Perpendicular magnetic tunnel junction retention and endurance improvement
A magnetic data recording element for magnetic random access memory data recording. The magnetic data recording element includes a magnetic tunnel junction element that includes a magnetic reference layer, a magnetic free layer and a non-magnetic barrier layer located between the non-magnetic reference layer and the magnetic free layer. The magnetic free layer includes a layer of Hf that causes the magnetic free layer to have an increased perpendicular magnetic anisotropy. This increased perpendicular magnetic anisotropy improves data retention and increases thermal stability, by preventing the magnetization of the magnetic free layer from inadvertently losing its magnetic orientation.
1. A magnetic random access memory element comprising:
a magnetic reference layer;
a magnetic free layer; and
a non-magnetic barrier layer, located between the magnetic reference layer and the magnetic free layer;
the magnetic free layer comprising a magnetic material, a layer of Hf, and a layer of W, wherein the layer of layer of Hf and the layer of W contact one another, the layer of Hf and the layer of W both contact the magnetic material; wherein
the layer of Hf and the layer of W each have a thickness of 1-6 Angstroms.
2. The magnetic random access memory element as in claim 1 , further comprising a layer of Mg—O formed over the magnetic free layer at a location opposite the non-magnetic barrier layer.
3. The magnetic random access memory element as in claim 1 further comprising a layer of Mg—O.
4. The magnetic random access memory element as in claim 1 wherein the magnetic free layer further comprises a layer of Mg—O and wherein the layer of Mg—O has a thickness of 2-6 Angstroms.
5. A magnetic random access memory element, comprising:
a magnetic reference layer;
a magnetic free layer; and
a non-magnetic barrier layer disposed between the magnetic reference layer and the magnetic free layer;
wherein the magnetic free layer comprises:
a first magnetic layer;
a second magnetic layer;
a spacer layer located between the first magnetic layer and the second magnetic layer, the spacer layer comprising a layer of Hf in contact with the first magnetic layer and a layer of W in contact with the second magnetic layer; wherein each of the layer of Hf and the layer of W have a thickness of 1-6 Angstroms.
6. The magnetic random access memory element as in claim 5 , wherein the layer of Hf and the layer of W contact one another.
7. The magnetic random access memory element as in claim 5 , wherein the spacer layer includes a layer of Mg—O.
8. The magnetic random access memory element as in claim 5 , wherein the spacer layer is sufficiently thin to maintain exchange coupling between the first and second magnetic layers.
9. The magnetic random access memory element as in claim 5 , wherein the layer of W is located between the layer of layer of Hf and the non-magnetic barrier layer.
10. The magnetic random access memory element as in claim 5 , wherein the spacer layer has a total thickness not greater than 6 nm.
11. The magnetic random access memory element as in claim 5 , further comprising a cap layer formed over the magnetic free layer, the cap layer including a layer of Mg—O and a layer of Hf.
12. A magnetic random access memory system, comprising:
a memory element that includes a magnetic reference layer, a magnetic free layer and a non-magnetic barrier layer located between the magnetic reference layer and the magnetic free layer; and
circuitry electrically connected with the memory element, the circuitry being functional to supply a current to the magnetic element to write a data bit to the magnetic memory element and to measure an electrical resistance of the memory element to read a data bit from the memory element;
wherein the magnetic free layer further comprises:
first and second magnetic layers and a spacer layer located between the first and second magnetic layers, the spacer layer comprising a layer of Hf in contact with the first magnetic layer and a layer of W in contact with the layer of Hf and also in contact with the second magnetic layer; wherein each of the layer of Hf and the layer of W have a thickness of 1-6 Angstroms.
13. The magnetic random access memory system as in claim 12 , further comprising a cap layer including a layer of Hf located over the magnetic free layer.
14. The magnetic random access memory system as in claim 12 further comprising a cap layer formed over the magnetic free layer, the cap layer comprising a layer of Hf and a layer of W.