IP Library Granted Patent US 10,818,575
Granted Patent B2
US 10,818,575 · App. 15/906,925 · Granted Oct 27, 2020

Datacenter 3D solid state drives with matrix cooling

Inventors: Chin-Tien Chiu (Taichung, TW); Zhongli Ji (Shanghai, CN); Hem Takiar (Fremont, CA)
Assignee: SanDisk Information Technology (Shanghai) Co., Ltd.
H01L23/46H01L23/467H01L25/0652H01L25/0657H01L23/367H01L2224/24145H01L2224/32145H01L2225/06517H01L2225/06524H01L2225/06565H01L2225/06586H01L2225/06589H01L2924/1436H01L2924/1438H01L2924/15311
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Quick Facts
Patent No.
US 10,818,575
App. No.
15/906,925
Granted
Oct 27, 2020
Kind
B2
Abstract

A solid state drive is disclosed including a planar array of semiconductor devices for use in a datacenter, and a system for cooling the planar array of semiconductor devices. The semiconductor devices may be arranged in a grid pattern, spaced apart from each other so as to define rows and columns of flow pathways, or cooling tunnels, around and between the semiconductor devices.

Claims (41)

1. A solid state drive, comprising:

a substrate comprising a plurality of contact pads;

a plurality of semiconductor devices coupled to the substrate and arrayed in at least one of spaced apart rows or columns of semiconductor devices;

a plurality of electrically conductive bumps on surfaces of the plurality of semiconductor devices, the plurality of electrically conductive bumps coupled to the plurality of contact pads;

a plurality of cooling tunnels being defined by the at least one of spaced apart rows or columns of semiconductor devices, the plurality of cooling tunnels configured to receive a cooling fluid flowing through the cooling tunnels to carry heat away from the plurality of semiconductor devices, and a cooling tunnel of the plurality of cooling tunnels configured to vent the cooling fluid in an unconstrained egress to an environment surrounding the solid state drive.

2. The solid state drive of claim 1 , wherein the plurality of semiconductor devices are electrically coupled to the substrate.

3. The solid state drive of claim 1 , wherein the plurality of semiconductor devices are physically coupled to the substrate.

4. The solid state drive of claim 1 , wherein the substrate is pliable to couple with variable heights of the surfaces of the plurality of semiconductor devices.

5. The solid state drive of claim 1 , further comprising a cover affixed to surfaces of the plurality of semiconductor devices opposite to surfaces coupled to the substrate.

6. The solid state drive of claim 5 , wherein the cooling tunnel of the plurality of cooling tunnels is bounded by the substrate, the cover and a pair of adjacent rows or columns of semiconductor devices.

7. The solid state drive of claim 1 , wherein the plurality of cooling tunnels comprise first and second ends open to the environment surrounding the solid state drive, the solid state drive further comprising one or more fluid tubes extending through an exterior surface of the solid state drive into communication with the cooling tunnel between the first and second ends.

8. The solid state drive of claim 1 , wherein the plurality of semiconductor devices each comprise a 3-D cube having a plurality of stacked semiconductor die.

9. A solid state drive, comprising:

a substrate;

a plurality of semiconductor devices having first sides coupled to the substrate, and second sides opposed to the first sides;

a cover having a first surface facing an exterior of the solid state drive and exposed to an environment external to the solid state drive, and a second surface, opposite the first surface, directly affixed to the second sides of the plurality of semiconductor devices; and

a plurality of cooling tunnels extending from a first edge of the solid state drive to a second edge of the solid state drive, a cooling tunnel of the plurality of cooling tunnels being defined by the substrate, cover, a first group of the plurality of semiconductor devices and a second group of the plurality of semiconductor devices, the plurality of cooling tunnels configured to receive a cooling fluid to remove heat from the plurality of semiconductor devices.

10. The solid state drive of claim 9 , wherein the first and second groups of semiconductor devices form a pair of adjacent rows or columns extending between opposed edges of the solid state drive.

11. The solid state drive of claim 9 the first surfaces, further comprising a plurality of electrically conductive bumps on the first surfaces of the plurality of semiconductor devices, and further comprising a plurality of contact pads on the substrate, the plurality of electrically conductive bumps coupled to the plurality of contact pads.

