Method of quasi-atomic layer etching of silicon nitride
A method of etching is described. The method includes providing a substrate having a first material containing silicon nitride and a second material that is different from the first material, forming a first chemical mixture by plasma-excitation of a first process gas containing H and optionally a noble gas, and exposing the first material on the substrate to the first chemical mixture. Thereafter, the method includes forming a second chemical mixture by plasma-excitation of a second process gas containing S and F, and optionally a noble element, and exposing the first material on the substrate to the second plasma-excited process gas to selectively etch the first material relative to the second material.
1. A method of etching, comprising:
providing a substrate having a first material containing silicon nitride and a second material that is different from the first material with the second material provided along first and second side walls of the first material such that the first material is between the second material on the first and second side walls and the first material fills a region between the second material on the first and second side walls;
forming a first chemical mixture by plasma-excitation of a first process gas containing H and optionally a noble gas;
exposing the first material on the substrate to the first chemical mixture to hydrogenate a surface and subsurface regions of the first material, the subsurface regions including a first portion and a second portion below the first portion, and after the exposing first material to the first chemical mixture the first portion has a hydrogen concentration greater than that at the surface and the second portion has a hydrogen concentration lower than that at the surface;
thereafter, forming a second chemical mixture by plasma-excitation of a second process gas containing S and F, and optionally a noble element;
exposing the first material on the substrate to the second plasma-excited process gas to selectively etch the first material relative to the second material; and
repeating the exposing the first material to the first chemical mixture and the exposing the first material to the second plasma-excited process gas to remove the first material between the second material until a layer positioned under the first material is exposed, and after the layer positioned under the first material is exposed, the second material remains on the substrate.
2. The method of claim 1 , wherein the first process gas contains H 2 .
3. The method of claim 1 , wherein the first process gas consists of H 2 .
4. The method of claim 1 , wherein the first process gas consists of H 2 and Ar.
5. The method of claim 1 , wherein the second process gas contains SF 6 and Ar.
6. The method of claim 1 , wherein the second process gas consists of SF 6 and Ar.
7. The method of claim 1 , wherein the first chemical mixture contains hydrogen ions.
8. The method of claim 1 , wherein the second chemical mixture contains substantially charge-neutral species.
9. The method of claim 1 , wherein the second material is selected from the group consisting of SiO 2 and organic materials.
10. The method of claim 1 , wherein the plasma excitation of the first process gas or the second process gas includes generating plasma using a capacitively coupled plasma source containing an upper plate electrode, and a lower plate electrode supporting the substrate.
11. The method of claim 1 , wherein the plasma excitation of the first process gas or the second process gas includes generating plasma using an inductively coupled plasma source containing an inductive element, and a lower plate electrode supporting the substrate.
12. The method of claim 1 , wherein the plasma excitation of the first process gas or the second process gas includes generating plasma using a remote plasma source that creates a high radical to ion flux ratio.
13. The method of claim 1 , wherein the first material is removed at an etch selectivity of greater than 100-to-1 relative to the second material.
14. The method of claim 1 , wherein the first material is a mandrel in a self-aligned multi-patterning (SAMP) process.
15. The method according to claim 1 , further including:
performing the exposing the first material to the first chemical mixture in a processing chamber at a first pressure, performing the exposing the first material to the second plasma-excited process gas in the processing chamber at a second pressure, and the second pressure is greater than the first pressure; and
wherein the first process gas consists essentially of hydrogen and optionally a noble gas.
16. The method according to claim 15 ,
wherein during the exposing the first material to the first chemical mixture, a flow of fluorine containing gas to the processing chamber is turned off.
17. A method of etching, comprising:
providing a substrate having a first material containing silicon nitride and a second material that is different from the first material with the second material provided along first and second side walls of the first material such that the first material is between the second material on the first and second side walls and the first material fills a region between the second material on the first and second side walls;
forming a first chemical mixture by plasma-excitation of a first process gas containing H and optionally a noble gas;
exposing the first material on the substrate to the first chemical mixture to hydrogenate a surface and subsurface regions of the first material, the subsurface regions including a first portion and a second portion below the first portion, and after the exposing first material to the first chemical mixture the first portion has a hydrogen concentration greater than that at the surface and the second portion has a hydrogen concentration lower than that at the surface;
thereafter, forming a second chemical mixture by plasma-excitation of a second process gas containing a high fluorine content molecule, and optionally a noble element, wherein the ratio of fluorine to other atomic elements of the high fluorine content molecule exceeds unity;
exposing the first material on the substrate to the second plasma-excited process gas to selectively etch the first material relative to the second material; and
repeating the exposing the first material to the first chemical mixture and the exposing the first material to the second plasma-excited process gas to remove the first material between the second material until a layer positioned under the first material is exposed, and after the layer positioned under the first material is exposed, the second material remains on the substrate.
18. The method according to claim 17 , further including:
performing the exposing the first material to the first chemical mixture in a processing chamber at a first pressure, performing the exposing the first material to the second plasma-excited process gas in the processing chamber at a second pressure, and the second pressure is greater than the first pressure; and
wherein the first process gas consists essentially of hydrogen and optionally a noble gas.
19. The method according to claim 18 ,
wherein during the exposing the first material to the first chemical mixture, a flow of fluorine containing gas to the processing chamber is turned off.