Patent Assignment
Reel/Frame 048040/0409
Change of Name
Recorded: 2019-01-09
Pages: 32
Assignor
SPIN TRANSFER TECHNOLOGIES, INC.
Executed: 2018-11-08
Assignee
SPIN MEMORY, INC.
45500 NORTHPORT LOOP WEST, FREMONT, CALIFORNIA, 94538
Covered Properties
(47)
Predicting Tunnel Barrier Endurance Using Redundant Memory Structures
Patent:
10,236,075 →
Application:
15/851,593 →
Steep Slope Field-Effect Transistor (Fet) for a Perpendicular Magnetic Tunnel Junction (Pmtj)
Patent:
10,243,021 →
Application:
15/855,953 →
Fabrication Methods of Forming Cylindrical Vertical Si Etched Channel 3D Switching Devices
Methods of Forming Perpendicular Magnetic Tunnel Junction Memory Cells Having Vertical Channels
Perpendicular Magnetic Tunnel Junction Memory Cells Having Vertical Channels
Cylindrical Vertical Si Etched Channel 3D Switching Devices
Perpendicular Magnetic Tunnel Junction Memory Cells Having Shared Source Contacts
Method of Making a Three Dimensional Perpendicular Magnetic Tunnel Junction with Thin-Film Transistor
Flexible Substrate for Use with a Perpendicular Magnetic Tunnel Junction (Pmtj)
Three Dimensional Perpendicular Magnetic Junction with Thin-Film Transistor
Vertical Compound Semiconductor for Use with a Perpendicular Magnetic Tunnel Junction (Pmtj)
Application:
15/859,116 →
Publication:
US 2019/0207098
Vertical Steep-Slope Field-Effect Transistor (I-MOSFET) with Offset Gate Electrode for Driving a Perpendicular Magnetic Tunnel Junction (PMTJ)
Magnetic Memory having a Pinning Synthetic Antiferromagnetic Structure (SAF) with Cobalt over Platinum (Pt/Co) Bilayers
Methods for Manufacturing a Perpendicular Magnetic Tunnel Junction (p-MTJ) MRAM having a Precessional Spin Current Injection (PSC) Structure
Method for Manufacturing a Magnetic Memory Device by Pre-Patterning a Bottom Electrode prior to Patterning a Magnetic Material
Fabrication Methods of Forming Annular Vertical Si Etched Channel Mos Devices
Perpendicular Magnetic Tunnel Junction Retention and Endurance Improvement
Annular Vertical Si Etched Channel Mos Devices
Antiferromagnetic Exchange Coupling Enhancement in Perpendicular Magnetic Tunnel Junction Stacks for Magnetic Random Access Memory Applications
Method for Combining Nvm Class and Sram Class Mram Elements on the Same Chip
Patent:
10,211,395 →
Application:
15/859,451 →
Vertically-Strained Silicon Device for Use with a Perpendicular Magnetic Tunnel Junction (Pmtj)
Magnetic Random Access Memory with Reduced Internal Operating Temperature Range
Magnetic Memory Chip Having Nvm Class and Sram Class Mram Elements on the Same Chip
HIGH RETENTION STORAGE LAYER USING ULTRA-LOW RA MgO PROCESS IN PERPENDICULAR MAGNETIC TUNNEL JUNCTIONS FOR MRAM DEVICES
Method for Manufacturing High Density Magnetic Random Access Memory Devices Using Diamond Like Carbon Hard Mask
Perpendicular Magnetic Tunnel Junction Having Improved Reference Layer Stability
Method for Manufacturing Reduced Pitch Magnetic Random Access Memory Pillar
Method for Measuring Proximity Effect on High Density Magnetic Tunnel Junction Devices in a Magnetic Random Access Memory Device
Method for Manufacturing Magnetic Tunnel Junction Pillars Using Photolithographically Directed Block Copolymer Self-Assembly and Organometallic Gas Infusion
Magnetic Random Access Memory Having Improved Reliability Through Thermal Cladding
Patent:
10,186,308 →
Application:
15/862,495 →
Fabrication of a Perpendicular Magnetic Tunnel Junction (Pmtj) Using Block Copolymers