12. The solid state drive of claim 11 , wherein the substrate is pliable to couple with variable heights of the surfaces of the plurality of semiconductor devices.

13. The solid state drive of claim 9 , further comprising fluid tubes extending through an exterior surface of the solid state drive into communication with the plurality of cooling tunnels.

14. The solid state drive of claim 13 , wherein the fluid tubes are connected to one or more negative pressure sources for drawing fluid out of the solid state drive through the fluid tubes.

15. The solid state drive of claim 14 , wherein the one or more negative pressure sources apply a uniform pressure across the fluid tubes.

16. The solid-state drive of claim 14 , wherein the one or more negative pressure sources comprise at least a first and second pressure source, the first and second pressure sources exerting different pressures on the fluid tubes.

17. The solid-state drive of claim 9 , wherein the cover is directly affixed to the second surfaces of the plurality of semiconductor devices.

18. A solid state drive, comprising:

a substrate;

a cover;

a plurality of semiconductor devices directly affixed to the substrate and directly affixed to the cover, the semiconductor die arrayed in at least one of spaced apart rows and or columns of semiconductor devices;

a plurality of cooling tunnels being defined by the at least one of spaced apart rows and or columns of semiconductor devices, the plurality of cooling tunnels configured to receive a cooling fluid flowing through the cooling tunnels to carry heat away from the plurality of semiconductor devices.

19. The solid state drive of claim 18 , wherein the plurality of semiconductor devices are physically and electrically coupled to the substrate.

20. The solid state drive of claim 18 , further comprising a plurality of electrically conductive bumps on surfaces of the plurality of semiconductor devices, and further comprising a plurality of contact pads on the substrate, the plurality of electrically conductive bumps coupled to the plurality of contact pads.

21. The solid state drive of claim 20 , wherein the substrate is pliable to couple with variable heights of the surfaces of the plurality of semiconductor devices.

22. The solid state drive of claim 18 , wherein a cooling tunnel of the plurality of cooling tunnels is bounded by the substrate, the cover and a pair of adjacent rows or columns of semiconductor devices.

23. The solid state drive of claim 22 , wherein the cooling tunnel of the plurality of cooling tunnels being open to an environment surrounding the solid state drive.

24. The solid state drive of claim 18 , further comprising fluid tubes extending through an exterior surface of the solid state drive into communication with the plurality of cooling tunnels.

25. The solid state drive of claim 18 , wherein the plurality of semiconductor devices each comprise a 3-D cube having a plurality of semiconductor die.

26. A solid state drive, comprising:

a substrate;

a plurality of semiconductor devices coupled to the substrate and arrayed in at least one of spaced apart rows or columns of semiconductor devices, the plurality of semiconductor devices each comprising a 3-D cube having a plurality of stacked semiconductor dies;

a plurality of cooling tunnels being defined by the at least one of spaced apart rows or columns of semiconductor devices, the plurality of cooling tunnels configured to receive a cooling fluid flowing through the cooling tunnels to carry heat away from the plurality of semiconductor devices, and a cooling tunnel of the plurality of cooling tunnels configured to vent the cooling fluid in an unconstrained egress to an environment surrounding the solid state drive.

Assignments (5)
PARTIAL RELEASE OF SECURITY INTERESTS Recorded Apr 25, 2025
From: JPMORGAN CHASE BANK, N.A., AS AGENT
To: SANDISK TECHNOLOGIES, INC.
Reel/Frame 071382/0001 →
SECURITY AGREEMENT Recorded Apr 25, 2025
From: SANDISK TECHNOLOGIES, INC.
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 071050/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 31, 2024
From: SANDISK TECHNOLOGIES LLC
To: SANDISK TECHNOLOGIES, INC.
Reel/Frame 069796/0423 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 10, 2024
From: SANDISK INFORMATION TECHNOLOGY (SHANGHAI) CO. LTD.
To: SANDISK TECHNOLOGIES LLC
Reel/Frame 066087/0523 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 27, 2018
From: CHIU, CHIN-TIEN; JI, ZHONGLI; TAKIAR, HEM
To: SANDISK INFORMATION TECHNOLOGY (SHANGHAI) CO., LTD.
Reel/Frame 045055/0278 →