device.
2. The semiconductor device assembly of claim 1 wherein the semiconductor device and the encapsulant form at least a portion of a first semiconductor device package, and wherein the semiconductor device assembly further comprises a second semiconductor device package attached to the first semiconductor device package, wherein the second semiconductor device package is electrically coupled to the first semiconductor device package via the portion of the interconnect that extends beyond the outer surface of the encapsulant.
3. The semiconductor device assembly of claim 2 wherein the portion of the interconnect that extends beyond the outer surface of the encapsulant comprises a first interconnect, and wherein the semiconductor device assembly further comprises a second interconnect that fits with a planform shape defined by the first semiconductor device package.
4. The semiconductor device assembly of claim 2 , further comprising a solder ball between the first and second semiconductor device packages and the portion of the interconnect that extends beyond the outer surface of the encapsulant.
5. The semiconductor device assembly of claim 1 , further comprising a spacer material covering the outer surface of the encapsulant and the contact surface of the portion of the interconnect.
6. The semiconductor device assembly of claim 5 , wherein the spacer material substantially absorbs the interconnect.
7. The semiconductor device assembly of claim 1 , further comprising a bond pad at the active surface of the semiconductor device, the bond pad being electrically coupled to the interconnect.
8. The semiconductor device assembly of claim 7 , wherein the interconnect includes a conductive pillar attached to the bond pad.
9. The semiconductor device assembly of claim 8 , wherein the conductive pillar includes a substantially straight sidewall.
10. The semiconductor device assembly of claim 8 , wherein the conductive pillar has a cylindrical shape.
11. The semiconductor device assembly of claim 8 , wherein the conductive pillar has a truncated conical shape.
12. The semiconductor device assembly of claim 1 , wherein the first bond pad is a left-most bond pad, and wherein the redistribution network further includes a second, right-most bond pad opposite the first bond pad.
13. The semiconductor device assembly of claim 1 , wherein a side surface of the first bond pad is aligned with a side surface of the semiconductor device.
14. The semiconductor device assembly of claim 1 , wherein the first bond pad is coupled to an internal circuitry in the semiconductor device.
15. The semiconductor device assembly of claim 1 , wherein the redistribution network further includes a third bond pad electrically coupled to the at least one interconnect.
16. The semiconductor device assembly of claim 15 , wherein a third upper surface of the third bond pad is elevated from the first upper surface of the first bond pad.