Three dimensional perpendicular magnetic junction with thin-film transistor
According to one embodiment, an apparatus includes: a substrate, an array of 3D structures, where each 3D structure includes a source region having a first conductivity, a series of layers positioned in a vertical direction, a channel material on a surface of at least one sidewall of each 3D structure, and a gate dielectric material on the channel material. The series of layers includes a dielectric layer positioned above the substrate, a plurality of a set of MTJ layers positioned above the dielectric layer, and a buffer layer positioned in between the dielectric layer and each set of MTJ layers thereof. The magnetic memory device further includes an isolation region positioned between the 3D structures and at least one gate region positioned above the isolation region, where each gate region is coupled to at least one sidewall of each 3D structure.
1. An apparatus, comprising:
at least one three-dimensional memory device, comprising:
a substrate, comprising a first semiconductor material;
an array of three dimensional structures, each three-dimensional structure comprising:
a source region having a first conductivity;
a series of layers positioned in a vertical direction, the series of layers comprising: a dielectric layer positioned above the substrate, a plurality of a set of magnetic tunnel junction layers positioned above the dielectric layer, and a buffer layer positioned in between the dielectric layer and each set of magnetic tunnel junction layers thereof;
a channel material on a surface of at least one sidewall of each three-dimensional structure; and
a gate dielectric material on the channel material on the surface of at least one sidewall of each three-dimensional structure;
an isolation region positioned between the three-dimensional structures; and
at least one gate region positioned above the isolation region, wherein each gate region is coupled to a portion of at least one vertical sidewall of each 3D structure.
2. An apparatus as recited in claim 1 , wherein the set of magnetic tunnel junction layers is a perpendicular-magnetic tunnel junction sensor.
3. An apparatus as recited in claim 1 , wherein the first conductivity of each source region is a metal.
4. An apparatus as recited in claim 1 , wherein the first conductivity of each source region is a n-type conductivity.
5. An apparatus as recited in claim 2 , wherein at least one gate region is coupled to at least one perpendicular-magnetic tunnel junction sensor.
6. An apparatus as recited in claim 2 , wherein the first semiconductor material is silicon.
7. An apparatus as recited in claim 2 , wherein each three dimensional structure is a pillar.
8. An apparatus as recited in claim 2 , wherein the perpendicular-magnetic tunnel junction sensor comprises:
a seed layer;
an underlayer;
a synthetic antiferromagnetic seed layer;
a synthetic antiferromagnetic layer
an antiferromagnetic coupling layer;
a ferromagnetic coupling layer;
a reference layer;
a barrier layer;
a free layer; and
a capping layer.
9. An apparatus as recited in claim 2 , wherein the buffer layer is conductive.
10. An apparatus as recited in claim 2 , wherein the buffer layer includes one intermetallic layer selected from the group consisting of: Ni/Au, Ti/Al, and Ta/Au.
11. An apparatus as recited in claim 2 , wherein the buffer layer forms a low-barrier Schottky contact with the channel material.
12. An apparatus as recited in claim 2 , wherein the channel material comprises material selected from the group consisting of: InZnO, ZnO, and InZnGaO.
13. An apparatus as recited in claim 2 , wherein the buffer layer forms an ohmic contact with the channel material.
14. An apparatus as recited in claim 2 , wherein the buffer layer comprises metallic material selected from the group consisting of: Ni, Au, C, Pt, and Al.
15. An apparatus as recited in claim 2 , wherein the gate dielectric material comprises at least one selected from the comprising of: SiO 2 , ZrO 2 , HfO 2 , and Al 2 O 3 .
16. An apparatus as recited in claim 2 , wherein each of the three-dimensional structures has a bottom at the substrate, a top, and a sidewall extending between the bottom and the top, wherein the gate region extends across a cavity region between at least one sidewall of each adjacent three-dimensional structure in an x-direction, wherein the gate region is coupled to at least one sidewall of each three-dimensional structure in the x-direction.
17. An apparatus as recited in claim 2 , wherein each gate region comprises a second semiconductor material having a second conductivity.
18. An apparatus as recited in claim 17 , wherein the second conductivity of the second semiconductor material of each gate region is a metal.
19. An apparatus as recited in claim 18 , wherein the gate region comprising at least one selected from the group consisting of: W, TiNi, TaN, TiN, and Ti.
20. An apparatus as recited in claim 2 , wherein an isolation region is positioned above and below each gate region.
21. An apparatus as recited in claim 20 wherein the isolation region includes insulation material.