Image sensor chip scale packages and related methods
Methods of forming an image sensor chip scale package. Implementations may include providing a semiconductor wafer having a pixel array, forming a first cavity through the wafer and/or one or more layers coupled over the wafer, filling the first cavity with a fill material, planarizing the fill material and/or the one or more layers to form a first surface of the fill material coplanar with a first surface of the one or more layers, and bonding a transparent cover over the fill material and the one or more layers. The bond may be a fusion bond between the transparent cover and a passivation oxide; a fusion bond between the transparent cover and an anti-reflective coating; a bond between the transparent cover and an organic adhesive coupled over the fill material, and/or; a bond between a first metallized surface of the transparent cover and a metallized layer coupled over the wafer.
1. An image sensor chip scale package (CSP) comprising:
a die comprising one or more layers thereon and an array of pixels; and
a cavity through one of the die or the one or more layers, the cavity comprising a planarized fill material that is substantially coplanar with a first surface of the one or more layers;
wherein the cavity is configured to comprise an entire width of a conductive pad.
2. The image sensor CSP of claim 1 , further comprising a transparent cover bonded over the planarized fill material and over the one or more layers.
3. The image sensor CSP of claim 2 , wherein the transparent cover is bonded using one of:
a fusion bond between the transparent cover and a passivation oxide; or
a fusion bond between the transparent cover and an anti-reflective coating.
4. The image sensor CSP of claim 3 , wherein the anti-reflective coating (ARC) is coupled over an organic layer.
5. The image sensor CSP of claim 2 , wherein the transparent cover comprises one of a cavity or a lens.
6. The image sensor CSP of claim 1 , wherein the planarized fill material is planarized using chemical mechanical polishing (CMP).
7. The image sensor CSP of claim 1 , wherein the fill material comprises an oxide.
8. The image sensor CSP of claim 1 , further comprising a plurality of stacked die.
9. The image sensor CSP of claim 1 , further comprising a second cavity comprised through one of the die or the one or more layers and the second cavity is filled with one of the fill material or a second fill material.
10. The image sensor CSP of claim 1 , wherein a first surface of the fill material is coplanar with a plane that intersects a color filter array (CFA) of the image sensor CSP.
11. An image sensor chip scale package (CSP) comprising:
a die comprising an array of pixels;
a first cavity through one of the die or one or more layers coupled over the die; the first cavity comprising a fill material;
one of the fill material or the one or more layers planarized to form a first surface of the fill material coplanar with a first surface of the one or more layers; and
a transparent cover fusion_bonded over the fill material and over the one or more layers.
12. The image sensor CSP of claim 11 , wherein the planarized first surface is planarized using chemical mechanical polishing (CMP).
13. The image sensor CSP of claim 11 , further comprising a second cavity comprised through one of the die and the one or more layers, the second cavity filled with one of the fill material or a second fill material, and one of the fill material or the second fill material planarized to form a second surface coplanar with the first surface of the one or more layers, the second surface directly over the second cavity.
14. The image sensor CSP of claim 11 , further comprising one or more openings comprised in a layer defining the first cavity to test one or more electrical functions of the image sensor CSP.
15. An image sensor chip scale package (CSP) comprising:
a die comprising an array of pixels;
a first cavity through one of the die or one or more layers coupled over the the first cavity comprising a fill material;
one of the fill material or the one or more layers planarized to form a first surface of the fill material coplanar with a first surface of the one or more layers; and
a first metallized surface of a transparent cover bonded with a metallized layer coupled over the die, the transparent cover bonded over the fill material and over the one or more layers.
16. The image sensor CSP of claim 15 , wherein no adhesive is used to bond the transparent cover over the fill material and over the one or more layers.
17. The image sensor CSP of claim 15 , wherein the first metallized surface comprises oxide in particular locations that correspond with particular locations of oxide comprised in the metallized layer.
18. The image sensor CSP of claim 15 , further comprising a second cavity through one of the die or the one or more layers, the second cavity filled with one of the fill material or a second fill material, one of the fill material or the second fill material planarized to form a second surface coplanar with the first surface of the fill material, and the transparent cover bonded over a full diameter of the first cavity and over at least a portion of a diameter of the second cavity.
19. The image sensor CSP of claim 15 , further comprising one of a cavity or a global lens in the transparent cover.
20. The image sensor CSP of claim 15 , further comprising at least a portion of a testing contact comprised within the first cavity, the testing contact configured to test one or more electrical functions of the image sensor CSP.