IP Library Granted Patent US 10,360,964
Granted Patent B2
US 10,360,964 · App. 15/855,589 · Granted Jul 23, 2019

Method of writing contents in memory during a power up sequence using a dynamic redundancy register in a memory device

Inventors: Neal Berger (Cupertino, CA); Benjamin Louie (Fremont, CA); Mourad El-Baraji (Fremont, CA); Lester Crudele (Tomball, TX); Daniel Hillman (San Jose, CA)
Assignee: Spin Memory, Inc.
G11C11/1675G06F12/0804G11C7/1039G11C7/20G11C11/1653G11C11/1673G11C11/1677G11C11/1697G11C13/0033G11C14/0081
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Quick Facts
Patent No.
US 10,360,964
App. No.
15/855,589
Granted
Jul 23, 2019
Kind
B2
Abstract

A method of writing data into a memory device is disclosed. The method comprises utilizing a pipeline to process write operations of a first plurality of data words addressed to a memory bank. The method further comprises writing a second plurality of data words and associated memory addresses into a cache memory, and wherein each data word of the second plurality of data words is associated with a pending operation. Additionally, the method comprises detecting a power up signal and responsive to the power up signal, transferring the second plurality of data words and associated memory addresses from the secure memory storage area to the cache memory. Finally, responsive to the transferring, and before the memory device is powered up, the method comprises processing the second plurality of data words and associated memory addresses from the cache memory to the pipeline for writing data to the memory bank during power up.

Claims (54)

1. A method of writing data into a memory device, the method comprising:

utilizing a pipeline to process write operations of a first plurality of data words addressed to a memory bank;

writing a second plurality of data words and associated memory addresses into a cache memory, wherein said cache memory is associated with said memory bank and wherein further each data word of said second plurality of data words is either awaiting write verification associated with said memory bank or is to be re-written into said memory bank;

detecting a power down signal;

responsive to the power down signal, transferring the second plurality of data words and associated memory addresses from said cache memory into a secure memory storage area in the memory bank;

detecting a power up signal;

responsive to the power up signal, and before said memory device is powered up, transferring the second plurality of data words and associated memory addresses from said secure memory storage area to said cache memory; and

responsive to the transferring, and before said memory device is powered up, processing the second plurality of data words and associated memory addresses from said cache memory to said pipeline for writing data to the memory bank during power up.

2. A method as described in claim 1 wherein said memory bank comprises a plurality of spin-transfer torque magnetic random access memory (STT-MRAM) cells.

3. A method as described in claim 1 further comprising:

responsive to said power down signal, transferring any partially completed write operations of said pipeline to said secure memory storage area.

4. A method as described in claim 1 further comprising:

responsive to said power down signal, copying any partially completed write operations of said pipeline to said cache memory.

5. A method as described in claim 1 wherein said transferring comprise utilizing a secure communication process substantially compliant with one of: voting; ECC encoding; use of multiple copies; comparing multiple copies; and voting from multiple copies.

6. A method as described in claim 1 wherein said power down signal originates from a system level software stack and represents a system wide orderly power down event.

7. A method as described in claim 1 further comprising removing a data word and its associated address from said cache memory responsive to an indication that said data word has been verified as properly written to said memory bank.

8. A method of writing data into a memory device, the method comprising:

utilizing a pipeline to process write operations of a first plurality of data words addressed to a memory bank;

writing a second plurality of data words and associated memory addresses into a cache memory, wherein said cache memory is associated with said memory bank and wherein further each data word of said second plurality of data words is either awaiting write verification associated with said memory bank or is to be re-written into said memory bank;

detecting a power down signal;

responsive to the power down signal, transferring the second plurality of data words and associated memory addresses from said cache memory into a secure memory storage area in the memory bank;

detecting a power up signal; and

responsive to the power up signal, and before said memory device is powered up, transferring the second plurality of data words and associated memory addresses from said secure memory storage area to said pipeline for writing data to the memory bank during power up.

9. A method as described in claim 8 wherein said memory bank comprises a plurality of spin-transfer torque magnetic random access memory (STT-MRAM) cells.

