IP Library › Assignment 048075/0550
Patent Assignment
Reel/Frame 048075/0550

Change of Name

Recorded: 2019-01-15 Pages: 31
Assignor
SPIN TRANSFER TECHNOLOGIES, INC.
Executed: 2018-11-08
Assignee
SPIN MEMORY, INC.
45500 NORTHPORT LOOP, FREMONT, CALIFORNIA, 94538
Covered Properties (32)
Method for Manufacturing Mtj Memory Device
Patent: 9,263,667 →
Application: 14/341,185 →
Publication: US 2016/0027999
Magnetic Tunnel Junction Structure for Mram Device
Patent: 9,337,412 →
Application: 14/492,943 →
Publication: US 2016/0087193
Precessional Spin Current Structure for Mram
Patent: 9,853,206 →
Application: 14/814,036 →
Publication: US 2016/0372656
Spin Transfer Torque Structure for Mram Devices Having a Spin Current Injection Capping Layer
Patent: 9,728,712 →
Application: 14/866,359 →
Publication: US 2016/0315249
Method for Manufacturing Mtj Memory Device
Patent: 9,406,876 →
Application: 15/041,325 →
Publication: US 2016/0163973
High Annealing Temperature Perpendicular Magnetic Anisotropy Structure for Magnetic Random Access Memory
Application: 15/091,853 →
Publication: US 2016/0315118
Magnetic Tunnel Junction Structure for Mram Device
Application: 15/093,367 →
Publication: US 2016/0218278
Polishing Stop Layer(S) for Processing Arrays of Semiconductor Elements
Patent: 9,773,974 →
Application: 15/097,576 →
Publication: US 2017/0033283
Memory Cell Having Magnetic Tunnel Junction and Thermal Stability Enhancement Layer
Patent: 9,741,926 →
Application: 15/157,783 →
Publication: US 2017/0222132
Precessional Spin Current Structure with High in-Plane Magnetization for Mram
Application: 15/445,260 →
Publication: US 2018/0248113
Precessional Spin Current Structure with Non-Magnetic Insertion Layer for Mram
Application: 15/445,362 →
Publication: US 2018/0248110
Mram with Reduced Stray Magnetic Fields
Application: 15/634,629 →
Memory Cell Having Magnetic Tunnel Junction and Thermal Stability Enhancement Layer
Application: 15/656,398 →
Publication: US 2017/0324029
Spin Transfer Torque Structure for Mram Devices Having a Spin Current Injection Capping Layer
Application: 15/657,498 →
Publication: US 2017/0331033
Polishing Stop Layer(S) for Processing Arrays of Semiconductor Elements
Application: 15/674,620 →
Publication: US 2017/0346002
Precessional Spin Current Structure for Mram
Application: 15/794,871 →
Publication: US 2018/0047894
Ac Current Pre-Charge Write-Assist in Orthogonal Stt-Mram
Application: 15/858,950 →
Publication: US 2019/0206462
Self-Generating Ac Current Assist in Orthogonal Stt-Mram
Application: 15/858,988 →
Shared Oscillator (Stno) for Mram Array Write-Assist in Orthogonal Stt-Mram
Application: 15/859,015 →
Ac Current Write-Assist in Orthogonal Stt-Mram
Application: 15/859,030 →
Three-Terminal Mram with Ac Write-Assist for Low Read Disturb
Application: 15/859,047 →
Switching and Stability Control for Perpendicular Magnetic Tunnel Junction Device
Application: 15/859,374 →
Perpendicular Magnetic Tunnel Junction Device with Offset Precessional Spin Current Layer
Application: 15/859,379 →
Perpendicular Magnetic Tunnel Junction Device with Precessional Spin Current Layer Having a Modulated Moment Density
Application: 15/859,381 →
Publication: US 2019/0207088
Perpendicular Magnetic Tunnel Junction Device with Skyrmionic Assist Layers for Free Layer Switching
Application: 15/859,384 →
Publication: US 2019/0206466
Microwave Write-Assist in Orthogonal Stt-Mram
Application: 15/859,514 →
Microwave Write-Assist in Series-Interconnected Orthogonal Stt-Mram Devices
Application: 15/859,517 →
Perpendicular Magnetic Tunnel Junction Device with Skyrmionic Enhancement Layers for the Precessional Spin Current Magnetic Layer
Application: 15/862,788 →
Publication: US 2019/0214548
Precessional Spin Current Structure for MRAM
Application: 16/027,739 →
Publication: US 2018/0315920
Memory Cell Having Magnetic Tunnel Junction and Thermal Stability Enhancement Layer
Application: 16/123,663 →
Publication: US 2019/0006582
Adjustable Stabilizer/Polarizer Method for MRAM with Enhanced Stability and Efficient Switching
Application: 16/192,972 →
Spin Transfer Torque Structure for MRAM Devices Having a Spin Current Injection Capping Layer
Application: 16/197,622 →
Publication: US 2019/0109278
Related Assignments (22)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest Aug 7, 2014
From: PINARBASI, MUSTAFA
To: SPIN TRANSFER TECHNOLOGIES, INC.
Reel/Frame 033488/0201 →
Assignment of Assignor's Interest Oct 3, 2014
From: PINARBASI, MUSTAFA; KARDASZ, BARTEK
To: SPIN TRANSFER TECHNOLOGIES, INC.
