Methods of forming a channel region of a transistor and methods used in forming a memory array
A transistor comprises channel material having first and second opposing sides. A gate is on the first side of the channel material and a gate insulator is between the gate and the channel material. A first insulating material has first and second opposing sides, with the first side being adjacent the second side of the channel material. A second insulating material of different composition from that of the first insulating material is adjacent the second side of the first insulating material. The second insulating material has at least one of (a), (b), and (c), where, (a): lower oxygen diffusivity than the first material, (b): net positive charge, and (c): at least two times greater shear strength than the first material. In some embodiments, an array of elevationally-extending strings of memory cells comprises such transistors. Other embodiments, including method, are disclosed.
1. A method of forming a channel region of a transistor, comprising:
forming amorphous channel material over a substrate, the amorphous channel material having first and second opposing sides;
forming an insulator material adjacent the second side of the amorphous channel material below a crystallization temperature at and above which the amorphous channel material would become crystalline; and
subjecting the amorphous channel material having the insulator material there-adjacent to a temperature at or above the crystallization temperature to transform the amorphous channel material into crystalline channel material; and
the insulator material being formed directly against the second side of the amorphous channel material.
2. A method of forming a channel region of a transistor, comprising:
forming amorphous channel material over a substrate, the amorphous channel material having first and second opposing sides;
forming a first insulating material adjacent the second side of the amorphous channel material below a crystallization temperature at and above which the amorphous channel material would become crystalline, the first insulating material having first and second opposing sides, the first side of the first insulating material being adjacent the second side of the amorphous channel material;
forming a second insulating material of different composition from that of the first insulating material adjacent the second side of the first insulating material;
subjecting the amorphous channel material having the first insulating material there-adjacent to a temperature at or above the crystallization temperature to transform the amorphous channel material into crystalline channel material; and
forming all of the second insulating material before the transforming of the amorphous channel material into the crystalline channel material.
3. A method of forming a channel region of a transistor, comprising:
forming amorphous channel material over a substrate, the amorphous channel material having first and second opposing sides;
forming a first insulating material adjacent the second side of the amorphous channel material below a crystallization temperature at and above which the amorphous channel material would become crystalline, the first insulating material having first and second opposing sides, the first side of the first insulating material being adjacent the second side of the amorphous channel material;
forming a second insulating material of different composition from that of the first insulating material adjacent the second side of the first insulating material;
subjecting the amorphous channel material having the first insulating material there-adjacent to a temperature at or above the crystallization temperature to transform the amorphous channel material into crystalline channel material; and
forming at least some of the second insulating material during the transforming of the amorphous channel material into the crystalline channel material.
4. A method of forming a channel region of a transistor, comprising:
forming amorphous channel material over a substrate, the amorphous channel material having first and second opposing sides;
forming a first insulating material adjacent the second side of the amorphous channel material below a crystallization temperature at and above which the amorphous channel material would become crystalline, the first insulating material having first and second opposing sides, the first side of the first insulating material being adjacent the second side of the amorphous channel material;
forming a second insulating material of different composition from that of the first insulating material adjacent the second side of the first insulating material;
subjecting the amorphous channel material having the first insulating material there-adjacent to a temperature at or above the crystallization temperature to transform the amorphous channel material into crystalline channel material; and
forming the first side of the first insulating material directly against the second side of the amorphous channel material below the crystallization temperature.
5. The method of claim 4 wherein the amorphous channel material comprises elemental-form silicon and the first insulating material comprises SiO 2 , an interface of the elemental-form silicon and the SiO 2 having density of interface traps of 10 9 to 10 13 traps/cm 2 per eV before and after crystallization.
6. The method of claim 5 wherein the interface has density of interface traps of 10 9 to 10 11 traps/cm 2 per eV before and after crystallization.