Magnetic tunnel junction memory element with improved reference layer stability for magnetic random access memory application
A magnetic memory element for using in magnetic random access memory. The magnetic memory element includes a novel exchange coupling layer for use in an antiferromagnetic structure for magnetically pinning a magnetic reference layer of the memory element. The exchange coupling layer is located between a first magnetic layer (reference layer) and a second magnetic layer (keeper layer). The exchange coupling layer includes a layer of Ru located between first and second layers of Ir. The Ir layers can be in contact with each of the first and second magnetic layers to provide an interfacial magnetic anisotropy, as well as providing RKKY exchange field. The Ru layer, provides an increased RKKY exchange field as a result of the high RKKY exchange coupling of Ru.
1. A memory element for use in a magnetic random access memory array, the memory element comprising:
a magnetic free layer;
a magnetic reference layer; and
a non-magnetic barrier layer located between the magnetic free layer and the magnetic reference layer, wherein the magnetic reference layer is part of an antiferromagnetic structure that further comprises:
the magnetic reference layer;
a magnetic pinning layer; and
an exchange coupling structure located between the magnetic reference layer and the magnetic pinning layer, the exchange coupling layer comprising a layer of Ru located between first and second layers of Ir.
2. The memory element as in claim 1 , wherein the layer of Ru is thicker than either of the first and second layers of Ir.
3. The memory element as in claim 1 , wherein the layer of Ru has a thickness of 0.4-0.9 nm and each of the first and second layers of Ir has a thickness of 0.2-0.5 nm.
4. The memory element as in claim 1 , wherein the first layer of Ir is in contact with the magnetic reference layer and the second layer of Ir is in contact with the magnetic pinning layer.
5. The memory element as in claim 1 , wherein the reference layer comprises multi-layers of Co and Pt, in a super lattice structure.
6. The memory element as in claim 1 , wherein the magnetic pinning layer comprises multi-layers of Co and Pt in a super lattice structure.
7. The memory element as in claim 1 , wherein the magnetic reference layer comprises a CoFeB alloy.
8. The memory element as in claim 1 , wherein the magnetic keeper layer comprises multi-layers of Co and Pd in a supper lattice structure.
9. The memory element as in claim 1 , wherein the exchange coupling structure results in both an exchange coupling field and an interfacial perpendicular magnetic anisotropy that keeps the magnetic reference layer and the magnetic pinning layer magnetized in opposite directions in an orientation that is perpendicular to the plane of the magnetic reference layer and the magnetic pinning layer.
10. The magnetic memory element as in claim 1 , wherein the exchange coupling structure further comprises additional multi-layer structures, each further including a layer of Ru located between layers of Ir.
11. A magnetic random access memory system, comprising:
a plurality of memory elements formed in an array; and
circuitry connected with the plurality of memory elements, the circuitry being configured to write data to the memory elements and read data from the memory elements, each of the memory elements further comprising:
a magnetic free layer;
a magnetic reference layer; and
a non-magnetic barrier layer located between the magnetic free layer and the magnetic reference layer, wherein the magnetic reference layer is part of an antiferromagnetic structure that further comprises:
the magnetic reference layer;
a magnetic pinning layer; and
an exchange coupling structure located between the magnetic reference layer and the magnetic pinning layer, the exchange coupling layer comprising a layer of Ru located between first and second layers of Ir.
12. The magnetic random access memory system as in claim 11 , wherein the layer of Ru is thicker than either of the first and second layers of Ir.
13. The magnetic random access memory system as in claim 11 , wherein the layer of Ru has a thickness of 0.4-0.9 nm and each of the first and second layers of Ir has a thickness of 0.2-0.5 nm.
14. The magnetic random access memory system as in claim 11 , wherein the first layer of Ir is in contact with the magnetic reference layer and the second layer of Ir is in contact with the magnetic pinning layer.
15. The magnetic random access memory system as in claim 11 , wherein the reference layer comprises multi-layers of Co and Pt in a super lattice structure.
16. The magnetic random access memory system as in claim 11 , wherein the magnetic pinning layer comprises multi-layers of Co and Pt in a super lattice structure.
17. The magnetic random access memory system as in claim 11 , wherein the magnetic reference layer comprises a CoFeB alloy.
18. The magnetic random access memory system as in claim 11 , wherein the magnetic keeper layer comprises multi-layers of Co and Pd in a supper lattice structure.
19. The magnetic random access memory system as in claim 11 , wherein the exchange coupling structure results in both an exchange coupling field and an interfacial perpendicular magnetic anisotropy that keeps the magnetic reference layer and the magnetic pinning layer magnetized in opposite directions in an orientation that is perpendicular to the plane of the magnetic reference layer and the magnetic pinning layer.
20. The magnetic memory element as in claim 11 , wherein the exchange coupling structure further comprises additional multi-layer structures, each further including a layer of Ru located between layers of Ir.