10. A method as described in claim 8 further comprising:

responsive to said power down signal, transferring any partially completed write operations of said pipeline to said secure memory storage area.

11. A method as described in claim 8 further comprising:

responsive to said power down signal, copying any partially completed write operations of said pipeline to said cache memory.

12. A method as described in claim 8 wherein said transferring comprise utilizing a secure communication process substantially compliant with one of: voting; ECC encoding; use of multiple copies; comparing multiple copies; and voting from multiple copies.

13. A method as described in claim 8 wherein said power down signal originates from a system level software stack and represents a system wide orderly power down event.

14. A method as described in claim 8 further comprising removing a data word and its associated address from said cache memory responsive to an indication that said data word has been verified as properly written to said memory bank.

15. A memory device for storing data, the memory device comprising:

a memory bank comprising a plurality of addressable memory cells;

a pipeline configured to process write operations of a first plurality of data words addressed to said memory bank;

a cache memory operable for storing a second plurality of data words and associated memory addresses, wherein said cache memory is associated with said memory bank and wherein further each data word of said second plurality of data words is either awaiting write verification associated with said memory bank or is to be re-written into said memory bank; and

a logic module operable to:

detect a power down signal;

responsive to the power down signal, transfer the second plurality of data words and associated memory addresses from said cache memory into a secure memory storage area reserved in the memory bank;

detect a power up signal;

responsive to said power up signal, and before said memory device is powered up, transfer data words and associated memory addresses from said secure memory storage area to said cache memory; and

before said memory device is powered up, process said data words and associated memory addresses from said cache memory to said pipeline for storage to said memory bank during power up.

16. A memory device as described in claim 15 wherein said plurality of addressable memory cells of said memory bank comprises spin-transfer torque magnetic random access memory (STT-MRAM) cells.

17. A memory device as described in claim 15 wherein said logic module utilizes a secure communication process substantially compliant with one of: voting; ECC encoding; use of multiple copies; comparing multiple copies; and voting from multiple copies.

18. A memory device as described in claim 15 wherein a data word and its associated address are removed from said cache memory responsive to an indication that said data word has been verified as properly written to said memory bank.

19. A memory device for storing data, the memory device comprising:

a memory bank comprising a plurality of addressable memory cells;

a pipeline configured to process write operations of a first plurality of data words addressed to said memory bank;

a cache memory operable for storing a second plurality of data words and associated memory addresses, wherein said cache memory is associated with said memory bank and wherein further each data word of said second plurality of data words is either awaiting write verification associated with said memory bank or is to be re-written into said memory bank; and

a logic module operable to:

detect a power down signal;

responsive to the power down signal, transfer the second plurality of data words and associated memory addresses from said cache memory into a secure memory storage area reserved in the memory bank;

detect a power up signal; and

responsive to said power up signal, and before said memory device is powered up, transfer data words and associated memory addresses from said secure memory storage area to said pipeline for storage to said memory bank during power up.

20. A memory device as described in claim 19 wherein said plurality of addressable memory cells of said memory bank comprises spin-transfer torque magnetic random access memory (STT-MRAM) cells.

Assignments (4)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 11, 2021
From: SPIN (ASSIGNMENT FOR BENEFIT OF CREDITORS), LLC
To: INTEGRATED SILICON SOLUTION, (CAYMAN) INC.
Reel/Frame 057473/0319 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 20, 2021
From: SPIN MEMORY, INC.
To: SPIN (ASSIGNMENT FOR THE BENEFIT OF CREDITORS), LLC
Reel/Frame 056927/0038 →
CHANGE OF NAME Recorded Jun 10, 2019
From: SPIN TRANSFER TECHNOLOGIES, INC.
To: SPIN MEMORY, INC.
Reel/Frame 049421/0501 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 27, 2017
From: BERGER, NEAL; LOUIE, BENJAMIN; EL-BARAJI, MOURAD; CRUDELE, LESTER; HILLMAN, DANIEL
To: SPIN TRANSFER TECHNOLOGIES, INC.
Reel/Frame 044493/0175 →
Continuity (2)
Continuation In Part 15277799 · Sep 27, 2016
Related Publication 20180122447A1 · May 3, 2018
Cited By (1)
US 12,712,007