Buried Tap for a Vertical Transistor Used with a Perpendicular Magnetic Tunnel Junction (Pmtj)
Patent:
10,186,551 →
Application:
15/865,109 →
High Density 3D Magnetic Random Access Memory (Mram) Cell Integration Using Wafer Cut and Transfer
Method for Manufacturing a Chemical Guidance Pattern for Block Copolymer Self Assembly from Photolithographically Defined Topographic Block Copolymer Guided Self Assembly
Patent:
10,305,031 →
Application:
15/866,362 →
Method for Manufacturing High Density Magnetic Tunnel Junction Devices Using Photolithographic Vias and Chemically Guided Block Copolymer Self Assembly
Patent:
10,312,435 →
Application:
15/866,370 →
Dual Channel/Gate Vertical Field-Effect Transistor (Fet) for Use with a Perpendicular Magnetic Tunnel Junction (Pmtj)
Method for Manufacturing a Magnetic Memory Element Array Using High Angle Side Etch to Open Top Electrical Contact
Three Dimensional Perpendicular Magnetic Tunnel Junction with Thin Film Transistor Array
MAGNETIC MEMORY ELEMENT HAVING MgO ISOLATION LAYER
Application:
16/019,429 →
Publication:
US 2019/0392879
Patterning of High Density Small Feature Size Pillar Structures
Magnetic Tunnel Junction Memory Element with Improved Reference Layer Stability for Magnetic Random Access Memory Application
Precessional Spin Current Structure for Magnetic Random Access Memory with Novel Capping Materials
Method for Forming High Density Structures with Improved Resist Adhesion to Hard Mask
Application:
16/140,455 →
Publication:
US 2020/0098980
Magnetic Memory Element with Voltage Controlled Magnetic Anistropy
Memory System Utilizing Heterogeneous Magnetic Tunnel Junction Types in a Single Chip
Method for Manufacturing a Data Recording System Utilizing Heterogeneous Magnetic Tunnel Junction Types in a Single Chip
High Density Mram Integration
Application:
62/694,911 →
Related Assignments
(24)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest
Jan 4, 2018
From: SHARMA, GIAN; LEVI, AMITAY; WALKER, ANDREW J.; KIM, KUK-HWAN
To: SPIN TRANSFER TECHNOLOGIES, INC.
Reel/Frame 045004/0850 →
Assignment of Assignor's Interest
Jan 4, 2018
From: KIM, KUK-HWAN; CUEVAS, PETER; LOUIE, BENJAMIN; LEVI, AMITAY
To: SPIN TRANSFER TECHNOLOGIES, INC.
Reel/Frame 044537/0133 →
Assignment of Assignor's Interest
Jan 4, 2018
From: KIM, KUK-HWAN; BEERY, DAFNA; LEVI, AMITAY; WALKER, ANDREW J.
To: SPIN TRANSFER TECHNOLOGIES, INC.
Reel/Frame 044538/0481 →
Assignment of Assignor's Interest
Jan 4, 2018
From: KIM, KUK-HWAN; BEERY, DAFNA; LEVI, AMITAY; WALKER, ANDREW J.
To: SPIN TRANSFER TECHNOLOGIES, INC.
Reel/Frame 044539/0042 →
Assignment of Assignor's Interest
Jan 4, 2018
From: KIM, KUK-HWAN; BEERY, DAFNA; LEVI, AMITAY; WALKER, ANDREW J.
To: SPIN TRANSFER TECHNOLOGIES, INC.
Reel/Frame 044539/0179 →
Assignment of Assignor's Interest
Jan 4, 2018
From: SHARMA, GIAN; LEVI, AMITAY; WALKER, ANDREW J.; KIM, KUK-HWAN
To: SPIN TRANSFER TECHNOLOGIES, INC.
Reel/Frame 044540/0351 →
Assignment of Assignor's Interest
Jan 4, 2018
From: KIM, KUK-HWAN; BEERY, DAFNA; LEVI, AMITAY; WALKER, ANDREW J.
To: SPIN TRANSFER TECHNOLOGIES, INC.
Reel/Frame 044540/0428 →
Assignment of Assignor's Interest
Jan 4, 2018
From: KIM, KUK-HWAN; BEERY, DAFNA; LEVI, AMITAY; WALKER, ANDREW J.
To: SPIN TRANSFER TECHNOLOGIES, INC.
Reel/Frame 044540/0480 →
Assignment of Assignor's Interest
Jan 13, 2018
From: KIM, KUK-HWAN; GAJEK, MARCIN; BEERY, DAFNA; LEVI, AMITAY
To: SPIN TRANSFER TECHNOLOGIES, INC.
