Perpendicular magnetic tunnel junction device with skyrmionic enhancement layers for the precessional spin current magnetic layer
A magnetoresistive random-access memory (MRAM) is disclosed. The MRAM device includes a perpendicular magnetic tunnel junction device having a reference layer, a free layer, and a precessional spin current magnetic layer. A skyrmionic enhancement layer is provided adjacent to the precessional spin current magnetic layer. The skyrmionic enhancement layer helps to improve the response of the precessional spin current magnetic layer to applied spin polarized currents.
1. A magnetic device, comprising:
a first synthetic antiferromagnetic structure in a first plane having a magnetization vector that is perpendicular to the first plane and having a fixed magnetization direction;
an antiferromagnetic coupling layer in a second plane and disposed above the first synthetic antiferromagnetic structure;
a second synthetic antiferromagnetic structure in a third plane and disposed over the antiferromagnetic coupling layer;
a magnetic reference layer in a fourth plane and disposed over the second synthetic antiferromagnetic structure, the magnetic reference layer having a magnetization vector that is perpendicular to the fourth plane and having a fixed magnetization direction;
a non-magnetic tunnel barrier layer in a fifth plane and disposed over the magnetic reference layer;
a free magnetic layer disposed in a sixth plane over the non-magnetic tunnel barrier layer, the free magnetic layer having a magnetization vector that is perpendicular to the sixth plane and having a magnetization direction that can switch between a first magnetization direction to a second magnetization direction, the magnetic reference layer, the non-magnetic tunnel barrier layer and the free magnetic layer forming a magnetic tunnel junction;
a precessional spin current magnetic layer disposed in a seventh plane that is physically separated from the free magnetic layer and coupled to the free magnetic layer by a filter coupling layer that may induce ferromagnetic or antiferromagnetic coupling between the free magnetic layer and the precessional spin current layer; and
a skyrmionic enhancement layer disposed in an eighth plane over the precessional spin current magnetic layer and being formed from a heavy metal with large spin-orbit coupling such that the skyrmionic enhancement layer induces a Dzyaloshinskii-Moriya interaction at an interface between the precessional spin current magnetic layer and the skyrmionic enhancement layer thereby creating a non-collinear magnetic texture in the precessional spin current magnetic layer near the interface.
2. The magnetic device of claim 1 , wherein the skyrmionic enhancement layer is formed of tungsten, iridium, palladium, gold, platinum, or alloys thereof.
3. The magnetic device of claim 1 , wherein the skyrmionic enhancement layer is formed from a single layer of metal.
4. The magnetic device of claim 3 , wherein a thickness of the skyrmionic enhancement layer is in the range of 0.3 nm to 4 nm.
5. The magnetic device of claim 1 , wherein the skyrmionic enhancement layer includes multiple layers of metal.
6. The magnetic device of claim 5 , wherein a thickness of the skyrmionic enhancement layer is in the range of 0.6 nm to 12 nm.
7. The magnetic device of claim 5 , wherein the skyrmionic enhancement layer includes alternating first and second layers, wherein the first layers are formed of tungsten, iridium, palladium, gold, platinum, or alloys thereof, and wherein the second layers are formed of iron, cobalt, nickel, or alloys thereof.
8. A magnetic device, comprising:
a magnetic reference layer in a first plane, the magnetic reference layer having a magnetization vector that is perpendicular to the first plane and having a fixed magnetization direction;
a non-magnetic tunnel barrier layer in a second plane and disposed over the magnetic reference layer;
a free magnetic layer disposed in a third plane over the non-magnetic tunnel barrier layer, the free magnetic layer having a magnetization vector that is perpendicular to the third plane and having a magnetization direction that can switch between a first magnetization direction to a second magnetization direction, the magnetic reference layer, the non-magnetic tunnel barrier layer and the free magnetic layer forming a magnetic tunnel junction;
a precessional spin current magnetic layer disposed in a fourth plane that is physically separated from the free magnetic layer and coupled to the free magnetic layer by a filter coupling layer that may induce ferromagnetic or antiferromagnetic coupling between the free magnetic layer and the precessional spin current magnetic layer; and
a skyrmionic enhancement layer disposed in a fifth plane over the precessional spin current magnetic layer and being formed from a heavy metal with large spin-orbit coupling such that the skyrmionic enhancement layer induces a Dzyaloshinskii-Moriya interaction at an interface between the precessional spin current magnetic layer and the skyrmionic enhancement layer thereby creating a non-collinear magnetic texture in the precessional spin current magnetic layer near the interface.
9. The magnetic device of claim 8 , wherein the skyrmionic enhancement layer is formed of tungsten, iridium, platinum, gold, palladium, or alloys thereof.
10. The magnetic device of claim 8 , wherein the skyrmionic enhancement layer is formed of tungsten.
11. The magnetic device of claim 8 , wherein the skyrmionic enhancement layer is formed of iridium.
12. The magnetic device of claim 8 , wherein the skyrmionic enhancement layer is formed of platinum.
13. The magnetic device of claim 8 , wherein the skyrmionic enhancement layer is formed of gold.
14. The magnetic device of claim 8 , wherein the skyrmionic enhancement layer is formed of palladium.
15. The magnetic device of claim 8 , wherein the skyrmionic enhancement layer is formed from a single layer of metal.
16. The magnetic device of claim 15 , wherein a thickness of the skyrmionic enhancement layer is in the range of 0.3 nm to 4 nm.
17. The magnetic device of claim 8 , wherein the skyrmionic enhancement layer includes multiple layers of metal.
18. The magnetic device of claim 17 , wherein a thickness of the skyrmionic enhancement layer is in the range of 0.6 nm to 12 nm.
19. The magnetic device of claim 17 , wherein the skyrmionic enhancement layer includes alternating first and second layers, wherein the first layers are formed of tungsten, iridium, palladium, gold, platinum, or alloys thereof, and wherein the second layers are formed of iron, cobalt, nickel, or alloys thereof.
20. A method for manufacturing a magnetic device comprising the steps of:
providing a magnetic tunnel junction including a magnetic reference layer, a non-magnetic tunnel barrier layer, and a free magnetic layer;
depositing a filter coupling layer over the free magnetic layer;
depositing a precessional spin current magnetic layer over the filter coupling layer;
depositing a skyrmionic enhancement layer over the precessional spin current layer;
depositing an electrical contact layer over the skyrmionic enhancement layer; and
forming a pillar that includes the skyrmionic enhancement layer, the precessional spin current magnetic layer, the filter coupling layer, the free magnetic layer, the non-magnetic tunnel barrier layer, and the magnetic reference layer.