Reel/Frame 033888/0498 →
Assignment of Assignor's Interest Sep 10, 2015
From: PINARBASI, MUSTAFA MICHAEL; TZOUFRAS, MICHAIL
To: SPIN TRANSFER TECHNOLOGIES, INC.
Reel/Frame 036535/0976 →
Assignment of Assignor's Interest Sep 25, 2015
From: KARDASZ, BARTLOMIEJ ADAM; PINARBASI, MUSTAFA MICHAEL
To: SPIN TRANSFER TECHNOLOGIES, INC.
Reel/Frame 036661/0882 →
Assignment of Assignor's Interest Feb 11, 2016
From: PINARBASI, MUSTAFA
To: SPIN TRANSFER TECHNOLOGIES, INC.
Reel/Frame 037712/0745 →
Assignment of Assignor's Interest Apr 6, 2016
From: KARDASZ, BARTLOMIEJ ADAM; PINARBASI, MUSTAFA MICHAEL; HERNANDEZ, JACOB ANTHONY
To: SPIN TRANSFER TECHNOLOGIES, INC.
Reel/Frame 038206/0114 →
Assignment of Assignor's Interest Apr 13, 2016
From: PINARBASI, MUSTAFA MICHAEL; HERNANDEZ, JACOB ANTHONY; DATTA, ARINDOM; GAJEK, MARCIN JAN
To: SPIN TRANSFER TECHNOLOGIES, INC.
Reel/Frame 038267/0113 →
Assignment of Assignor's Interest May 18, 2016
From: PINARBASI, MUSTAFA; KARDASZ, BARTEK
To: SPIN TRANSFER TECHNOLOGIES, INC.
Reel/Frame 038635/0055 →
Assignment of Assignor's Interest Feb 28, 2017
From: PINARBASI, MUSTAFA MICHAEL; KARDASZ, BARTLOMIEJ ADAM
To: SPIN TRANSFER TECHNOLOGIES, INC.
Reel/Frame 041402/0487 →
Assignment of Assignor's Interest Feb 28, 2017
From: PINARBASI, MUSTAFA MICHAEL; KARDASZ, BARTLOMIEJ ADAM
To: SPIN TRANSFER TECHNOLOGIES, INC.
Reel/Frame 041401/0881 →
Security Interest Jun 16, 2017
From: SPIN TRANSFER TECHNOLOGIES, INC.
To: SILICON VALLEY BANK
Reel/Frame 042981/0819 →
Assignment of Assignor's Interest Jun 27, 2017
From: SCHABES, MANFRED ERNST; KARDASZ, BARTLOMIEJ ADAM; PINARBASI, MUSTAFA
To: SPIN TRANSFER TECHNOLOGIES, INC.
Reel/Frame 042829/0320 →
Assignment of Assignor's Interest Jul 21, 2017
From: PINARBASI, MUSTAFA; KARDASZ, BARTEK
To: SPIN TRANSFER TECHNOLOGIES, INC.
Reel/Frame 043065/0347 →
Assignment of Assignor's Interest Jul 24, 2017
From: KARDASZ, BARTLOMIEJ ADAM; PINARBASI, MUSTAFA MICHAEL
To: SPIN TRANSFER TECHNOLOGIES, INC.
Reel/Frame 043075/0511 →
Assignment of Assignor's Interest Aug 11, 2017
From: PINARBASI, MUSTAFA MICHAEL; HERNANDEZ, JACOB ANTHONY; DATTA, ARINDOM; GAJEK, MARCIN JAN
To: SPIN TRANSFER TECHNOLOGIES, INC.
Reel/Frame 043266/0001 →
Assignment of Assignor's Interest Oct 20, 2017
From: KARDASZ, BARTLOMIEJ ADAM
To: SPIN TRANSFER TECHNOLOGIES, INC.
Reel/Frame 043915/0198 →
Assignment of Assignor's Interest Oct 26, 2017
From: PINARBASI, MUSTAFA MICHAEL; TZOUFRAS, MICHAIL; KARDASZ, BARTLOMIEJ ADAM
To: SPIN TRANSFER TECHNOLOGIES, INC.
Reel/Frame 043962/0133 →
Assignment of Assignor's Interest Apr 4, 2018
From: GAJEK, MARCIN JAN; TZOUFRAS, MICHAIL; BOZDAG, KADRIYE DENIZ; RYAN, ERIC MICHAEL
To: SPIN TRANSFER TECHNOLOGIES, INC.
Reel/Frame 045438/0868 →
Assignment of Assignor's Interest Apr 6, 2018
From: TZOUFRAS, MICHAIL; GAJEK, MARCIN JAN; BOZDAG, KADRIYE DENIZ; BARAJI, MOURAD EL
To: SPIN TRANSFER TECHNOLOGIES, INC.
Reel/Frame 045461/0434 →
Assignment of Assignor's Interest Jul 20, 2021
From: SPIN MEMORY, INC.
To: SPIN (ASSIGNMENT FOR THE BENEFIT OF CREDITORS), LLC
Reel/Frame 056927/0038 →
Assignment of Assignor's Interest Sep 7, 2021
From: SPIN (ASSIGNMENT FOR BENEFIT OF CREDITORS), LLC
To: INTEGRATED SILICON SOLUTION, (CAYMAN) INC.
Reel/Frame 057436/0237 →
Assignment of Assignor's Interest Sep 11, 2021
From: SPIN (ASSIGNMENT FOR BENEFIT OF CREDITORS), LLC
To: INTEGRATED SILICON SOLUTION, (CAYMAN) INC.
Reel/Frame 057473/0319 →