Reel/Frame 044615/0550 →
Assignment of Assignor's Interest
Jan 13, 2018
From: KIM, KUK-HWAN; BEERY, DAFNA; SHARMA, GIAN; GAJEK, MARCIN
To: SPIN TRANSFER TECHNOLOGIES, INC.
Reel/Frame 044615/0575 →
Assignment of Assignor's Interest
Jan 25, 2018
From: VASQUEZ, JORGE; KARDASZ, BARTLOMIEJ ADAM; PINARBASI, MUSTAFA; JAGTIANI, GIRISH
To: SPIN TRANSFER TECHNOLOGIES, INC.
Reel/Frame 044733/0396 →
Assignment of Assignor's Interest
Jan 29, 2018
From: PINARBASI, MUSTAFA; KARDASZ, BARTLOMIEJ ADAM; VASQUEZ, JORGE; BOONE, THOMAS D.
To: SPIN TRANSFER TECHNOLOGIES, INC.
Reel/Frame 044756/0423 →
Assignment of Assignor's Interest
Feb 1, 2018
From: SHARMA, GIAN; LEVI, AMITAY; WALKER, ANDREW J.; KIM, KUK-HWAN
To: SPIN TRANSFER TECHNOLOGIES, INC.
Reel/Frame 045234/0533 →
Assignment of Assignor's Interest
Feb 15, 2018
From: KIM, KUK-HWAN; BEERY, DAFNA; LEVI, AMITAY; WALKER, ANDREW J.
To: SPIN TRANSFER TECHNOLOGIES, INC.
Reel/Frame 044945/0848 →
Assignment of Assignor's Interest
Mar 7, 2018
From: SHARMA, GIAN; LEVI, AMITAY; WALKER, ANDREW J.; KIM, KUK-HWAN
To: SPIN TRANSFER TECHNOLOGIES, INC.
Reel/Frame 045527/0233 →
Assignment of Assignor's Interest
Mar 8, 2018
From: KARDASZ, BARTLOMIEJ ADAM; VASQUEZ, JORGE; WOLF, GEORG; PINARBASI, MUSTAFA
To: SPIN TRANSFER TECHNOLOGIES, INC.
Reel/Frame 045143/0734 →
Assignment of Assignor's Interest
Mar 8, 2018
From: KARDASZ, BARTLOMIEJ ADAM; VASQUEZ, JORGE; PINARBASI, MUSTAFA; WOLF, GEORG
To: SPIN TRANSFER TECHNOLOGIES, INC.
Reel/Frame 045143/0160 →
Assignment of Assignor's Interest
Apr 17, 2018
From: KIM, KUK-HWAN; BEERY, DAFNA; LEVI, AMITAY; WALKER, ANDREW J.
To: SPIN TRANSFER TECHNOLOGIES, INC.
Reel/Frame 045566/0204 →
Assignment of Assignor's Interest
Jun 12, 2018
From: BOZDAG, KADRIYE DENIZ
To: SPIN TRANSFER TECHNOLOGIES, INC.
Reel/Frame 046351/0184 →
Assignment of Assignor's Interest
Jul 20, 2021
From: SPIN MEMORY, INC.
To: SPIN (ASSIGNMENT FOR THE BENEFIT OF CREDITORS), LLC
Reel/Frame 056927/0038 →
Assignment of Assignor's Interest
Sep 3, 2021
From: SPIN (ASSIGNMENT FOR BENEFIT OF CREDITORS), LLC
To: INTEGRATED SILICON SOLUTION, (CAYMAN) INC.
Reel/Frame 057407/0829 →
Assignment of Assignor's Interest
Sep 3, 2021
From: SPIN MEMORY, INC.
To: SPIN (ASSIGNMENT FOR BENEFIT OF CREDITORS), LLC
Reel/Frame 057407/0802 →
Assignment of Assignor's Interest
Sep 11, 2021
From: SPIN (ASSIGNMENT FOR BENEFIT OF CREDITORS), LLC
To: INTEGRATED SILICON SOLUTION, (CAYMAN) INC.
Reel/Frame 057473/0319 →
Assignment of Assignor's Interest
Oct 28, 2021
From: SPIN MEMORY, INC.
To: SPIN (ASSIGNMENT FOR BENEFIT OF CREDITORS), LLC
Reel/Frame 057949/0128 →